48SD1616RPFI

48SD1616 256 Mb SDRAM 4-Meg X 16-Bit X 4-Banks Logic Diagram (One Amplifier) Memory FEATURES: • 256 Megabit ( 4-Meg X 16-Bit X 4-Banks) • RAD-PAK® radiation-hardened against natural space radiation • Total Dose Hardness: >100 krad (Si), depending upon space mission • Excellent Single Event Effects: SELTH > 85 MeV/mg/cm2 @ 25° C DESCRIPTION: Maxwell Technologies’ Synchronous Dynamic Random Access Memory (SDRAM) is ideally suited for space applications requiring high performance computing and high density memory storage. As microprocessors increase in speed and demand for higher density memory escalates, SDRAM has proven to be the ultimate solution by providing bit-counts up to 256 Mega Bits and speeds up to 100 Megahertz. SDRAMs represent a significant advantage in memory technology over traditional DRAMs including the ability to burst data synchronously at high rates with automatic column-address generation, the ability to interleave between banks masking precharge time. Maxwell Technologies’ patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding for a lifetime in orbit or space mission. In a typical GEO orbit, RAD-PAK® provides greater than 100 krads(Si) radiation dose tolerance. This product is available with screening up to Maxwell Technologies self-defined Class K. 01.07.05 REV 4 • • • • • • • • • • • JEDEC Standard 3.3V Power Supply Operating Current: 115 mA Clock Frequency: 100 MHz Operation Operating tremperature: -55 to +125 ° C Auto Refresh Single pulsed RAS 2 Burst Sequence variations Sequential (BL =1/2/4/8) Interleave (BL = 1/2/4/8) Programmable CAS latency: 2/3 Power Down and Clock Suspend Modes LVTTL Compatible Inputs and Outputs Package: 72-Pin RAD-PAK® Flat Package All data sheets are subject to change without notice 1 (858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com ©2005 Maxwell Technologies All rights reserved. 256Mb (4-Meg X 16-Bit X 4-Banks) SDRAM Pinout Description 48SD1616 Pin Descriptions Pin Name PKGGND A0 to A12 BA0, BA1 Address Input Row Address A0 to A12 Column Address A0 to A8 Bank Select Address BA0/BA1 (BS) DQ0 to DQ15 CS\ RAS\ CAS\ WE\ DQMU/DQML CLK CKE Vcc Vss VccQ VssQ NC Data-Input/Output Chip Select Row Address Strobe Column Address Strobe Write Enable Input/Output Mask Clock Input Clock Enable Power for internal circuits Ground for internal circuits Power for DQ circuits Ground for DQ circuits No Connection Function Package Ground Memory 01.07.05 REV 4 All data sheets are subject to change without notice 2 ©2005 Maxwell Technologies All rights reserved. 256Mb (4-Meg X 16-Bit X 4-Banks) SDRAM ‘ 48SD1616 TABLE 1. ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage on any pin relative to VSS Supply voltage relative to VSS Short circuit output current Power Dissipation Thermal Resistance Operating Temperature Storage Temperature SYMBOL VIN VOUT VCC IOUT PD Tjc TOPR TSTG MAX -0.5 to VCC + 0.5 (< 4.6(max)) -0.5 to +4.6 50 1.0 1.5 -55 to +125 -65 to +150 UNIT V V mA W °C/W °C °C TABLE 2. RECOMMENDED OPERATING CONDITIONS (VCC = 3.3V + 0.3V, VDDQ = 3.3V + 0.3V, TA = -55 TO 125°C, UNLESS OTHERWISE SPECIFIED) Memory PARAMETER Supply Voltage SYMBOL M IN M AX VCC, VCCQ1,2 3.0 3.6 VSS, VSSQ3 0 0 Input High Voltage VIH1,4 2.0 VCC + 0.3 Input Low Voltage VIL1,5 -0.3 0.8 1. All voltage referred to VSS 2. The supply voltage with all VCC and VCCQ pins must be on the same level 3. The supply voltage with all V SS a nd V SSQ pins must be on the same level 4. 5. VIH ( max) = VCC+2.0V for pulse width