MCC
Micro Commercial Components
TM
omponents 20736 Marilla Street Chatsworth !"# $
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2N4400
Features
• • • • • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Marking:Type number
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Rating Total Device Dissipation Derate above 25OC Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Rating 40 60 6.0 600 -55 to +150 -55 to +150 Max 625 5.0 83.3 200 Unit V V V mA O C O C Unit mW mW/ OC O C/W O C/W
NPN General Purpose Amplifier
TO-92
A E
Maximum Ratings*
Symbol V CEO V CBO V EBO IC TJ TSTG Symbol PD RJ C RJA
B
Thermal Characteristics
C
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units D
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage* 40 --Vdc (IC=1.0mAdc, IB =0) V(BR)CBO Collector-Base Breakdown Voltage 60 --Vdc (IC=100ì Adc, IE =0) V(BR)EBO Emitter-Base Breakdown Voltage 6.0 --Vdc (IE =100ì Adc, IC=0) ICEX Collector Cutoff Current --0.1 uAdc (VCE=35Vdc, VEB =0.4Vdc) IBL Base Cutoff Current --0.1 uAdc (VCE=35Vdc, VEB =0.4Vdc) * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Notes: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. V(BR)CEO
G
E
B
C
DIMENSIONS INCHES MIN .170 .170 .550 .010 .130 .096 MM MAX .190 .190 .590 .020 .160 .104 MIN 4.33 4.30 13.97 0.36 3.30 2.44 MAX 4.83 4.83 14.97 0.56 3.96 2.64 NOTE
DIM A B C D E G
www.mccsemi.com
Revision: A
1 of 6
2011/01/01
2N4400
MCC
Micro Commercial Components
TM
Symbol
Parameter DC Current Gain (V CE=1.0Vdc, IC=1.0mAdc) (V CE=1.0Vdc, IC=10mAdc) (V CE=1.0Vdc, IC=150mAdc) (V CE=2.0Vdc, IC=500mAdc) Collector-Emitter Saturation Voltage (IC=150mAdc, IB =15mAdc) (IC=500mAdc, IB =50mAdc) Base-Emitter Saturation Voltage (IC=150mAdc, IB =15mAdc) (IC=500mAdc, IB =50mAdc) Output Capacitance (V CB=5.0Vdc, f=140KHz) Input Capacitance (V EB=0.5Vdc, f=140KHz) Small-Signal Current Gain (IC=20mAdc, V CE=10Vdc, f=100MHz) Small-Signal Current Gain (IC=1.0mAdc, V CE=10Vdc, f=1.0KHz) Small-Signal Current Gain (IC=1.0mAdc, V CE=10Vdc, f=1.0KHz) Small-Signal Current Gain (IC=1.0mAdc, V CE=10Vdc, f=1.0KHz) Small-Signal Current Gain (IC=1.0mAdc, V CE=10Vdc, f=1.0KHz) Delay Time Rise Time Storage Time Fall Time VCC=30Vdc, IC=150mAdc, IB1=15mAdc, V BE(off) =2.0Vdc VCC=30Vdc, IC=150mAdc, IB1=IB2=15mAdc
Min
Max
Units
ON CHARACTERISTICS
hFE 40 40 50 20 ----0.75
--150
VCE(sat)
0.40 0.75 0.95 1.20
Vdc Vdc Vdc Vdc
VBE(sat)
SMALL-SIGNAL CHARACTERISTICS
COB CIB hfe hfe hie hre hoe ----2.0 150 0.5 0.10 1.0 --------6.5 30 --200 7.5 8.0 30 15 20 225 30 pF pF ----KOHM X 10-4 umhos ns ns ns ns
SWITCHING CHARACTERISTICS
Td tr ts tf
* Pulse Test: Pulse Width
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