2N4403

MCC Features • •
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2N4403 Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View PNP General Purpose Amplifier TO-92 A E C B E Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (I C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10µ Adc, IE=0) Emitter-Base Breakdown Voltage (I E=10µ Adc, IC=0) Base Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) Collector Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) DC Current Gain* (I C=0.1mAdc, VCE=1.0Vdc) (I C=1.0mAdc, VCE=1.0Vdc) (I C=10mAdc, VCE=1.0Vdc) (I C=150mAdc, VCE=2.0Vdc) (I C=500mAdc, VCE=2.0Vdc) Collector-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Current Gain-Bandwidth Product (I C=20mAdc, VCE=10Vdc, f=100MHz) Output Capacitance (VCB=10Vdc, IE=0, f=140kHz) Input Capacitance (VEB=0.5Vdc, IC=0, f=140kHz) Delay Time (VCC=3.0Vdc, VBE=2.0Vdc Rise Time IC=150mAdc, IB1=15mAdc) Storage Time (VCC=3.0Vdc, IC=150mAdc Fall Time IB1=IB2=15mAdc) ≤ 300µ s, Duty Cycle ≤ 2.0% Min 40 40 5.0 0.1 0.1 Max Units Vdc Vdc Vdc µ Adc µ Adc OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX B ON CHARACTERISTICS hFE 30 60 100 100 20 C 300 VCE(sat) 0.4 0.75 0.75 0.95 1.30 Vdc D VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS fT Ccb Ceb 200 8.5 30.0 15 20 225 30 MHz pF DIMENSIONS G pF ns ns ns ns DIM A B C D E G SWITCHING CHARACTERISTICS td tr ts tf *Pulse Width INCHES MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com 2N4403 DC Current Gain vs Collector Current 300 VCE = 10V 250 200 hFE 150 100 50 VBE(ON) - (V) 0.6 0.4 T = 100°C A 0.2 0 0.1 1.2 1.0 0.8 TA = 25°C MCC Base-Emitter ON Voltage vs Collector Current VCE = 5.0V 0.1 1 IC (mA) 10 100 1.0 IC - (mA) 10 100 Pulsed Base Saturation Volatge vs Collector Current -1.5 IC/IB = 10 -1.3 -1.1 VBE(SAT) - (V) -0.9 VCE(SAT) - (V) -.1 -.5 Pulsed Collector Saturation Voltage vs Collector Current IC/IB = 10 -0.7 -.05 -0.5 0 -1.0 -.02 -1.0 -10 -100 IC - (mA) -1000 -10 IC - (mA) -100 -1000 Collector Reverse Current vs Reverse Bias Voltage 100 0 TA = 25°C 100 ICES - (µ A) 10 pF Input and Output Capacitances vs Reverse Bias Voltage 20 TA = 25°C 16 CIBO 12 8 4 1.0 0 -10 -20 -30 VCE - (V) -40 -50 -60 0 -0.1 COBO -1.0 Volts - (V) -10 www.mccsemi.com 2N4403 Maximum Power Dissipation vs Ambient Temperature 800 1000 MCC Turn On and Turn Off Times vs Collector Current 600 TO-92 100 T - (ns) ton 10 200 SOT-23 0 0 50 100 TA - (°C) Contours of Constant Gain Bandwidth Product (fT) 1000 -10 -8 100 IB1 = IB2 = IC/10 150 200 1.0 10 IB1 = IB2 = IC/10 VCC(OFF) = 15V 100 IC - (mA) Switching Times vs Collector Current 1000 toff PD(MAX) - (mW) 400 VCE - (V) -4 -1.0 -.8 -.4 0 -0.1 T - (ns) ts tf tr td 10 100 IC - (mA) 1000 10 1.0 -1.0 -10 IC - (mA) *25MHz increments from 50 to 200MHz -100 www.mccsemi.com