2N5323

MCC Micro Commercial Components TM
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N5323 Features • • • 10 Watts Power Dissipation. Metal can case. Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) PNP Silicon Switching Transistor TO-39 Maximum Ratings Symbol VCEO VCBO VEBO IC IB TJ TSTG Symbol PD RJC Symbol Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Base Current Operating Junction Temperature Storage Temperature Rating Total Device Dissipation O Derate above 25 C Thermal Resistance, Junction to Case Parameter Collector-Emitter Breakdown Voltage (IC=100mAdc, IB=0) Collector Cutoff Current (VCE=75Vdc, VEB(off)=1.5Vdc) (VCE=45Vdc, VEB(off)=1.5Vdc, TC=150OC) Emitter Cutoff Current (VEB=5.0Vdc, IC=0) DC Current Gain (VCE=4.0Vdc, IC=500mAdc) Collector-Emitter Saturation Voltage (1) (IC=500mAdc, IB=50mAdc) Base-Emitter On Voltage (IC=500mAdc, VCE=4.0Vdc) Small-signal current gain (VCE=4.0Vdc, IC=50mAdc,f=10MHz) Turn-On Time (VCC=30Vdc, IC=500mAdc,IB1=50mAdc) Turn-Off Time (VCC=30Vdc, IC=500mAdc,IB1=IB2=50mAdc) (1) Rating 50 75 5.0 2.0 1.0 -55 to +150 -55 to +150 Max 10 0.057 17.5 Min Max Unit V V V A A O C O C Unit W O mW/ C O C/W Units Thermal Characteristics Electrical Characteristics @ 25OC Unless Otherwise Specified OFF CHARACTERISTICS V(BR)CEO ICEX 50 --------0.1 5.0 0.1 Vdc mAdc IEBO mAdc ON CHARACTERISTICS hFE VCE(sat) VBE(on) 40 ----- 250 1.2 1.4 --Vdc Vdc DIM A B C D E F G H J K L DIMENSIONS INCHES MM MIN MAX MIN .335 .370 8.509 .305 .335 7.747 .240 .260 6.096 .50 .75 12.7 .200 5.08 .029 .045 7.366 ----.050 ----.009 .031 0.229 44° 46° 44° .028 .034 0.711 .016 .021 0.406 SMALL-SIGNAL CHARACTERISTICS hfe 5.0 ----- SWITCHING CHARACTERISTICS ton toff ----100 1000 ns ns MAX 9.40 8.509 6.604 19.05 11.43 1.27 7.874 46° 0.864 0.533 NOTE - -7