2SA1952-TP

2SA1952 Features • Low Collector Saturation Voltage • Suitable for Middle Power Driver • Halogen Free Available Upon Request By Adding Suffix "-HF" • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) PNP Plastic-Encapsulate Transistors Maximum Ratings @ 25°C Unless Otherwise Specified • Operating Junction Temperature Range: -55℃ to +150℃ • Storage Temperature Range: -55℃ to +150℃ • Thermal Resistance: 125℃/W Junction to Ambient Parameter DPAK(TO-252) Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -60 V VEBO -5 V Continuous Collector Current IC -5 A Power Dissipation PD 1 W Emitter-Base Voltage J H 1 C O 4 2 I F E 3 V K M Q A G L D B Marking: A1952 Internal Structure DIM 2,4 1 3 Rev.3-2-12012020 A B C D E F G H I J K L M O Q V 1.BASE 2,4.COLLECTOR 3.EMITTER 1/4 DIMENSIONS INCHES MM MIN MAX MIN MAX 0.087 0.094 2.20 2.40 0.000 0.005 0.00 0.13 0.026 0.034 0.66 0.86 0.018 0.023 0.46 0.58 0.256 0.264 6.50 6.70 0.201 0.215 5.10 5.46 0.190 4.83 0.236 0.244 6.00 6.20 0.086 0.094 2.18 2.39 0.386 0.409 9.80 10.40 0.114 2.90 0.055 0.067 1.40 1.70 0.063 1.60 0.043 0.051 1.10 1.30 0.000 0.012 0.00 0.30 0.211 5.35 NOTE TYP. TYP. TYP. TYP. MCCSEMI.COM 2SA1952 Electrical Characteristics @ TA=25°C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V(BR)CBO -100 V IC=-50µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 V IC=-1mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-50µA, IC=0 Collector Cutoff Current ICBO -10 µA VCB=-100V, IE=0 Emitter Cutoff Current IEBO -10 µA VEB=-5V, IC=0 DC Current Gain hFE(1) 120 hFE(2) 40 Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) VCE=-2V, IC=-1A 270 VCE=-2V, IC=-3A -0.3 V IC=-3A, IB=-150mA -0.5 V IC=-4A, IB=-200mA -1.2 V IC=-3A, IB=-150mA -1.5 V IC=-4A, IB=-200mA fT 80 MHz Collector Output Capacitance Cob 130 pF Turn-on Time ton 0.3 µs Storage Time ts 1.5 µs Fall Time tf 0.3 µs Transition Frequency Rev.3-2-12012020 2/4 VCE=-10V, IC=-500mA, f=30MHz VCB=-10V, IE=0,f=1MHz VCC=-30V, IC=-3A, IB1=IB2=-150mA MCCSEMI.COM 2SA1952 Curve Characteristics Fig. 2 - DC Current Gain Characteristics Fig. 1 - Static Characteristics -4 1000 Common Emitter TA=25°C -18mA -3 TA=100°C -16mA DC Current Gain Collector Current (A) Common Emitter VCE= - 2V -20mA -14mA -12mA -2 -10mA -8mA TA=25°C 100 -6mA -1 -4mA IB=-2mA -0 -0 -1 -2 -3 -4 -5 10 -10 -6 -100 -1200 Base-Emitter Saturation Voltage (mV) Collector-Emitter Saturation Voltage (mV) -5000 Fig. 4 - Base-Emitter Saturation Voltage Characteristics Fig. 3 - Collector-Emitter Saturation Voltage Characteristics -300 -250 -1000 -200 -150 -100 TA=100°C -50 TA=25°C TA=25°C -800 -600 TA=100°C -400 β=20 -0 -100 -1000 β=20 -200 -100 -5000 -1000 Fig. 6 - Collector Power Derating Curve Fig. 5 - Base-Emitter Voltage Characteristics 1.2 -5000 Collector Power Dissipation (W) Common Emitter VCE= - 2V -1000 TA=100°C TA=25°C -100 -10 -0.0 1.0 0.8 0.6 0.4 0.2 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 0 25 50 75 100 125 150 Ambient Temperature (°C) Base-Emitter Voltage (V) Rev.3-2-12012020 -5000 Collector Current (mA) Collector Current (mA) Collcetor Current (mA) -1000 Collector Current (mA) Collector-Emitter Voltage (V) 3/4 MCCSEMI.COM 2SA1952 Ordering Information Device Packing Part Number-TP Tape&Reel: 2.5Kpcs/Reel Note : Adding "-HF" Suffix for Halogen Free, eg. 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MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Rev.3-2-12012020 4/4 MCCSEMI.COM