BC548C

MCC Features l Through Hole Package l 150oC Junction Temperature Pin Configuration Bottom View
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BC546,B BC547,A,B,C BC548,A,B,C NPN Silicon Amplifier Transistor 625mW C B E Mechanical Data l Case: TO-92, Molded Plastic l Polarity: indicated as above. A TO-92 E B Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Collector-Emitter Voltage Collector-Base Voltage BC546 BC547 BC548 BC546 BC547 BC548 Symbol Value 65 VCEO 45 30 80 VCBO 50 30 VEBO 6.0 IC Pd Pd RqJA Unit V V V mA mW mW/oC W mW/oC o D C Emitter-Base Voltage Collector Current(DC) Power Dissipation@TA=25oC Power Dissipation@TC=25oC Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Case Operating & Storage Temperature 100 625 5.0 1.5 12 200 83.3 G DIMENSIONS C/W C/W o DIM A B C D E G RqJC o Tj, TSTG -55~150 C INCHES MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com BC546 thru BC548C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min MCC Typ Max Unit BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC547 BC548 V(BR)CEO 65 45 30 80 50 30 6.0 6.0 6.0 — — — — — — — — — — — — — — — — — — V OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) Collector–Base Breakdown Voltage (IC = 100 µAdc) Emitter–Base Breakdown Voltage (IE = 10 mA, IC = 0) V(BR)CBO V V(BR)EBO V ON CHARACTERISTICS DC Current Gain (IC = 10 µA, VCE = 5.0 V) hFE BC547A/548A BC546B/547B/548B BC548C BC546 BC547 BC548 BC547A/548A BC546B/547B/548B BC547C/BC548C BC547A/548A BC546B/547B/548B BC548C VCE(sat) — VBE(sat) VBE(on) 0.55 — — — 0.7 0.77 — — — — 110 110 110 110 200 420 — — — 90 150 270 — — — 180 290 520 120 180 300 --— — — — 450 800 800 220 450 800 — — — V 0.3 1.0 V V — (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base–Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT BC546 BC547 BC548 Cobo Cibo hfe BC546 BC547/548 BC547A/548A BC546B/547B/548B BC547C/548C NF BC546 BC547 BC548 — — — 2.0 2.0 2.0 10 10 10 125 125 125 240 450 — — 220 330 600 500 900 260 500 900 dB 150 150 150 — — 300 300 300 1.7 10 — — — 4.5 — pF pF — MHz Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW, f = 1.0 kHz, ∆f = 200 Hz) www.mccsemi.com BC546 thru BC548C 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 VCE = 10 V TA = 25°C V, VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.5 50 1.0 20 2.0 5.0 10 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 TA = 25°C VBE(sat) @ IC/IB = 10 MCC VBE(on) @ VCE = 10 V VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 Figure 1. Normalized DC Current Gain 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 0.8 0.4 0 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 1.0 Figure 2. “Saturation” and “On” Voltages VCE , COLLECTOR-EMITTER VOLTAGE (V) θVB, TEMPERATURE COEFFICIENT (mV/ °C) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.02 0.1 1.0 IB, BASE CURRENT (mA) 10 20 0.2 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 3. Collector Saturation Region Figure 4. Base–Emitter Temperature Coefficient BC547/BC548 10 7.0 C, CAPACITANCE (pF) 5.0 3.0 Cob 2.0 Cib TA = 25°C f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product www.mccsemi.com BC546 thru BC548C BC547/BC548 1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5 V TA = 25°C 2.0 1.0 0.5 0.2 0.1 0.2 10 100 1.0 IC, COLLECTOR CURRENT (mA) V, VOLTAGE (VOLTS) TA = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 VBE @ VCE = 5.0 V MCC 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200 Figure 7. DC Current Gain 2.0 TA = 25°C 1.6 20 mA 1.2 0.8 0.4 0 IC = 10 mA 50 mA 100 mA 200 mA -1.0 -1.4 -1.8 -2.2 -2.6 -3.0 Figure 8. “On” Voltage VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) θVB, TEMPERATURE COEFFICIENT (mV/ °C) θVB for VBE -55°C to 125°C 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 0.2 0.5 10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA) 50 100 200 Figure 9. Collector Saturation Region Figure 10. Base–Emitter Temperature Coefficient BC546 TA = 25°C C, CAPACITANCE (pF) 20 Cib f T, CURRENT-GAIN - BANDWIDTH PRODUCT 40 VCE = 5 V TA = 25°C 500 200 100 50 20 10 6.0 4.0 Cob 2.0 0.1 0.2 0.5 5.0 1.0 2.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product www.mccsemi.com