BC557A

MCC Features l Through Hole Package l 150oC Junction Temperature Pin Configuration Bottom View
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BC556,B BC557,A,B,C BC558,B PNP Silicon Amplifier Transistor 625mW C B E Mechanical Data l Case: TO-92, Molded Plastic l Polarity: indicated as above. A TO-92 E B Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Collector-Emitter Voltage Symbol Value -65 VCEO -45 -30 -80 VCBO -50 -30 VEBO -5.0 IC Pd Pd RqJA Unit V C Collector-Base Voltage BC556 BC557 BC558 BC556 BC557 BC558 V V mA mW mW/oC W mW/oC o D Emitter-Base Voltage Collector Current(DC) Power Dissipation@TA=25oC Power Dissipation@TC=25oC Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Case Operating & Storage Temperature -100 625 5.0 1.5 12 200 83.3 G DIMENSIONS C/W C/W o DIM A B C D E G RqJC o Tj, TSTG -55~150 C INCHES MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com BC556 thru BC558B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min MCC Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 –5.0 –5.0 –5.0 — — — — — — –80 –50 –30 — — — — — — V –65 –45 –30 — — — — — — V V Collector – Base Breakdown Voltage (IC = –100 µAdc) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = –10 µAdc, VCE = –5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C VCE(sat) — VBE(sat) — VBE(on) –0.55 — –0.62 –0.7 –0.7 –0.82 — –1.0 V --–0.3 V — — — 120 120 120 120 180 420 — — — 90 150 270 — — — 170 290 500 120 180 300 — — — 500 800 800 220 460 800 — — — V — (IC = –2.0 mAdc, VCE = –5.0 V) (IC = –100 mAdc, VCE = –5.0 V) Collector – Emitter Saturation Voltage (IC = –100mAdc, IB = –5.0 mAdc) Base – Emitter Saturation Voltage (IC = –100 mAdc, IB = –5.0mAdc) Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc) (IC = –10 mAdc, VCE = –5.0 Vdc) SMALL–SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Cob — — — — 280 320 360 3.0 — — — 6.0 pF MHz Output Capacitance (VCB = –10 V, IC = 0, f = 1.0 MHz) www.mccsemi.com BC556 thru BC558B BC557/BC558 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = –10 V TA = 25°C V, VOLTAGE (VOLTS) –1.0 –0.9 –0.8 –0.7 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 0.2 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 IC, COLLECTOR CURRENT (mAdc) –100 –200 0 –0.1 –0.2 TA = 25°C MCC VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = –10 V 0.3 VCE(sat) @ IC/IB = 10 –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mAdc) –50 –100 Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages –2.0 VCE , COLLECTOR–EMITTER VOLTAGE (V) θVB , TEMPERATURE COEFFICIENT (mV/ ° C) TA = 25°C –1.6 1.0 –55°C to +125°C 1.2 1.6 2.0 2.4 2.8 –1.2 IC = –10 mA IC = –50 mA IC = –20 mA IC = –200 mA IC = –100 mA –0.8 –0.4 0 –0.02 –0.1 –1.0 IB, BASE CURRENT (mA) –10 –20 –0.2 –10 –1.0 IC, COLLECTOR CURRENT (mA) –100 Figure 3. Collector Saturation Region f T CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) , Figure 4. Base–Emitter Temperature Coefficient 10 7.0 C, CAPACITANCE (pF) 5.0 Cob Cib TA = 25°C 400 300 200 150 100 80 60 40 30 20 –0.5 VCE = –10 V TA = 25°C 3.0 2.0 1.0 –0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product www.mccsemi.com BC556 thru BC558B BC556 –1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = –5.0 V TA = 25°C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TJ = 25°C –0.8 VBE(sat) @ IC/IB = 10 –0.6 VBE @ VCE = –5.0 V –0.4 MCC –0.2 0.2 0 –0.2 VCE(sat) @ IC/IB = 10 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (AMP) –0.5 –50 –100 –200 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mA) –0.1 –0.2 Figure 7. DC Current Gain Figure 8. “On” Voltage VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) –2.0 θVB, TEMPERATURE COEFFICIENT (mV/ ° C) –1.0 –1.6 IC = –10 mA –20 mA –50 mA –100 mA –200 mA –1.4 –1.2 –1.8 θVB for VBE –55°C to 125°C –0.8 –2.2 –0.4 TJ = 25°C 0 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 IB, BASE CURRENT (mA) –5.0 –10 –20 –2.6 –3.0 –0.2 –0.5 –1.0 –50 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mA) –100 –200 Figure 9. Collector Saturation Region Figure 10. Base–Emitter Temperature Coefficient f T CURRENT–GAIN – BANDWIDTH PRODUCT , 40 TJ = 25°C C, CAPACITANCE (pF) 20 Cib 500 VCE = –5.0 V 200 100 50 10 8.0 6.0 4.0 2.0 –0.1 –0.2 Cob 20 –0.5 –1.0 –2.0 –5.0 –10 –20 VR, REVERSE VOLTAGE (VOLTS) –50 –100 –100 –1.0 –10 IC, COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product www.mccsemi.com