MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
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BDX33 THRU BDX33D
NPN Silicon Power Darlingtons
0,9:708
•
• • • • • •
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Designed For Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D 70W at 25 Cass Temperature 10A Continuous Collector Current Minimum hFE of 750 at 3.0V, 3.0A
:
Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1
$EVROXWH 0D[LPXP 5DWLQJV # & 8QOHVV 2WKHUZLVH 1RWHG
°
TO-220
Value 45 60 80 100 100 45 60 80 100 100 5.0 10 0.3 70 2.0 -55~+150 -55~+150 -55~+150 Unit
F B C S Q T A U 12 H 3
Symbol VCBO
VCEO
VEBO IC IB PTOT PTOT TJ TSTG TA
Rating Collector-Base Voltage (IE=0) BDX33 BDX33A BDX33B BDX33C BDX33D Collector-Emitter Voltage (IB=0) BDX33 BDX33A BDX33B BDX33C BDX33D Emitter-Base Voltage Continuous Collector Current Continuous Base Current Continuous Device Dissipation at (or below) 25 Case Temperature (see Note2) Continuous Device Dissipation at (or below) 25 Free Air Temperature (see Note 3) Operating Free Air Temperature Range Storage Temperature Range Operating Free-Air Temperature Range
V
V
: :
V A A W W
K
L G N
V D
PIN 1. PIN 2. PIN 3.
J R
BASE COLLECTOR EMITTER
: : : : :
D F G H J K L N Q R S T U V
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7. 2. Derate Linearly to 150 Case Temperature at the Rate of 0.56 W/ 3. Derate Linearly to 150 Free Air Temperature at the Rate of 16m W/
(OHFWULFDO &KDUDFWHULVWLFV # & 8QOHVV 2WKHUZLVH 6SHFLILHG
: :
°
DIM A B C
DIMENSIONS INCHES MM MIN MAX MIN MAX .560 .625 14.22 15.88 .380 .420 9.65 10.67 .140 .190 3.56 4.82 .020 .139 .190 --.012 .500 .045 .190 .100 .080 .045 .230 ----.045 .045 .161 .110 .250 .025 .580 .060 .210 .135 .115 .055 .270 .050 ----0.51 3.53 2.29 --0.30 12.70 1.14 4.83 2.54 2.04 1.14 5.84 ----1.15 1.14 4.09 2.79 6.35 0.64 14.73 1.52 5.33 3.43 2.92 1.39 6.86 1.27 -----
NOTE
Symbol
V(BR)CEO
Parameter Collector-Emitter Breakdown Voltage (IC=100mA, IB=0,see note 3) BDX33 BDX33A BDX33B BDX33C BDX33D
Min
Typ
Max
Unit
∅
45 60 80 100 100
V
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BDX33 thru BDX33D
Symbol
MCC
TM
Micro Commercial Components
Parameter Min Typ Max Collector-Emitter Cut-Off Current 0.5 (VCE=30V, IB=0) BDX33 0.5 (VCE=30V, IB=0) BDX33A 0.5 ICEO (VCE=40V, IB=0) BDX33B 0.5 (VCE=50V, IB=0) BDX33C 0.5 (VCE=60V, IB=0) BDX33D ÄÃ (VCE=30V, IB=0, TC=100 ) BDX33 ÄÃ BDX33A (VCE=30V, IB=0, TC=100 ) ÄÃ BDX33B (VCE=40V, IB=0, TC=100 ) ÄÃ BDX33C (VCE=50V, IB=0, TC=100 ) ÄÃ BDX33D (VCE=60V, IB=0, TC=100 ) Collector Cut-Off Current 1.0 (VCB=45V, IE=0) BDX33 1.0 (VCB=60V, IE=0) BDX33A 1.0 ICBO (VCB=80V, IE=0) BDX33B 1.0 (VCB=100V, IE=0) BDX33C 1.0 (VCB=100V, IE=0) BDX33D ÈÁÃ (VCB=45V, IE=0, TC=100 ) BDX33 ÈÁÃ BDX33A (VCB=60V, IE=0, TC=100 ) ÈÁÃ (VCB=80V, IE=0, TC=100 ) BDX33B ÈÁÃ (VCB=100V, IE=0, TC=100 ) BDX33C ÈÁÃ BDX33D (VCB=120V, IE=0, TC=100 ) IEBO Emitter Cut-Off Current (VEB=5.0V, IC=0) 10 hFE Forward Current Transfer Ratio 750 (VCE=3.0V, IC=4.0A) BDX33 750 (VCE=3.0V, IC=4.0A) BDX33A 750 (VCE=3.0V, IC=3.0A) (see notes 4 and 5) BDX33B 750 (VCE=3.0V, IC=3.0A) BDX33C 750 (VCE=3.0V, IC=3.0A) BDX33D VBE(ON) Base-Emitter Voltage 2.5 (VCE=3.0V, IC=4.0A) BDX33 2.5 (VCE=3.0V, IC=4.0A) BDX33A 2.5 (VCE=3.0V, IC=3.0A) (see notes 4 and 5) BDX33B 2.5 (VCE=3.0V, IC=3.0A) BDX33C 2.5 (VCE=3.0V, IC=3.0A) BDX33D VCE(SAT) Collector-Emitter Saturation Voltage 2.5 (IB=8.0mA, IC=4.0A) BDX33 2.5 (IB=8.0mA, IC=4.0A) BDX33A 2.5 (IB=6.0mA, IC=3.0A) (see notes 4 and 5) BDX33B 2.5 (IB=6.0mA, IC=3.0A) BDX33C 2.5 (IB=6.0mA, IC=3.0A) BDX33D VEC Parallel Diode Forward Voltage (IE=8.0A, IB=0) 4.0 NOTES: 4. These parameters must be measured using pulse techniques, tp=300V GXW\ F\FOH 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Unit
: : : : :
mA
: : : : :
mA
mA
V
V
V
7KHUPDO &KDUDFWHULVWLFV
Symbol R-& R-$
Parameter Junction to Case Thermal Resistance Junction to Free Air Thermal Resistance
Min
Typ
5HVLVWLYH/RDG6ZLWFKLQJ &KDUDFWHULVWLFV DW
Symbol ton toff
Parameter Turn-On Time Turn-Off Time
Test Conditions IC=3.0A, IB(on)=12mA, IB(off)=-12mA VBE(off)=-3.5V, RL
WP V GF
:
Max 1.78 62.5
:/W :/W
Unit s s
Unit
&DVH 7HPSHUDWXUH
Min
2%
Typ 1.0 5.0
Max
ô ô
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
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BDX33 thru BDX33D
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V 50000
TCS130AF
MCC
Micro Commercial Components
TM
COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
2·0 tp = 300 µs, duty cycle < 2% IB = IC / 100
TCS130AH
hFE - Typical DC Current Gain
TC = -40°C TC = 25°C TC = 100°C 10000
1·5
1000
1·0
VCE = 3 V t p = 300 µs, duty cycle < 2% 100 0·5 1·0 IC - Collector Current - A 10
TC = -40°C TC = 25°C TC = 100°C 0·5 0·5 1·0 IC - Collector Current - A 10
Figure 1. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
3·0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40°C TC = 25°C TC = 100°C Ptot - Maximum Power Dissipation - W
Figure 2.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
80 70 60 50 40 30 20 10
TCS130AJ
TIS130AB
2·5
2·0
1·5
1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0·5 0·5 1·0 IC - Collector Current - A 10
0 0 25 50 75 100 125 150 TC - Case Temperature - °C
Figure 3.
Figure 4.
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MCC
Micro Commercial Components
TM
Ordering Information :
Device
Part Number-BP
Packing
Bulk;1Kpcs/Box
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