ER3G

MCC Features ER3A
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU ER3J










• • • • • For Surface Mount Applications Extremely Low Thermal Resistance Easy Pick And Place High Temp Soldering: 250 °C for 10 Seconds At Terminals\ Super Fast Recovery Times For High Effieciency 3 Amp Super Fast Recovery Silicon Rectifier 50 to 600 Volts DO-214AB (SMCJ) (LEAD FRAME) G Maximum Ratings • • • Operating Temperature: -50°C to +150°C Storage Temperature: -50°C to +150°C Maximum Thermal Resistance; 16 °C/W Junction To Lead Device Marking Maximum Recurrent Peak Reverse Voltage 50V 100V 150V 200V 400V 600V Maximum RMS Voltage 35V 70V 105V 140V 280V 420V Maximum DC Blocking Voltage 50V 100V 150V 200V 400V 600V MCC Catalog Number ER3A ER3B ER3C ER3D ER3G ER3J H ER3A ER3B ER3C ER3D ER3G ER3J D C A E B F Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage ER3A-3D ER3G ER3J Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time Typical Junction Capacitance IF(AV) IFSM 3.0A 100A TL = 75°C 8.3ms, half sine DIMENSIONS INCHES MIN .079 .108 .002 .006 .030 ..305 .260 .220 MM MIN 2.00 2.75 0.051 0.152 0.76 7.75 6.60 5.59 DIM A B C D E F G H MAX .103 .128 .008 .012 .050 .320 .280 .245 MAX 2.62 3.25 0.203 0.305 1.27 8.13 7.11 6.22 NOTE VF .95V 1.25V 1.70V 5µA 200µA 35ns 45pF IFM = 3.0A; TJ = 25°C SUGGESTED SOLDER PAD LAYOUT 0.185 IR TJ = 25°C TJ = 100°C IF=0.5A, IR=1.0A, Irr=0.25A Measured at 1.0MHz, VR=4.0V 0.121” Trr CJ 0.060” *Pulse test: Pulse width 300 µsec, Duty cycle 2% www.mccsemi.com ER3A thru ER3J Figure 1 Typical Forward Characteristics 100 60 40 20 10 6 4 2 Amps 1 .5 .6 .4 .2 .1 .06 .04 .02 .01 .4 .6 .8 1.0 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts Figure 3 Junction Capacitance 1.2 1.4 1.6 0 ER3J Amps 25°C 1.0 1.5 ER3A-3D ER3E-3G 2.0 2.5 3.0 Figure 2 Forward Derating Curve MCC Single Phase, Half Wave 60Hz Resistive or Inductive Load 40 60 80 100 °C Average Forward Rectified Current - Amperes ersus v Lead Temperature - °C 120 140 160 100 60 40 20 pF 10 6 4 2 1 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 400 1000 TJ=25°C Junction Capacitance - pFversus Reverse Voltage - Volts www.mccsemi.com ER3A thru ER3J Figure 4 Typical Reverse Characteristics 1000 600 400 200 100 60 75 40 20 25 µ Amps 10 0 6 4 2 1 .6 .4 .2 .1 20 40 TJ=25°C TJ=75°C 1 2 4 6 Amps 50 TJ=100°C 100 MCC Figure 5 Peak Forward Surge Current 150 125 8 10 Cycles 20 40 60 80 100 Peak Forward Surge Current - Amperesversus Number Of Cycles At 60Hz - Cycles 60 80 Volts 100 120 140 Instantaneous Reverse Leakage Current - MicroAmperes ersus v Percent Of Rated Peak Reverse Voltage - Volts Figure 6 Reverse Recovery Time Characteristic And Test Circuit Diagram 50Ω 10Ω trr +0.5A 0 25Vdc Pulse Generator Note 2 1Ω Oscilloscope Note 1 -0.25 -1.0 1cm Set Time Base for 20/100ns/cm Notes: 1. Rise Time = 7ns max. Input impedance = 1 megohm, 22pF 2. Rise Time = 10ns max. Source impedance = 50 ohms 3. Resistors are non-inductive www.mccsemi.com