SI01P10-TP

SI01P10 Features • • • • • TrenchFET Power MOSFET Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. “Green” Device (Note 1) Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) P-Channel MOSFET Maximum Ratings • Operating Junction Temperature Range: -55°C to +150°C • Storage Temperature: -55°C to +150°C • Thermal Resistance: 162°C/W Junction to Ambient(2.3) Parameter Symbol Rating SOT-23 Unit Drain -source Voltage VDS -100 V Gate -Source Voltage VGS ±20 V Continuous Drain Current(2.3) ID -1 A Continuous Source-Drain Diode Current IS -1 A Power Dissipation PD 0.77 W A D 3 C 1 F B 2 E H G J L K DIMENSIONS INCHES MM DIM MIN MAX MIN MAX A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 C 0.047 0.055 1.20 1.40 0.034 0.041 0.85 1.05 D E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 G 0.0004 0.006 0.01 0.15 H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 L 0.007 0.020 0.20 0.50 Internal Structure D 1. *$7E 2. 6285&( 3. '5$,1 G S Marking:0101 NOTE Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 2.000 0.037 0.950 Rev.3-2-12012020 1/4 inches mm 0.037 0.950 MCCSEMI.COM SI01P10 MOSFET ELECTRICAL CHARACTERISTICS(TA = 25℃ unless otherwise noted) Parameter Test Condition Symbol Min Type Max Unit Off Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID = -250µA -100 V Zero gate voltage drain current IDSS VDS = -100V, VGS = 0V -1 µA Gate-body leakage current IGSS VGS = ±20V, VDS = 0V ±100 nA Gate threshold voltage VGS(th) VDS = VGS, ID = -250µA -2.2 -3.0 V Drain-source on-resistance RDS(on) VGS = -10V, ID = -1.0A 580 800 VGS = -4.5V, ID = -0.5A 650 1000 On Characteristics(4) -1.5 mΩ Dynamic Characteristics Input Capacitance Ciss 388 Output Capacitance Coss Reverse Transfer Capacitance Crss 15 Total Gate Charge Qg 3.2 Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.1 Turn-on delay time td(on) 10 VDS = -40V, VGS = 0V, f = 1MHz pF 19 Switching Characteristics Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) VDS =-10V, VGS =-10V, ID = -1A 0.5 VDD = -10V, VG = -10V, ID = -1A 32 RG = 2.5Ω 28 tf nC ns 9 Diode Characteristics Diode forward current IS Diode pulsed forward current ISM Diode Forward voltage VDS TA = 25℃ VGS = 0V, IS = -1A -1 A -4 A -1.2 V Note: 1. Halogen free "Green” products are defined as those which contain