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EVB71112-433-ASK-A

EVB71112-433-ASK-A

  • 厂商:

    MELEXIS(迈来芯)

  • 封装:

  • 描述:

    EVB71112-433-ASK-A - 868/915MHz Receiver Evaluation Board Description - Melexis Microelectronic Syst...

  • 数据手册
  • 价格&库存
EVB71112-433-ASK-A 数据手册
EVB71112 868/915MHz Receiver Evaluation Board Description Features ! ! ! ! ! ! Double-conversion superhet architecture for low high degree of image rejection FSK for digital data and FM reception for analog signal transmission FSK/FM demodulation with phase-coincidence demodulator Low current consumption in active mode and very low standby current Switchable LNA gain for improved dynamic range RSSI allows signal strength indication and ASK detection Ordering Information Part No. EVB71112-868-FSK-C EVB71112-868-ASK-C EVB71112-915-FSK-C EVB71112-915-ASK-C Application Examples ! ! ! ! ! ! " ! Tire Pressure Monitoring Systems (TPMS) Remote Keyless Entry (RKE) Wireless access control Alarm and security systems Garage door openers Remote Controls Home and building automation Low-power telemetry systems Evaluation Board General Description The TH71112 FSK/FM/ASK double-conversion superheterodyne receiver IC is designed for applications in the European 868 MHz industrial-scientific-medical (ISM) band, according to the EN 300 220 telecommunications standard. It can also be used for any other system with carrier frequencies ranging from 750 MHz to 990 MHz (e.g. for applications to FCC part 15). 39012 71112 01 Rev. 011 Page 1 of 14 EVB Description June/07 EVB71112 868/915MHz Receiver Evaluation Board Description Document Content 1 Theory of Operation ...................................................................................................3 1.1 1.2 1.3 1.4 1.5 1.6 1.6.1 1.6.2 General............................................................................................................................. 3 EVB Technical Data Overview ......................................................................................... 3 Block Diagram .................................................................................................................. 4 Mode Configurations ........................................................................................................ 4 LNA GAIN Control ............................................................................................................ 4 Frequency Planning.......................................................................................................... 4 Selected Frequency Plans........................................................................................................... 5 Maximum Frequency Coverage................................................................................................... 5 2 Application Circuits ...................................................................................................6 2.1 2.1.1 2.1.2 2.1.3 FSK Application Circuit..................................................................................................... 6 Circuit Diagram for FSK Reception.............................................................................................. 6 Board Component Values for FSK .............................................................................................. 7 Component Arrangement Top Side for FSK Reception .............................................................. 8 2.2 2.2.1 2.2.2 2.2.3 ASK Application Circuit..................................................................................................... 9 Circuit Diagram for ASK Reception ............................................................................................. 9 Board Component Values for ASK ............................................................................................ 10 Component Arrangement Top Side for ASK Reception ............................................................ 11 3 4 5 Evaluation Board Layouts ....................................................................................... 12 Board Variants.......................................................................................................... 12 Package Description ................................................................................................ 13 5.1 Soldering Information ..................................................................................................... 13 6 Disclaimer .................................................................................................................14 39012 71112 01 Rev. 011 Page 2 of 14 EVB Description June/07 EVB71112 868/915MHz Receiver Evaluation Board Description 1 1.1 Theory of Operation General With the TH71112 receiver chip, various circuit configurations can be arranged in order to meet a number of different customer requirements. For FM/FSK reception the IF tank used in the phase coincidence demodulator can also be constituted by a ceramic discriminator with a varactor diode to create an AFC circuit. In ASK configuration, the RSSI signal is fed to an ASK detector, which is constituted by the operational amplifier. The superheterodyne configuration is double conversion where MIX1 and MIX2 are driven by the internal local oscillator signals LO1 and LO2, respectively. This allows a high degree of image rejection, achieved in conjunction with an RF front-end filter. Efficient RF front-end filtering is realized by using a SAW, ceramic or helix filter in front of the LNA and by adding an LC filter at the LNA output. A single-conversion variant, called TH71111, is also available. Both Receiver ICs have the same die. At the TH71111 the second mixer MIX2 operates as an amplifier. The TH71112 receiver IC consists of the following building blocks: # # # # # # # # PLL synthesizer (PLL SYNTH) for generation of the first and second local oscillator signals LO1 and LO2, parts of the PLL SYNTH are: the high-frequency VCO1, the feedback dividers DIV_16 and DIV_2, a phase-frequency detector (PFD) with charge pump (CP) and a crystal-based reference oscillator (RO) Low-noise amplifier (LNA) for high-sensitivity RF signal reception First mixer (MIX1) for down-conversion of the RF signal to the first IF (IF1) Second mixer (MIX2) for down-conversion of the IF1 to the second IF (IF2) IF amplifier (IFA) to amplify and limit the IF2 signal and for RSSI generation Phase coincidence demodulator (DEMOD) with third mixer (MIX3) to demodulate the IF signal Operational amplifier (OA) for data slicing, filtering and ASK detection Bias circuitry for bandgap biasing and circuit shutdown 1.2 EVB Technical Data Overview ! Range of first IF2: 400 kHz to 22 MHz ! Maximum input level: -10 dBm @ ASK 0 dBm @ FSK ! Image rejection: > 60 dB (e.g. with 868.3 MHz SAW front-end filter and at 10.7 MHz IF2) ! Spurious emission: < -70 dBm ! Input frequency acceptance range: up to ±100 kHz ! RSSI range: 70 dB ! FM/FSK deviation range: ±2.5 kHz to ±80 kHz ! Maximum analog modulation frequency: 15 kHz ! Input frequency range: 750 MHz to 990 MHz ! Power supply range: 2.3 V to 5.5 V @ ASK 2.7 V to 5.5 V @ FSK ! Temperature range: -40 °C to +85 °C ! Standby current: 50 nA ! Operating current: 7.5 mA @ low gain mode 9.2 mA @ high gain mode ! Sensitivity: -109 dBm @ ASK 1) -103 dBm @ FSK 2) ! Range of first IF1: 10 MHz to 80 MHz 1) at 4 kbps NRZ, BER = 3⋅10-3, 180 kHz IF filter BW, incl. 3 dB SAW front-end-filter loss 2) at 4 kbps NRZ, BER = 3⋅10-3, ± 20 kHz FSK deviation, 180 kHz IF filter BW, incl. 3 dB SAW front-endfilter loss For more detailed information, please refer to the latest TH71112 data sheet revision 39012 71112 01 Rev. 011 Page 3 of 14 EVB Description June/07 EVB71112 868/915MHz Receiver Evaluation Board Description 1.3 Block Diagram IN_MIX1 OUT_MIX2 FBC1 IF1N VCC_MIX VEE_LNAC GAIN_LNA OUT_LNA VEE_MIX OUT_IFA IN_DEM IF1P VEE_IF IN_IFA 2 3 4 5 6 7 8 9 RSSI 1 10 11 12 13 21 14 15 16 IN_LNA 31 MIX1 LNA LO1 IF1 MIX2 IF2 LO2 MIX3 OUTP OUTN 23 24 IFA OAP OA DIV16 DIV2 PFD RO VCO1 VCC_LNA VEE_LNA 20 OAN 19 OUT_OA BIAS VCC_BIAS VEE_BIAS VCC_PLL VEE_RO 18 CP ENRX 32 30 29 LF 26 RO 25 27 28 22 17 Fig. 1: TH71112 block diagram 1.4 Mode Configurations ENRX 0 1 Mode RX standby RX active Description RX disabled RX enable Note: ENRX are pulled down internally 1.5 LNA GAIN Control VGAIN_LNA < 0.8 V > 1.4 V Mode HIGH GAIN LOW GAIN Description LNA set to high gain LNA set to low gain Note: hysteresis between gain modes to ensure stability 1.6 Frequency Planning Frequency planning is straightforward for single-conversion applications because there is only one IF that can be chosen, and then the only possible choice is low-side or high-side injection of the LO signal (which is now the one and only LO signal in the receiver). The receiver’s double-conversion architecture requires careful frequency planning. Besides the desired RF input signal, there are a number of spurious signals that may cause an undesired response at the output. Among them are the image of the RF signal (that must be suppressed by the RF front-end filter), spurious signals injected to the first IF (IF1) and their images which could be mixed down to the same second IF (IF2) as the desired RF signal (they must be suppressed by the LC filter at IF1 and/or by low-crosstalk design). 39012 71112 01 Rev. 011 Page 4 of 14 EVB Description June/07 EVB71112 868/915MHz Receiver Evaluation Board Description By configuring the TH71112 for double conversion and using its internal PLL synthesizer with fixed feedback divider ratios of N1 = 16 (DIV_16) and N2 = 2 (DIV_2), four types of down-conversion are possible: low-side injection of LO1 and LO2 (low-low), LO1 low-side and LO2 high-side (low-high), LO1 high-side and LO2 low-side (high-low) or LO1 and LO2 high-side (high-high). The following table summarizes some equations that are useful to calculate the crystal reference frequency (REF), the first IF (IF1) and the VCO1 or first LO frequency (LO1), respectively, for a given RF and second IF (IF2). Injection type REF LO1 IF1 LO2 IF2 high-high (RF – IF2)/30 32•REF LO1 – RF 2•REF LO2 – IF1 low-low (RF – IF2)/34 32•REF RF – LO1 2•REF IF1 – LO2 high-low (RF + IF2)/30 32•REF LO1 – RF 2•REF IF1 – LO2 low-high (RF + IF2)/34 32•REF RF – LO1 2•REF LO2 – IF1 1.6.1 Selected Frequency Plans The following table depicts crystal, LO and image signals considering the examples of 868.3 MHz and 915 MHz RF reception at IF2 = 10.7 MHz. The columns in bold depict the selected frequency plans to receive at 868.3 MHz and 915 MHz, respectively. RF = 868.3 MHz 28.58667 914.77333 46.47333 57.17333 Signal type RF = 868.3 MHz low-low 25.22353 807.15294 61.14706 50.44706 746.00588 39.74706 RF = 868.3 MHz high-low 29.3 937.6 69.3 58.6 1006.9 47.9 RF = 868.3 MHz low-high 25.85294 827.29412 41.00588 51.70588 786.28824 62.40588 RF = 915 MHz high-high 30.14333 964.58667 49.58667 60.28667 1014.17 70.98667 RF = 915 MHz low-low 26.59706 851.10588 63.89412 53.19412 787.21176 42.49412 RF = 915 MHz high-low 30.85667 987.41333 72.41333 61.71333 1059.83 51.01333 RF = 915 MHz low-high 27.22647 871.24706 43.75294 54.45294 827.49412 65.15294 Injection type high-high REF / MHz LO1 / MHz IF1 / MHz LO2 / MHz RF image/MHz 961.24667 IF1 image/MHz 67.87333 1.6.2 Maximum Frequency Coverage fmin high-low 739.3 25.0 800 60.7 50.0 10.7 fmax low-low 998.825 29.0625 930 68.825 58.125 10.7 The selection of the reference crystal frequency is based on some assumptions. As for example: the first IF and the image frequencies should not be in a radio band where strong interfering signals might occur (because they could represent parasitic receiving signals), the LO1 signal should be in the range of 800 MHz to 930 MHz (because this is the optimum frequency range of the VCO1). Furthermore the first IF should be as high as possible to achieve highest RF image rejection. Parameter Injection type RF / MHz REF / MHz LO1 / MHz IF1 / MHz LO2 / MHz IF2/ MHz 39012 71112 01 Rev. 011 Page 5 of 14 EVB Description June/07 EVB71112 868/915MHz Receiver Evaluation Board Description 2 2.1 2.1.1 Application Circuits FSK Application Circuit Circuit Diagram for FSK Reception OUT_OA GND 12 FSK output CB3 VCC OAN 19 OUT_OA 18 VCC 17 OUTP GND 12 C15 C16 C17 XTAL C1 R5 R4 OUTP 23 RSSI 21 24 OAP 20 VEE 22 RSSI GND 12 GND RO VCC ENRX GND IN_LNA 12 CERDIS 16 VCC 123 C_RO CB2 R1 C3 25 VEE 26 RO 27 VCC 28 ENRX 29 LF 30 VEE OUT_IFA 15 VCC 14 C12 VCC CB4 C9 C11 C10 TH71112 GAIN_LNA OUT_LNA IN_MIX1 FBC2 13 FBC1 12 IN_IFA 11 VEE 10 OUT_MIX2 9 IF1N VCC R2 L1 50 6 1 SAWFIL 3 4 L2 C5 31 IN_LNA 32 VCC VEE IF1P VEE C4 CERFIL CB1 1 2 3 4 5 6 7 8 C7 L4 C8 CB5 L5 CB6 L3 VCC CB8 CB7 GND VCC 21 Circuit Features • • Tolerates input frequency variations Well-suited for NRZ, Manchester and similar codes 39012 71112 01 Rev. 011 Page 6 of 14 EVB Description June/07 EVB71112 868/915MHz Receiver Evaluation Board Description 2.1.2 Part C1 C3 C4 C5 C7 C8 C9 C10 C11 C12 C15 C16 C17 CB1 to CB5 CB7 to CB8 CB6 C_RO R1 R2 R4 R5 L1 L2 L3 L4 L5 Board Component Values for FSK Size 0805 0603 0603 0603 0603 0603 0603 0603 0603 0805 0805 0805 0805 0603 0805 0603 0805 0603 0805 0805 0603 0603 0603 0603 0603 SMD 6x3.5 HC49 SMD Value @ 868.3 MHz 22 pF 1 nF 4,7 pF 2.7 pF 1.0 pF 22 pF 33 nF 1 nF 1 nF 10 pF 100 pF 1.5 nF 10 nF 330 pF 33 nF 330 pF 10 kΩ 330 Ω 330 kΩ 220 kΩ 22 nH 22 nH 10 nH 100 nH 100 nH Value @ 915 MHz 22 pF 1 nF NIP NIP 0.68 pF 22 pF 33 nF 1 nF 1 nF 10 pF 100 pF 1.5 nF 10 nF 330 pF 33 nF 330 pF 10 k Ω 330 Ω 330 kΩ 220 kΩ 0Ω 0Ω 10 nH 100 nH 100 nH Tolerance ±5% ±10% ±5% ±5% ±5% ±5% ±10% ±10% ±10% ±5% ±5% ±10% ±10% ±10% ±10% ±5% ±5% ±5% ±5% ±5% ±5% ±5% ±5% ±5% ±5% ±25ppm cal. ±30ppm temp. Description crystal series capacitor loop filter capacitor capacitor to match SAW filter input capacitor to match SAW filter output MIX1 input matching capacitor IF1 tank capacitor IFA feedback capacitor IFA feedback capacitor IFA feedback capacitor DEMOD phase-shift capacitor demodulator output low-pass capacitor, this value for data rates < 20 kbps NRZ, for higher data rates decrease the value RSSI output low-pass capacitor data slicer capacitor, this value for data rates > 0.8 kbps NRZ, for lower data rates increase the value de-coupling capacitor de-coupling capacitor optional capacitor, to couple external RO signal loop filter resistor optional CERFIL output matching resistor data slicer resistor loading resistor SAW filter matching inductor from Würth-Elektronik (WE-KI series), or equivalent part LNA output tank inductor from Würth-Elektronik (WE-KI series), or equivalent part IF1 tank inductor from Würth-Elektronik (WE-KI series), or equivalent part fundamental-mode crystal from Telcona/Horizon (HEX22 series) or equivalent part fundamental-mode crystal, Cload = 10 pF to 15 pF, C0, max = 7 pF, R1, max = 50 Ωl low-loss SAW filter from Murata or equivalent part XTAL 25.22353 MHz @ RF = 868.3 MHz 26.59706 MHz @ RF = 915 MHz SAWFIL SMD 3x3 SMD 3.8x3.8 SMD 3.45x3.1 SMD 4.5x2 SAFCC868MSL0X00 (f0 =868.3 MHz) SAFCH915MAL0N00 (f0 = 915 MHz) SFECF10M7HA00 CDSCB10M7GA135 B3dB = 2 MHz B3dB = 40 MHz B3dB = 180 kHz CERFIL CERDIS ceramic filter from Murata, or equivalent part ceramic discriminator from Murata, or equivalent part 39012 71112 01 Rev. 011 Page 7 of 14 EVB Description June/07 EVB71112 868/915MHz Receiver Evaluation Board Description 2.1.3 Component Arrangement Top Side for FSK Reception Board size is 42.7mm x 37.5mm Melexis 1 C15 R5 1 C16 OUT_OA C17 OUTN OUTP RSSI 1 R4 ENRX RO XTAL 0Ω 1 0Ω C-RO C1 1 CB3 24 25 17 16 CB2 C9 C11 C10 CB6 RF_input L1 CB4 C3 R1 C12 CERDIS TH71112 C4 C5 L2 32 1 8 9 CB1 C7 CB5 C8 L4 CB7 L5 IN_LNA L3 CB8 EVB711XX_4 VCC 39012 71112 01 Rev. 011 Page 8 of 14 EVB Description June/07 1 R2 EVB71112 868/915MHz Receiver Evaluation Board Description 2.2 2.2.1 ASK Application Circuit Circuit Diagram for ASK Reception OUT_OA GND 12 ASK output CB3 VCC OAN 19 OUT_OA 18 VCC 17 16 OUT_IFA 15 VCC 14 C16 C17 R4 XTAL C1 OUTP 23 RSSI 21 24 OAP 20 VEE 22 GND RO VCC ENRX GND IN_LNA 12 VCC 123 C_RO CB2 R1 C3 25 VEE 26 RO 27 VCC 28 ENRX 29 LF 30 VEE RSSI GND 12 VCC CB4 C9 C11 C10 TH71112 GAIN_LNA OUT_LNA IN_MIX1 FBC2 13 FBC1 12 IN_IFA 11 VEE 10 OUT_MIX2 9 IF1N VCC R2 L1 50 6 1 SAWFIL 3 4 L2 C5 31 IN_LNA 32 VCC VEE IF1P VEE C4 CERFIL CB1 1 2 3 4 5 6 7 8 C7 L4 C8 CB5 L5 CB6 L3 VCC CB8 CB7 GND VCC 21 39012 71112 01 Rev. 011 Page 9 of 14 EVB Description June/07 EVB71112 868/915MHz Receiver Evaluation Board Description 2.2.2 Part C1 C3 C4 C5 C7 C8 C9 C10 C11 C16 Board Component Values for ASK Size 0805 0603 0603 0603 0603 0603 0603 0603 0603 0805 Value @ 868.3 MHz 22 pF 1 nF 4,7 pF 2.7 pF 1.0 pF 22 pF 33 nF 1 nF 1 nF 1.5 nF Value @ 915 MHz 22 pF 1 nF NIP NIP 0.68 pF 22 pF 33 nF 1 nF 1 nF 1.5 nF Tolerance ±5% ±10% ±5% ±5% ±5% ±5% ±10% ±10% ±10% ±10% Description crystal series capacitor loop filter capacitor capacitor to match SAW filter input capacitor to match SAW filter output MIX1 input matching capacitor IF1 tank capacitor IFA feedback capacitor IFA feedback capacitor IFA feedback capacitor RSSI output low-pass capacitor, this value for data rates < 10 kbps NRZ, for higher data rates decrease the value data slicer capacitor, this value for data rates > 0.8 kbps NRZ, for lower data rates increase the value de-coupling capacitor de-coupling capacitor optional capacitor, to couple external RO signal loop filter resistor optional CERFIL output matching resistor data slicer resistor SAW filter matching inductor from Würth-Elektronik (WE-KI series), or equivalent part LNA output tank inductor from Würth-Elektronik (WE-KI series), or equivalent part IF1 tank inductor from Würth-Elektronik (WE-KI series), or equivalent part fundamental-mode crystal from Telcona/Horizon (HEX22 series) or equivalent part fundamental-mode crystal, Cload = 10 pF to 15 pF, C0, max = 7 pF, R1, max = 50 Ωl low-loss SAW filters from Murata or equivalent part C17 CB1 to CB5 CB7 to CB8 CB6 C_RO R1 R2 R4 L1 L2 L3 L4 L5 0805 0603 0805 0603 0805 0603 0805 0603 0603 0603 0603 0603 SMD 6x3.5 HC49 SMD 10 nF 330 pF 33 nF 330 pF 10 kΩ 330 Ω 330 kΩ 22 nH 22 nH 10 nH 100 nH 100 nH 10 nF 330 pF 33 nF 330 pF 10 k Ω 330 Ω 330 kΩ 0Ω 0Ω 10 nH 100 nH 100 nH ±10% ±10% ±10% ±5% ±5% ±5% ±5% ±5% ±5% ±5% ±5% ±5% ±25ppm cal. ±30ppm temp. XTAL 25.22353 MHz @ RF = 868.3 MHz 26.59706 MHz @ RF = 915 MHz SAWFIL SMD 3x3 SMD 3.8x3.8 SMD 3.45x3.1 SAFCC868MSL0X00 (f0 =868.3 MHz) SAFCH915MAL0N00 (f0 = 915 MHz) SFECF10M7HA00 B3dB = 2 MHz B3dB = 40 MHz B3dB = 180 kHz CERFIL ceramic filter from Murata, or equivalent part 39012 71112 01 Rev. 011 Page 10 of 14 EVB Description June/07 EVB71112 868/915MHz Receiver Evaluation Board Description 2.2.3 Component Arrangement Top Side for ASK Reception Board size is 42.7mm x 37.5mm Melexis 1 C16 OUT_OA CB4 17 16 OUTN OUTP RSSI 1 ENRX RO XTAL C17 1 0Ω CB3 24 25 C-RO CB2 C9 C11 C10 CB6 RF_input L1 C3 R1 C1 1 R4 TH71112 C4 C5 L2 32 1 8 9 CB1 C7 CB5 C8 L4 CB7 L5 IN_LNA L3 CB8 EVB711XX_4 VCC 39012 71112 01 Rev. 011 Page 11 of 14 EVB Description June/07 1 R2 EVB71112 868/915MHz Receiver Evaluation Board Description 3 Evaluation Board Layouts Board layout data in Gerber format is available, board size is 37.5mm x 42.7mm. EVB711XX_4 Melexis VCC OUT_OA IN_LNA OUTN OUTP RSSI Melexis PCB top view 4 Board Variants Type EVB71112 Frequency/MHz –315 –433 –868 –915 Note: available EVB setups –FSK –ASK –FM Modulation –A –C Board Execution antenna version connector version 39012 71112 01 Rev. 011 ENRX RO PCB bottom view Page 12 of 14 EVB Description June/07 EVB71112 868/915MHz Receiver Evaluation Board Description 5 Package Description The device TH71112 is RoHS compliant. D D1 24 25 A 17 16 b E E1 e 32 9 1 8 A2 A1 12° +1° c 0.25 (0.0098) 12° +1° L .10 (.004) Fig. 2: LQFP32 (Low profile Quad Flat Package) All Dimension in mm, coplanaríty < 0.1mm E1, D1 min max min max 7.00 E, D 9.00 A 1.40 1.60 0.055 0.063 A1 0.05 0.15 0.002 0.006 A2 1.35 1.45 0.053 0.057 e 0.8 b 0.30 0.45 0.012 0.018 c 0.09 0.20 0.0035 0.0079 L 0.45 0.75 0.018 0.030 α 0° 7° 0° 7° All Dimension in inch, coplanaríty < 0.004” 0.276 0.354 0.031 5.1 Soldering Information • The device TH71112 is qualified for MSL3 with soldering peak temperature 260 deg C according to JEDEC J-STD-2. 39012 71112 01 Rev. 011 Page 13 of 14 EVB Description June/07 EVB71112 868/915MHz Receiver Evaluation Board Description 6 Disclaimer 1) The information included in this documentation is subject to Melexis intellectual and other property rights. Reproduction of information is permissible only if the information will not be altered and is accompanied by all associated conditions, limitations and notices. 2) Any use of the documentation without the prior written consent of Melexis other than the one set forth in clause 1 is an unfair and deceptive business practice. Melexis is not responsible or liable for such altered documentation. 3) The information furnished by Melexis in this documentation is provided ’as is’. Except as expressly warranted in any other applicable license agreement, Melexis disclaims all warranties either express, implied, statutory or otherwise including but not limited to the merchantability, fitness for a particular purpose, title and non-infringement with regard to the content of this documentation. 4) Notwithstanding the fact that Melexis endeavors to take care of the concept and content of this documentation, it may include technical or factual inaccuracies or typographical errors. Melexis disclaims any responsibility in connection herewith. 5) Melexis reserves the right to change the documentation, the specifications and prices at any time and without notice. Therefore, prior to designing this product into a system, it is necessary to check with Melexis for current information. 6) Melexis shall not be liable to recipient or any third party for any damages, including but not limited to personal injury, property damage, loss of profits, loss of use, interrupt of business or indirect, special incidental or consequential damages, of any kind, in connection with or arising out of the furnishing, performance or use of the information in this documentation. 7) The product described in this documentation is intended for use in normal commercial applications. Applications requiring operation beyond ranges specified in this documentation, unusual environmental requirements, or high reliability applications, such as military, medical life-support or life-sustaining equipment are specifically not recommended without additional processing by Melexis for each application. 8) Any supply of products by Melexis will be governed by the Melexis Terms of Sale, published on www.melexis.com. © Melexis NV. All rights reserved. For the latest version of this document, go to our website at: www.melexis.com Or for additional information contact Melexis Direct: Europe, Africa: Phone: +32 1367 0495 E-mail: sales_europe@melexis.com Americas: Phone: +1 603 223 2362 E-mail: sales_usa@melexis.com Asia: Phone: +32 1367 0495 E-mail: sales_asia@melexis.com ISO/TS 16949 and ISO14001 Certified 39012 71112 01 Rev. 011 Page 14 of 14 EVB Description June/07
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