TC59

TC59 Low Dropout, Negative Output Voltage Regulator Features • Low Dropout Voltage - Typically 120mV @ 50mA; 380mV @ 100mA for -5.0V Output Part • Tight Output Voltage Tolerance: ±2% Max • Low Supply Current: 3.5µA, Typ • Small Package: 3-Pin SOT-23A General Description The TC59 is a low dropout, negative output voltage regulator designed specifically for battery-operated systems. Its full CMOS construction eliminates the wasted ground current typical of bipolar LDOs. This reduced supply current significantly extends battery life, particularly when the TC59 is operated in dropout. Other TC59 key features include low supply current (typically 3.0µA) and low dropout operation (typically 120mV at 50mA). The TC59 is packaged in a small 3-Pin SOT-23A package. Applications • • • • Cellular Phones Battery Operated Systems Palmtops Portable Cameras Functional Block Diagram Device Selection Table Part Number TC593002ECB TC595002ECB Output Voltage 3.0V 5.0V Package Temperature Range -VOUT 1 -VOUT 1µF 3 VSS TC59 -VIN 2 -VIN 1µF 3-Pin SOT-23A -40°C to +85°C 3-Pin SOT-23A -40°C to +85°C Other output voltages are available. Please contact Microchip Technology Inc. for details. _ + _ + Package Type 3-Pin SOT-23A VSS 4 TC59 1 -VOUT 2 -VIN NOTE: 3-Pin SOT-23A is equivalent to the EIAJ SC59 2002 Microchip Technology Inc. DS21438B-page 1 © TC59 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings* Input Voltage .........................................................-12V Output Current .................................................. 200mA Output Voltage..................... -VDD – 0.3V to VIN + 0.3V Power Dissipation.............................................150mW Operating Temperature Range............. -40°C to +85°C Storage Temperature Range .............. -40°C to +125°C Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. TC59 ELECTRICAL SPECIFICATIONS Electrical Characteristics: VIN = VR – 1.0V (Note 1), CL = 10µF, TA = 25°C unless otherwise noted. Symbol VIN IDD IOUT(MAX) Parameter Input Voltage Supply Current Maximum Output Current Min — — 100 80 60 1.02 X VR — — Typ — 3 — — — — ±100 0.1 Max -10 7 — — — 0.98 x VR — 0.3 Units V µA mA mA mA V VIN = -6.0V; VR = -5.0V, VOUT ≤ -4.5V VIN = -5.0V; VR = -4.0V, VOUT ≤ -3.6V VIN = -4.0V; VR = -3.0V, VOUT ≤ -2.7V IOUT = 20mA IOUT = 20mA Test Conditions VOUT TC V OUT ∆V OUT/ (∆VIN X VOUT) ∆V OUT Output Voltage Output Voltage Temperature Coefficient Line Regulation ppm/°C IOUT = 20mA %/V IOUT = 20mA; VR = -5.0V; -6.0 < VIN < -10.0V VR = -4.0V; -5.0 < VIN < -10.0V VR = -3.0V; -4.0 < VIN < -10.0V VR = -5.0V; 1mA < IOUT < 50mA VR = -4.0V; 1mA < IOUT < 45mA VR = -3.0V; 1mA < IOUT < 40mA VR = -5.0V; VR = -4.0V; VR = -3.0V; IOUT = 50mA IOUT = 100mA IOUT = 45mA IOUT = 90mA IOUT = 40mA IOUT = 80mA Load Regulation — 40 80 mV VIN - VOUT Dropout Voltage — — — — — — 120 380 120 380 120 380 300 600 300 600 300 600 mV mV mV mV mV mV Note 1: VR is the regulator output voltage setting. For example: VR = -2.5V, -2.7V, -3.0V, -3.3V, -3.6V, -4.0V, -5.0V. © DS21438B-page 2 2002 Microchip Technology Inc. TC59 2.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 2-1. TABLE 2-1: Pin No. (3-Pin SOT-23A) 1 2 3 PIN FUNCTION TABLE Symbol VOUT VIN VSS Regulated voltage output. Supply voltage input. Ground. Description 3.0 DETAILED DESCRIPTION 3.2 Input Capacitor The TC59 is a low quiescent current, precision fixed negative output voltage LDO. Unlike bipolar linear regulators, the TC59 supply current does not increase proportionally with load current. 3.1 Output Capacitor A minimum of 1µF tantalum output capacitor is required. The requirements for the output capacitor are an equivalent series resistance (esr) greater than 0.1Ω and less than 5Ω, with a self-resonant frequency greater than 1MHz. To improve supply noise rejection and transient response, larger output capacitors can be used. Care should be taken when increasing COUT, that the input impedance is not high enough to cause high input impedance oscillation. A 1µF input capacitor is recommended for most applications when the input impedance is on the order of 10Ω. When operating off of a battery input, or there is a large distance from the input source to the LDO, larger input capacitance may be required for stability. When large values of output capacitance are used, the input capacitance should be increased to prevent high source impedance oscillations. 2002 Microchip Technology Inc. DS21438B-page 3 © TC59 4.0 4.1 THERMAL CONSIDERATIONS Power Dissipation EQUATION 4-3: PTOTAL = PD (Pass Device) + PD (Bias) For the TC59, the internal quiescent bias current is so low (3µA typical), the PD (Bias) term of the power dissipation equation can be ignored. The maximum power dissipation can be estimated by using the maximum input voltage and the minimum output voltage to obtain a maximum voltage differential between input and output and multiplying the maximum voltage differential by the maximum output current. The amount of power dissipated internal to the low drop out linear regulator is the sum of the power dissipation within the linear pass device (P-Channel MOSFET), and the quiescent current required to bias the internal reference and error amplifier. The internal linear pass device power dissipation is calculated multiplying the voltage across the linear device times the current through the device. The input and output voltages are negative for the TC59. The power dissipation is calculated using the absolute value of the voltage difference between the input and output voltage. EQUATION 4-4: PMAX = (V IN (MAX) – VOUT (MIN)) X IOUT (MAX) TABLE 4-1: MAXIMUM POWER DISSIPATION Maximum Power Dissipation 150mW For example, given the following conditions: VIN VOUT IOUT PMAX PMAX = -7.0V ±5% = -5.0V ±2% = 1mA to 40mA = (7V X (1.05) – (5.0V X 0.98)) X 40mA = 98.0 milli-Watts Package Type SOT-23-3 TAMBIENT (MAX) = 55°C EQUATION 4-1: PD (Pass Device) = (VIN – V OUT) X IOUT The internal power dissipation as a result of the bias current for the LDO internal reference and error amplifier is calculated by multiplying the ground or quiescent current times the input voltage. To determine the junction temperature of the device, the thermal resistance from junction to air must be known. The SOT-23-3 RθJA is estimated to be approximately 359°C/W when mounted on a 4-layer board. The RθJA will vary with physical layout, airflow and other application specific conditions. The device junction temperature is determined by calculating the junction temperature rise above ambient, then adding the rise to the ambient temperature. EQUATION 4-2: PD (Bias) = VIN X IGND The total internal power dissipation is the sum of Equation 4-1 and Equation 4-2. EQUATION 4-5: JUNCTION TEMPERATURE (SOT-23 EXAMPLE) TJUNCTION = PD (MAX) X RθJA + TAMBIENT TJUNCTION = 98.0 milli-Watts X 359°C/W + 55°C TJUNCTION = 90.2°C © DS21438B-page 4 2002 Microchip Technology Inc. TC59 5.0 Note: TYPICAL CHARACTERISTICS The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 1. OUTPUT VOLTAGE vs. OUTPUT CURRENT TC595002 (-5V) -5.10 VIN = -6.0V -6 TC595002 (-5V) VIN = -6.0V TOPR = -40°C -5 -4 -3 -2 -1 0 0 50 100 150 200 OUTPUT CURRENT IOUT (mA) 250 OUTPUT VOLTAGE VOUT (V) -5.05 -5.00 -4.95 -4.90 -4.85 -4.80 25°C TOPR = -40°C 80°C OUTPUT VOLTAGE VOUT (V) 25°C 80°C 0 20 40 60 80 100 OUTPUT CURRENT IOUT (mA) TC594002 (-4V) -4.10 TC594002 (-4V) -5 OUTPUT VOLTAGE VOUT (V) VIN = -5.0V VIN = -5.0V TOPR = -40°C OUTPUT VOLTAGE VOUT (V) -4.05 -4.00 -3.95 -3.90 -3.85 -3.80 0 -4 -3 25°C TOPR = -40°C 80°C 25°C -2 -1 80°C 0 0 200 50 100 150 OUTPUT CURRENT IOUT (mA) 250 20 40 60 80 100 OUTPUT CURRENT IOUT (mA) TC593002 (-3V) -3.10 TC593002 (-3V) -4 VIN = -4.0V VIN = -4.0V OUTPUT VOLTAGE VOUT (V) -3.05 OUTPUT VOLTAGE VOUT (V) TOPR = -40°C -3 TOPR = -40°C -3.00 -2.95 -2.90 -2.85 -2.80 25°C 80°C -2 25°C -1 80°C 0 0 50 200 250 100 150 OUTPUT CURRENT IOUT (mA) 0 20 40 60 80 100 OUTPUT CURRENT IOUT (mA) 2002 Microchip Technology Inc. DS21438B-page 5 © TC59 5.0 TYPICAL CHARACTERISTICS (CONTINUED) 2. OUTPUT VOLTAGE vs. INPUT VOLTAGE TC595002 (-5.0V) TOPR = 25°C -5.2 OUTPUT VOLTAGE VOUT (V) OUTPUT VOLTAGE VOUT (V) TC595002 (-5.0V) -5.10 TOPR = 25°C -5.0 IOUT = 1mA A -4.8 40mA -5.05 -5.00 IOUT = 1mA 40mA 20mA -4.6 20mA -4.95 -4.4 -4.2 -4.5 -5.0 INPUT VOLTAGE VIN (V) -5.5 -4.90 -4.85 -5 -6 -7 -8 -9 -10 INPUT VOLTAGE VIN (V) TC594002 (-4.0V) -4.2 OUTPUT VOLTAGE VOUT (V) TC594002 (-4.0V) -4.10 OUTPUT VOLTAGE VOUT (V) TOPR = 25°C TOPR = 25°C -4.0 IOUT = 1mA -3.8 20mA -3.6 40mA -3.4 -4.05 -4.00 IOUT = 1mA 40mA 20mA -3.95 -3.90 -3.2 -3.5 -3.85 -4.0 INPUT VOLTAGE VIN (V) -4.5 -4 -5 -6 -7 -8 -9 INPUT VOLTAGE VIN (V) -10 TC593002 (-3.0V) -3.2 OUTPUT VOLTAGE VOUT (V) TOPR = 25°C TC593002 (-3.0V) -3.10 OUTPUT VOLTAGE VOUT (V) TOPR = 25°C -3.0 IOUT = 1mA -2.8 -3.05 IOUT = 1mA -3.00 40mA -2.95 20mA -2.6 20mA 40mA -2.4 -2.2 -2.5 -2.90 -2.85 -3.0 INPUT VOLTAGE VIN (V) -3.5 -3 -4 -5 -6 -7 -8 -9 -10 INPUT VOLTAGE VIN (V) © DS21438B-page 6 2002 Microchip Technology Inc. TC59 5.0 TYPICAL CHARACTERISTICS (CONTINUED) 3. INPUT/OUTPUT VOLTAGE DIFFERENTIAL vs. OUTPUT CURRENT TC595002 (-5.0V) INPUT/OUTPUT VOLTAGE DIFF. VDIF (V) 800 INPUT/OUTPUT VOLTAGE DIFF. VDIF (V) 800 TC595002 (-4.0V) 600 600 400 TOPR = 25°C 200 80°C -40°C 0 0 20 40 60 100 80 IOUT (mA) 400 TOPR = 25°C 200 80°C -40°C 0 0 20 40 60 80 100 OUTPUT CURRENT IOUT (mA) TC595002 (-3.0V) INPUT/OUTPUT VOLTAGE DIFF. VDIF (V) 800 600 400 TOPR = 25°C 200 80°C -40°C 0 0 80 20 40 60 OUTPUT CURRENT IOUT (mA) 100 4. SUPPLY CURRENT vs. INPUT VOLTAGE TC595002 (-5.0V) 5 SUPPLY CURRENT ISS (µA) SUPPLY CURRENT ISS (µA) TC595002 (-5.0V) 4.0 3.5 3.0 2.5 2.0 -40°C 1.5 1.0 -10 80°C 4 TOPR = 25°C 3 80°C 2 TOPR = 25°C -40°C 1 0 0 -4 -2 -6 -8 INPUT VOLTAGE VIN (V) -5 -6 -7 -8 -9 -10 INPUT VOLTAGE VIN (V) 2002 Microchip Technology Inc. DS21438B-page 7 © TC59 5.0 TYPICAL CHARACTERISTICS (CONTINUED) 4. SUPPLY CURRENT vs. INPUT VOLTAGE (CONTINUED) TC594002 (-4.0V) 5 SUPPLY CURRENT ISS (µA) SUPPLY CURRENT ISS (µA) 4.0 3.5 3.0 TC594002 (-4.0V) 4 3 2 1 0 0 -2 -4 -6 -8 -10 INPUT VOLTAGE VIN (V) 80°C TOPR = 25°C 80°C 2.5 2.0 1.5 1.0 TOPR = 25°C -40°C -40°C -4 -5 -6 -7 -8 -9 -10 INPUT VOLTAGE VIN (V) TC593002 (-3.0V) 5 SUPPLY CURRENT ISS (µA) SUPPLY CURRENT ISS (µA) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 -3 -4 TC593002 (-3.0V) 4 3 2 80°C TOPR = 25°C 80°C TOPR = 25°C -40°C 1 0 0 -2 -4 -6 -8 -10 INPUT VOLTAGE VIN (V) -40°C -5 -6 -7 -8 -9 -10 INPUT VOLTAGE VIN (V) 5. OUTPUT VOLTAGE vs. AMBIENT TEMPERATURE TC595002 (-5.0V) OUTPUT VOLTAGE VOUT (V) TC594002 (-4.0V) -4.10 OUTPUT VOLTAGE VOUT (V) -5.10 -5.05 IOUT = 1mA -5.00 VIN = -6.0V VIN = -6.0V 20mA -4.05 IOUT = 1mA -4.00 40mA -3.95 -3.90 -3.85 -40 20mA 40mA -4.95 -4.90 -4.85 -40 -20 0 20 40 60 AMBIENT TEMP. TOPR (°C) 80 -20 0 20 40 60 80 AMBIENT TEMP. TOPR (°C) © DS21438B-page 8 2002 Microchip Technology Inc. TC59 5.0 TYPICAL CHARACTERISTICS (CONTINUED) 5. OUTPUT VOLTAGE vs. AMBIENT TEMPERATURE (CONTINUED) TC593002 (-3.0V) -3.10 VIN = -6.0V OUTPUT VOLTAGE VOUT (V) -3.05 -3.00 -2.95 -2.90 -2.85 -40 IOUT = 1mA 40mA 20mA -20 0 20 40 60 80 AMBIENT TEMP. TOPR (°C) 6. SUPPLY CURRENT vs. AMBIENT TEMPERATURE TC595002 (-5.0V) 5 5 TC594002 (-4.0V) SUPPLY CURRENT ISS (µA) SUPPLY CURRENT ISS (µA) 4 3 2 1 0 -40 4 3 2 1 0 -40 VIN = -10V -6V VIN = -10V -5V -20 0 20 40 60 AMBIENT TEMP. TOPR (°C) 80 -20 0 20 40 60 80 AMBIENT TEMP. TOPR (°C) TC593002 (-3.0V) 5 SUPPLY CURRENT ISS (µA) 4 3 VIN = -10V 2 -4V 1 0 -40 -20 0 20 40 60 80 AMBIENT TEMP. TOPR (°C) 2002 Microchip Technology Inc. DS21438B-page 9 © TC59 5.0 TYPICAL CHARACTERISTICS (CONTINUED) 7. INPUT TRANSIENT RESPONSE -8 -6 INPUT VOLTAGE VIN (V) -4 -2 0 IOUT = 1mA, CIN, CL = 1µF, TOPR = 25°C Input Voltage OUTPUT VOLTAGE VOUT (V) -8 -6 INPUT VOLTAGE VIN (V) -4 -2 0 IOUT = 50mA, CIN, CL = 1µF, TOPR = 25°C Input Voltage OUTPUT VOLTAGE VOUT (V) OUTPUT VOLTAGE VOUT (V) Output Voltage Output Voltage -6 -4 -2 0 Output Voltage Output Voltage -4 -2 0 TIME (2 msec/div) TIME (2 msec/div) -4 -2 0 Output Voltage Output Voltage -6 -4 -2 0 TIME (2 msec/div) TC594002 (-4.0V) IOUT = 1mA, CIN, CL = 1µF, TOPR = 25°C -8 OUTPUT VOLTAGE VOUT (V) -6 INPUT VOLTAGE VIN (V) -4 -2 0 Output Voltage Output Voltage -6 -4 -2 0 Input Voltage OUTPUT VOLTAGE VOUT (V) IOUT = 100mA, CIN L µF, TOPR = 25°C -8 Input Voltage -6 INPUT VOLTAGE VIN (V) TC594002 (-4.0V) IOUT = 50mA, CIN, CL = 1µF, TOPR = 25°C -8 INPUT VOLTAGE VIN(V) -6 -4 -2 0 Output Voltage Output Voltage -4 -2 0 Input Voltage TIME (2 msec/div) TIME (2 msec/div) © DS21438B-page 10 2002 Microchip Technology Inc. TC59 5.0 TYPICAL CHARACTERISTICS (CONTINUED) 7. INPUT TRANSIENT RESPONSE (CONT.) TC594002 (-4.0V) OUTPUT VOLTAGE VOUT (V) IOUT = 100mA, CIN, CL = 1µF, TOPR = 25°C -8 -6 Input Voltage -8 Input Voltage TC593002 (-3.0V) IOUT = 1mA, CIN, CL = 1µF, TOPR = 25°C -4 -2 0 Output Voltage -4 -2 0 -4 -2 0 Output Voltage -4 -2 0 TIME (2 msec/div) TIME (2 msec/div) IOUT = 50mA, CIN, CL = 1µF, TOPR = 25°C OUTPUT VOLTAGE VOUT (V) INPUT VOLTAGE VIN (V) -6 -6 Input Voltage -4 -2 0 Output Voltage Output Voltage -4 -2 0 INPUT VOLTAGE VIN (V) Input Voltage -4 -2 0 Output Voltage Output Voltage -4 -2 0 TIME (2 msec/div) TIME (2 msec/div) 2002 Microchip Technology Inc. DS21438B-page 11 OUTPUT VOLTAGE VOUT (V) -8 IOUT = 100mA, CIN, CL = 1µF, TOPR = 25°C -8 OUTPUT VOLTAGE VOUT (V) -6 INPUT VOLTAGE VIN (V) INPUT VOLTAGE VIN (V) © TC59 5.0 TYPICAL CHARACTERISTICS (CONTINUED) 8. LOAD TRANSIENT RESPONSE TC595002 (-5.0V) -6.0 OUTPUT VOLTAGE VOUT (V) VIN = -6.0V, CIN, CL = 1µF, TOPR = 25°C 250 OUTPUT CURRENT IOUT (mA) OUTPUT VOLTAGE VOUT (V) -6.0 TC595002 (-5.0V) VIN = -6.0V, CIN, CL = 1µF, TOPR = 25°C 250 OUTPUT CURRENT IOUT (mA) OUTPUT CURRENT IOUT (mA) -5.5 Output Voltage -5.0 200 -5.5 Output Voltage -5.0 200 150 150 -4.5 100 -4.5 50mA -4.0 1mA TIME (2 msec/div) Output Current 100 -4.0 1mA 10mA Output Current 50 50 -3.5 0 TIME (2 msec/div) -3.5 0 TC595002 (-5.0V) VIN = -6.0V, CIN, CL = 1µF, TOPR = 25°C -6.0 OUTPUT VOLTAGE VOUT (V) 250 OUTPUT CURRENT IOUT (mA) -5.5 Output Voltage -5.0 100mA Output Current 200 150 -4.5 100 -4.0 1mA TIME (2 msec/div) 50 -3.5 0 TC594002 (-4.0V) -6.0 OUTPUT VOLTAGE VOUT (V) VIN = -5.0V, CIN, CL = 1µF, TOPR = 25°C 250 OUTPUT CURRENT IOUT (mA) OUTPUT VOLTAGE VOUT (V) -6.0 TC594002 (-5.0V) VIN = -5.0V, CIN, CL = 1µF, TOPR = 25°C 250 -5.5 Output Voltage -5.0 200 -5.5 Output Voltage -5.0 200 150 150 -4.5 100 -4.5 50mA Output Current 100 -4.0 1mA 10mA Output Current 50 -4.0 1mA 50 -3.5 0 TIME (2 msec/div) -3.5 0 TIME (2 msec/div) © DS21438B-page 12 2002 Microchip Technology Inc. TC59 5.0 TYPICAL CHARACTERISTICS (CONTINUED) 8. LOAD TRANSIENT RESPONSE (CONT.) TC594002 (-4.0V) -6.0 OUTPUT VOLTAGE VOUT (V) VIN = -5.0V, CIN, CL = 1µF, TOPR = 25°C 250 OUTPUT CURRENT IOUT (mA) -5.5 Output Voltage -5.0 100mA -4.5 Output Current 200 150 100 -4.0 1mA TIME (2msec/div) 50 -3.5 0 TC593002 (-3.0V) -6.0 OUTPUT VOLTAGE VOUT (V) VIN = -4.0V, CIN, CL = 1µF, TOPR = 25°C 250 OUTPUT CURRENT IOUT (mA) OUTPUT VOLTAGE VOUT (V) -6.0 TC593002 (-3.0V) VIN = -4.0V, CIN, CL = 1µF, TOPR = 25°C 250 OUTPUT CURRENT IOUT (mA) -5.5 Output Voltage -5.0 200 -5.5 Output Voltage -5.0 200 150 150 -4.5 100 -4.5 50mA -4.0 1mA TIME (2 msec/div) Output Current 100 -4.0 1mA 10mA Output Current 50 50 -3.5 0 TIME (2 msec/div) -3.5 0 TC593002 (-3.0V) VIN = -4.0V, CIN, CL = 1µF, TOPR = 25°C -6.0 OUTPUT VOLTAGE VOUT (V) 250 OUTPUT CURRENT IOUT (mA) -5.5 Output Voltage -5.0 100mA -4.5 Output Current 200 150 100 -4.0 1mA TIME (2 msec/div) 50 -3.5 0 2002 Microchip Technology Inc. DS21438B-page 13 © TC59 5.0 TYPICAL CHARACTERISTICS (CONTINUED) 9. RIPPLE REJECTION RATE TC595002 (-5.0V) 60 50 40 30 20 10 0 0.01 VIN = -6.0VDC + 1VP-PAC, CL = 1µF IOUT = 20mA, TOPR = 25°C RIPPLE REJECTION RATE RR (dB) 60 50 40 30 20 10 0 0.01 TC595002 (-5.0V) VIN = -6.0VDC + 1VP-PAC, CL = 1µF IOUT = 20mA, TOPR = 25°C RIPPLE REJECTION RATE RR (dB) 0.1 1 10 0.1 1 10 RIPPLE FREQUENCY (kHz) RIPPLE FREQUENCY (kHz) TC595002 (-5.0V) 60 50 40 30 20 10 0 0.01 VIN = -6.0VDC + 1VP-PAC, CL = 1µF IOUT = 20mA, TOPR = 25°C RIPPLE REJECTION RATE RR (dB) 0.1 1 10 RIPPLE FREQUENCY (kHz) © DS21438B-page 14 2002 Microchip Technology Inc. TC59 6.0 6.1 PACKAGING INFORMATION Package Marking Information 2 represents first decimal of output voltage Symbol Voltage .0 .1 .2 .3 .4 Symbol F H K L M Voltage .5 .6 .7 .8 .9 3 A B C D E 3 1 represents first integer of output voltage Symbol 0 1 2 3 4 5 6 7 8 9 Voltage 0. 1. 2. 3. 4. 5. 6. 7. 8. 9. represents voltage polarity Symbol 5 Polarity – 4 represents assembly lot code 6.2 Taping Form Component Taping Orientation for 3-Pin SOT-23A (EIAJ SC-59) Devices User Direction of Feed Device Marking W PIN 1 P Standard Reel Component Orientation for TR Suffix Device (Mark Right Side Up) Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size 3-Pin SOT-23A 8 mm 4 mm 3000 7 in 2002 Microchip Technology Inc. DS21438B-page 15 © TC59 6.3 Package Dimensions SOT-23A-3 .020 (0.50) .012 (0.30) .118 (3.00) .098 (2.50) .071 (1.80) .055 (1.40) PIN 1 .075 (1.90) REF. .122 (3.10) .106 (2.70) .051 (1.30) .035 (0.90) .006 (0.15) .000 (0.00) 10° MAX. .022 (0.55) .014 (0.35) .010 (0.25) .004 (0.09) Dimensions: inches (mm) © DS21438B-page 16 2002 Microchip Technology Inc. TC59 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART CODE TC59 TC59 Output Voltage: 50 = -5.0V; 30 = -3.0V Tolerance: 02 = 2% Temperature/Package: -40°C to +85°C 3-Pin SOT-23A Taping Direction: TR: Standard Taping 30 50 02 02 ECB ECB XX XX Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.  2002 Microchip Technology Inc. DS21438B-page17 TC59 NOTES: DS21438B-page18  2002 Microchip Technology Inc. TC59 Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. 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Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company’s quality system processes and procedures are QS-9000 compliant for its PICmicro ® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001 certified. 2002 Microchip Technology Inc. DS21438B-page 19 © WORLDWIDE SALES AND SERVICE AMERICAS Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com ASIA/PACIFIC Australia Microchip Technology Australia Pty Ltd Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 Japan Microchip Technology Japan K.K. Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Rocky Mountain 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7966 Fax: 480-792-7456 China - Beijing Microchip Technology Consulting (Shanghai) Co., Ltd., Beijing Liaison Office Unit 915 Bei Hai Wan Tai Bldg. No. 6 Chaoyangmen Beidajie Beijing, 100027, No. China Tel: 86-10-85282100 Fax: 86-10-85282104 Korea Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea 135-882 Tel: 82-2-554-7200 Fax: 82-2-558-5934 Atlanta 500 Sugar Mill Road, Suite 200B Atlanta, GA 30350 Tel: 770-640-0034 Fax: 770-640-0307 Singapore Microchip Technology Singapore Pte Ltd. 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-6334-8870 Fax: 65-6334-8850 Boston 2 Lan Drive, Suite 120 Westford, MA 01886 Tel: 978-692-3848 Fax: 978-692-3821 China - Chengdu Microchip Technology Consulting (Shanghai) Co., Ltd., Chengdu Liaison Office Rm. 2401, 24th Floor, Ming Xing Financial Tower No. 88 TIDU Street Chengdu 610016, China Tel: 86-28-86766200 Fax: 86-28-86766599 Taiwan Microchip Technology Taiwan 11F-3, No. 207 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139 Chicago 333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 630-285-0071 Fax: 630-285-0075 Dallas 4570 Westgrove Drive, Suite 160 Addison, TX 75001 Tel: 972-818-7423 Fax: 972-818-2924 China - Fuzhou Microchip Technology Consulting (Shanghai) Co., Ltd., Fuzhou Liaison Office Unit 28F, World Trade Plaza No. 71 Wusi Road Fuzhou 350001, China Tel: 86-591-7503506 Fax: 86-591-7503521 EUROPE Denmark Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45 4420 9895 Fax: 45 4420 9910 Detroit Tri-Atria Office Building 32255 Northwestern Highway, Suite 190 Farmington Hills, MI 48334 Tel: 248-538-2250 Fax: 248-538-2260 China - Shanghai Microchip Technology Consulting (Shanghai) Co., Ltd. Room 701, Bldg. B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275-5060 Kokomo 2767 S. Albright Road Kokomo, Indiana 46902 Tel: 765-864-8360 Fax: 765-864-8387 France Microchip Technology SARL Parc d’Activite du Moulin de Massy 43 Rue du Saule Trapu Batiment A - ler Etage 91300 Massy, France Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Los Angeles 18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 949-263-1888 Fax: 949-263-1338 China - Shenzhen Microchip Technology Consulting (Shanghai) Co., Ltd., Shenzhen Liaison Office Rm. 1315, 13/F, Shenzhen Kerry Centre, Renminnan Lu Shenzhen 518001, China Tel: 86-755-2350361 Fax: 86-755-2366086 New York 150 Motor Parkway, Suite 202 Hauppauge, NY 11788 Tel: 631-273-5305 Fax: 631-273-5335 Germany Microchip Technology GmbH Gustav-Heinemann Ring 125 D-81739 Munich, Germany Tel: 49-89-627-144 0 Fax: 49-89-627-144-44 San Jose Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955 China - Hong Kong SAR Microchip Technology Hongkong Ltd. Unit 901-6, Tower 2, Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 Italy Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1 20041 Agrate Brianza Milan, Italy Tel: 39-039-65791-1 Fax: 39-039-6899883 Toronto 6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509 India Microchip Technology Inc. India Liaison Office Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, O’Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062 United Kingdom Microchip Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820 05/01/02 © DS21438B-page 20 2002 Microchip Technology Inc. *B83412SD*