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MT41K64M16TW-125:J

MT41K64M16TW-125:J

  • 厂商:

    MICRON(镁光)

  • 封装:

    96-TFBGA

  • 描述:

    IC DRAM 1G PARALLEL 800MHZ

  • 数据手册
  • 价格&库存
MT41K64M16TW-125:J 数据手册
1Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K256M4 – 32 Meg x 4 x 8 banks MT41K128M8 – 16 Meg x 8 x 8 banks MT41K64M16 – 8 Meg x 16 x 8 banks • Write leveling • Multipurpose register • Output driver calibration Description The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode. Options1 Features • • • • • • • • • • • • • • • • Marking • Configuration – 256 Meg x 4 – 128 Meg x 8 – 64 Meg x 16 • FBGA package (Pb-free) – x4, x8 – 78-ball FBGA (8mm x 11.5mm) Rev. G – 78-ball FBGA (8mm x 10.5mm) Rev. J • FBGA package (Pb-free) – x16 – 96-ball FBGA (8mm x 14mm) Rev. G – 96-ball FBGA (8mm x 14mm) Rev. J • Timing – cycle time – 1.07ns @ CL = 13 (DDR3-1866) – 1.25ns @ CL = 11 (DDR3-1600) – 1.5ns @ CL = 9 (DDR3-1333) – 1.87ns @ CL = 7 (DDR3-1066) • Operating temperature – Commercial (0°C ≤ T C ≤ +95°C) – Industrial (–40°C ≤ T C ≤ +95°C) • Revision VDD = V DDQ = +1.35V (1.283V to 1.45V) Backward compatible to V DD = V DDQ = 1.5V ±0.075V Differential bidirectional data strobe 8n-bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals Programmable CAS (READ) latency (CL) Programmable CAS additive latency (AL) Programmable CAS (WRITE) latency (CWL) Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) Selectable BC4 or BL8 on-the-fly (OTF) Self refresh mode TC of 0°C to 95°C – 64ms, 8192-cycle refresh at 0°C to 85°C – 32ms at 85°C to 95°C Self refresh temperature (SRT) Automatic self refresh (ASR) Note: 256M4 128M8 64M16 JP DA JT TW -107 -125 -15E -187E None IT :G / :J 1. Not all options listed can be combined to define an offered product. Use the part catalog search on http://www.micron.com for available offerings. Table 1: Key Timing Parameters Speed Grade Data Rate (MT/s) Target tRCD-tRP-CL -1071, 2, 3 1866 13-13-13 13.91 13.91 13.91 -1251, 2 1600 11-11-11 13.75 13.75 13.75 -15E1 1333 9-9-9 13.5 13.5 13.5 187E 1066 7-7-7 13.1 13.1 13.1 Notes: tRCD (ns) tRP (ns) CL (ns) 1. Backward compatible to 1066, CL = 7 (-187E). 2. Backward compatible to 1333, CL = 9 (-15E). 3. Backward compatible to 1600, CL = 11 (-125). PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 1Gb: x4, x8, x16 DDR3L SDRAM Description Table 2: Addressing Parameter 256 Meg x 4 128 Meg x 8 64 Meg x 16 Configuration 32 Meg x 4 x 8 banks 16 Meg x 8 x 8 banks 8 Meg x 16 x 8 banks Refresh count 8K 8K 8K 16K A[13:0] 16K A[13:0] 8K A[12:0] Row address Bank address Column address Page Size 8 BA[2:0] 8 BA[2:0] 8 BA[2:0] 2K A[11, 9:0] 1K A[9:0] 1K A[9:0] 1KB 1KB 2KB Figure 1: DDR3 Part Numbers Example Part Number: MT41K256M4DA-125:J Configuration Package Speed Revision { MT41K : :G / :J Revision Temperature Configuration 256 Meg x 4 256M4 Commercial 128 Meg x 8 128M8 Industrial temperature 64 Meg x 16 64M16 78-ball 8mm x 11.5mm FBGA G JP -107 Speed Grade tCK = 1.07ns, CL = 13 96-ball 8mm x 14mm FBGA G JT -125 tCK = 1.25ns, CL = 11 78-ball 8mm x 10.5mm FBGA J DA -15E tCK = 1.5ns, CL = 9 96-ball 8mm x 14mm FBGA J TW -187E tCK = 1.87ns, CL = 7 Package Note: Rev. Mark None IT 1. Not all options listed can be combined to define an offered product. Use the part catalog search on http://www.micron.com for available offerings. PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Description Contents State Diagram ................................................................................................................................................ 11 Functional Description ................................................................................................................................... 12 Industrial Temperature ............................................................................................................................... 12 General Notes ............................................................................................................................................ 12 Functional Block Diagrams ............................................................................................................................. 14 Ball Assignments and Descriptions ................................................................................................................. 16 Package Dimensions ....................................................................................................................................... 22 Electrical Specifications .................................................................................................................................. 26 Absolute Ratings ......................................................................................................................................... 26 Input/Output Capacitance .......................................................................................................................... 27 Thermal Characteristics .................................................................................................................................. 28 Electrical Specifications – IDD Specifications and Conditions ............................................................................ 29 Electrical Characteristics – IDD Specifications .................................................................................................. 40 Electrical Specifications – DC and AC .............................................................................................................. 44 DC Operating Conditions ........................................................................................................................... 44 Input Operating Conditions ........................................................................................................................ 45 DDR3L 1.35V AC Overshoot/Undershoot Specification ................................................................................ 49 DDR3L 1.35V Slew Rate Definitions for Single-Ended Input Signals .............................................................. 52 DDR3L 1.35V Slew Rate Definitions for Differential Input Signals ................................................................. 54 ODT Characteristics ....................................................................................................................................... 55 1.35V ODT Resistors ................................................................................................................................... 56 ODT Sensitivity .......................................................................................................................................... 57 ODT Timing Definitions ............................................................................................................................. 57 Output Driver Impedance ............................................................................................................................... 61 34 Ohm Output Driver Impedance .............................................................................................................. 62 DDR3L 34 Ohm Driver ................................................................................................................................ 63 DDR3L 34 Ohm Output Driver Sensitivity .................................................................................................... 64 DDR3L Alternative 40 Ohm Driver ............................................................................................................... 65 DDR3L 40 Ohm Output Driver Sensitivity .................................................................................................... 65 Output Characteristics and Operating Conditions ............................................................................................ 67 Reference Output Load ............................................................................................................................... 70 Slew Rate Definitions for Single-Ended Output Signals ................................................................................. 70 Slew Rate Definitions for Differential Output Signals .................................................................................... 72 Speed Bin Tables ............................................................................................................................................ 73 Electrical Characteristics and AC Operating Conditions ................................................................................... 77 Command and Address Setup, Hold, and Derating ........................................................................................... 95 Data Setup, Hold, and Derating ...................................................................................................................... 102 Commands – Truth Tables ............................................................................................................................. 110 Commands ................................................................................................................................................... 113 DESELECT ................................................................................................................................................ 113 NO OPERATION ........................................................................................................................................ 113 ZQ CALIBRATION LONG ........................................................................................................................... 113 ZQ CALIBRATION SHORT .......................................................................................................................... 113 ACTIVATE ................................................................................................................................................. 113 READ ........................................................................................................................................................ 113 WRITE ...................................................................................................................................................... 114 PRECHARGE ............................................................................................................................................. 115 REFRESH .................................................................................................................................................. 115 SELF REFRESH .......................................................................................................................................... 116 DLL Disable Mode ..................................................................................................................................... 117 PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Description Input Clock Frequency Change ...................................................................................................................... 121 Write Leveling ............................................................................................................................................... 123 Write Leveling Procedure ........................................................................................................................... 125 Write Leveling Mode Exit Procedure ........................................................................................................... 127 Initialization ................................................................................................................................................. 128 Voltage Initialization / Change ....................................................................................................................... 130 VDD Voltage Switching ............................................................................................................................... 131 Mode Registers .............................................................................................................................................. 132 Mode Register 0 (MR0) ................................................................................................................................... 133 Burst Length ............................................................................................................................................. 133 Burst Type ................................................................................................................................................. 134 DLL RESET ................................................................................................................................................ 135 Write Recovery .......................................................................................................................................... 135 Precharge Power-Down (Precharge PD) ...................................................................................................... 136 CAS Latency (CL) ....................................................................................................................................... 136 Mode Register 1 (MR1) ................................................................................................................................... 137 DLL Enable/DLL Disable ........................................................................................................................... 137 Output Drive Strength ............................................................................................................................... 138 OUTPUT ENABLE/DISABLE ...................................................................................................................... 138 TDQS Enable ............................................................................................................................................. 138 On-Die Termination .................................................................................................................................. 139 WRITE LEVELING ..................................................................................................................................... 139 POSTED CAS ADDITIVE Latency ................................................................................................................ 139 Mode Register 2 (MR2) ................................................................................................................................... 140 CAS WRITE Latency (CWL) ........................................................................................................................ 141 AUTO SELF REFRESH (ASR) ....................................................................................................................... 141 SELF REFRESH TEMPERATURE (SRT) ........................................................................................................ 142 SRT vs. ASR ............................................................................................................................................... 142 DYNAMIC ODT ......................................................................................................................................... 142 Mode Register 3 (MR3) ................................................................................................................................... 143 MULTIPURPOSE REGISTER (MPR) ............................................................................................................ 143 MPR Functional Description ...................................................................................................................... 144 MPR Register Address Definitions and Bursting Order ................................................................................. 145 MPR Read Predefined Pattern .................................................................................................................... 151 MODE REGISTER SET (MRS) Command ........................................................................................................ 151 ZQ CALIBRATION Operation ......................................................................................................................... 152 ACTIVATE Operation ..................................................................................................................................... 153 READ Operation ............................................................................................................................................ 155 WRITE Operation .......................................................................................................................................... 166 DQ Input Timing ....................................................................................................................................... 174 PRECHARGE Operation ................................................................................................................................. 176 SELF REFRESH Operation .............................................................................................................................. 176 Extended Temperature Usage ........................................................................................................................ 178 Power-Down Mode ........................................................................................................................................ 179 RESET Operation ........................................................................................................................................... 187 On-Die Termination (ODT) ............................................................................................................................ 189 Functional Representation of ODT ............................................................................................................. 189 Nominal ODT ............................................................................................................................................ 189 Dynamic ODT ............................................................................................................................................... 191 Dynamic ODT Special Use Case ................................................................................................................. 191 Functional Description .............................................................................................................................. 191 Synchronous ODT Mode ................................................................................................................................ 197 PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Description ODT Latency and Posted ODT .................................................................................................................... 197 Timing Parameters .................................................................................................................................... 197 ODT Off During READs .............................................................................................................................. 200 Asynchronous ODT Mode .............................................................................................................................. 202 Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry) .................................................. 204 Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit) ........................................................ 206 Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse) ...................................................... 208 PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Description List of Figures Figure 1: DDR3 Part Numbers .......................................................................................................................... 2 Figure 2: Simplified State Diagram ................................................................................................................. 11 Figure 3: 256 Meg x 4 Functional Block Diagram ............................................................................................. 14 Figure 4: 128 Meg x 8 Functional Block Diagram ............................................................................................. 15 Figure 5: 64 Meg x 16 Functional Block Diagram ............................................................................................. 15 Figure 6: 78-Ball FBGA – x4, x8 Ball Assignments (Top View) ........................................................................... 16 Figure 7: 96-Ball FBGA – x16 Ball Assignments (Top View) ............................................................................... 17 Figure 8: 78-Ball FBGA – x4, x8 (JP) ................................................................................................................ 22 Figure 9: 78-Ball FBGA – x4, x8 (DA) ............................................................................................................... 23 Figure 10: 96-Ball FBGA – x16 (JT) .................................................................................................................. 24 Figure 11: 96-Ball FBGA – x16 (TW) ................................................................................................................ 25 Figure 12: Thermal Measurement Point ......................................................................................................... 28 Figure 13: DDR3L 1.35V Input Signal .............................................................................................................. 48 Figure 14: Overshoot ..................................................................................................................................... 49 Figure 15: Undershoot ................................................................................................................................... 49 Figure 16: V IX for Differential Signals .............................................................................................................. 50 Figure 17: Single-Ended Requirements for Differential Signals ........................................................................ 50 Figure 18: Definition of Differential AC-Swing and tDVAC ............................................................................... 51 Figure 19: Nominal Slew Rate Definition for Single-Ended Input Signals .......................................................... 53 Figure 20: DDR3L 1.35V Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK# .............. 54 Figure 21: ODT Levels and I-V Characteristics ................................................................................................ 55 Figure 22: ODT Timing Reference Load .......................................................................................................... 58 Figure 23: tAON and tAOF Definitions ............................................................................................................ 59 Figure 24: tAONPD and tAOFPD Definitions ................................................................................................... 59 Figure 25: tADC Definition ............................................................................................................................. 60 Figure 26: Output Driver ................................................................................................................................ 61 Figure 27: DQ Output Signal .......................................................................................................................... 68 Figure 28: Differential Output Signal .............................................................................................................. 69 Figure 29: Reference Output Load for AC Timing and Output Slew Rate ........................................................... 70 Figure 30: Nominal Slew Rate Definition for Single-Ended Output Signals ....................................................... 71 Figure 31: Nominal Differential Output Slew Rate Definition for DQS, DQS# .................................................... 72 Figure 32: Nominal Slew Rate and tVAC for tIS (Command and Address – Clock) .............................................. 98 Figure 33: Nominal Slew Rate for tIH (Command and Address – Clock) ............................................................ 99 Figure 34: Tangent Line for tIS (Command and Address – Clock) .................................................................... 100 Figure 35: Tangent Line for tIH (Command and Address – Clock) .................................................................... 101 Figure 36: Nominal Slew Rate and tVAC for tDS (DQ – Strobe) ......................................................................... 106 Figure 37: Nominal Slew Rate for tDH (DQ – Strobe) ...................................................................................... 107 Figure 38: Tangent Line for tDS (DQ – Strobe) ................................................................................................ 108 Figure 39: Tangent Line for tDH (DQ – Strobe) ............................................................................................... 109 Figure 40: Refresh Mode ............................................................................................................................... 116 Figure 41: DLL Enable Mode to DLL Disable Mode ........................................................................................ 118 Figure 42: DLL Disable Mode to DLL Enable Mode ........................................................................................ 119 Figure 43: DLL Disable tDQSCK .................................................................................................................... 120 Figure 44: Change Frequency During Precharge Power-Down ........................................................................ 122 Figure 45: Write Leveling Concept ................................................................................................................. 123 Figure 46: Write Leveling Sequence ............................................................................................................... 126 Figure 47: Write Leveling Exit Procedure ....................................................................................................... 127 Figure 48: Initialization Sequence ................................................................................................................. 129 Figure 49: V DD Voltage Switching .................................................................................................................. 131 Figure 50: MRS to MRS Command Timing ( tMRD) ......................................................................................... 132 PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Description Figure 51: MRS to nonMRS Command Timing ( tMOD) .................................................................................. 133 Figure 52: Mode Register 0 (MR0) Definitions ................................................................................................ 134 Figure 53: READ Latency .............................................................................................................................. 136 Figure 54: Mode Register 1 (MR1) Definition ................................................................................................. 137 Figure 55: READ Latency (AL = 5, CL = 6) ....................................................................................................... 140 Figure 56: Mode Register 2 (MR2) Definition ................................................................................................. 141 Figure 57: CAS WRITE Latency ...................................................................................................................... 141 Figure 58: Mode Register 3 (MR3) Definition ................................................................................................. 143 Figure 59: Multipurpose Register (MPR) Block Diagram ................................................................................. 144 Figure 60: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout ..................................... 147 Figure 61: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout .......................... 148 Figure 62: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble .................................... 149 Figure 63: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble .................................... 150 Figure 64: ZQ CALIBRATION Timing (ZQCL and ZQCS) ................................................................................. 152 Figure 65: Example: Meeting tRRD (MIN) and tRCD (MIN) ............................................................................. 153 Figure 66: Example: tFAW ............................................................................................................................. 154 Figure 67: READ Latency .............................................................................................................................. 155 Figure 68: Consecutive READ Bursts (BL8) .................................................................................................... 157 Figure 69: Consecutive READ Bursts (BC4) .................................................................................................... 157 Figure 70: Nonconsecutive READ Bursts ....................................................................................................... 158 Figure 71: READ (BL8) to WRITE (BL8) .......................................................................................................... 158 Figure 72: READ (BC4) to WRITE (BC4) OTF .................................................................................................. 159 Figure 73: READ to PRECHARGE (BL8) .......................................................................................................... 159 Figure 74: READ to PRECHARGE (BC4) ......................................................................................................... 160 Figure 75: READ to PRECHARGE (AL = 5, CL = 6) ........................................................................................... 160 Figure 76: READ with Auto Precharge (AL = 4, CL = 6) ..................................................................................... 160 Figure 77: Data Output Timing – tDQSQ and Data Valid Window .................................................................... 162 Figure 78: Data Strobe Timing – READs ......................................................................................................... 163 Figure 79: Method for Calculating tLZ and tHZ ............................................................................................... 164 Figure 80: tRPRE Timing ............................................................................................................................... 164 Figure 81: tRPST Timing ............................................................................................................................... 165 Figure 82: tWPRE Timing .............................................................................................................................. 167 Figure 83: tWPST Timing .............................................................................................................................. 167 Figure 84: WRITE Burst ................................................................................................................................ 168 Figure 85: Consecutive WRITE (BL8) to WRITE (BL8) ..................................................................................... 169 Figure 86: Consecutive WRITE (BC4) to WRITE (BC4) via OTF ........................................................................ 169 Figure 87: Nonconsecutive WRITE to WRITE ................................................................................................. 170 Figure 88: WRITE (BL8) to READ (BL8) .......................................................................................................... 170 Figure 89: WRITE to READ (BC4 Mode Register Setting) ................................................................................. 171 Figure 90: WRITE (BC4 OTF) to READ (BC4 OTF) ........................................................................................... 172 Figure 91: WRITE (BL8) to PRECHARGE ........................................................................................................ 173 Figure 92: WRITE (BC4 Mode Register Setting) to PRECHARGE ...................................................................... 173 Figure 93: WRITE (BC4 OTF) to PRECHARGE ................................................................................................ 174 Figure 94: Data Input Timing ........................................................................................................................ 175 Figure 95: Self Refresh Entry/Exit Timing ...................................................................................................... 177 Figure 96: Active Power-Down Entry and Exit ................................................................................................ 181 Figure 97: Precharge Power-Down (Fast-Exit Mode) Entry and Exit ................................................................. 181 Figure 98: Precharge Power-Down (Slow-Exit Mode) Entry and Exit ................................................................ 182 Figure 99: Power-Down Entry After READ or READ with Auto Precharge (RDAP) ............................................. 182 Figure 100: Power-Down Entry After WRITE .................................................................................................. 183 Figure 101: Power-Down Entry After WRITE with Auto Precharge (WRAP) ...................................................... 183 Figure 102: REFRESH to Power-Down Entry .................................................................................................. 184 PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Description Figure 103: Figure 104: Figure 105: Figure 106: Figure 107: Figure 108: Figure 109: Figure 110: Figure 111: Figure 112: Figure 113: Figure 114: Figure 115: Figure 116: Figure 117: Figure 118: Figure 119: Figure 120: Figure 121: ACTIVATE to Power-Down Entry ................................................................................................. 184 PRECHARGE to Power-Down Entry ............................................................................................. 185 MRS Command to Power-Down Entry ......................................................................................... 185 Power-Down Exit to Refresh to Power-Down Entry ....................................................................... 186 RESET Sequence ......................................................................................................................... 188 On-Die Termination ................................................................................................................... 189 Dynamic ODT: ODT Asserted Before and After the WRITE, BC4 .................................................... 194 Dynamic ODT: Without WRITE Command .................................................................................. 194 Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8 ............ 195 Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4 .......................... 196 Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4 .......................... 196 Synchronous ODT ...................................................................................................................... 198 Synchronous ODT (BC4) ............................................................................................................. 199 ODT During READs .................................................................................................................... 201 Asynchronous ODT Timing with Fast ODT Transition .................................................................. 203 Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry ............ 205 Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit ............... 207 Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping ..................... 209 Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping ................... 209 PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Description List of Tables Table 1: Key Timing Parameters ....................................................................................................................... 1 Table 2: Addressing ......................................................................................................................................... 2 Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions .............................................................................................. 18 Table 4: 96-Ball FBGA – x16 Ball Descriptions ................................................................................................. 20 Table 5: Absolute Maximum Ratings .............................................................................................................. 26 Table 6: DDR3L Input/Output Capacitance .................................................................................................... 27 Table 7: Thermal Characteristics .................................................................................................................... 28 Table 8: DDR3L Timing Parameters Used for I DD Measurements – Clock Units ................................................. 29 Table 9: DDR3L IDD0 Measurement Loop ........................................................................................................ 30 Table 10: DDR3L IDD1 Measurement Loop ...................................................................................................... 31 Table 11: DDR3L IDD Measurement Conditions for Power-Down Currents ....................................................... 32 Table 12: DDR3L IDD2N and IDD3N Measurement Loop .................................................................................... 33 Table 13: DDR3L IDD2NT Measurement Loop .................................................................................................. 33 Table 14: DDR3L IDD4R Measurement Loop .................................................................................................... 34 Table 15: DDR3L IDD4W Measurement Loop .................................................................................................... 35 Table 16: DDR3L IDD5B Measurement Loop .................................................................................................... 36 Table 17: DDR3L IDD Measurement Conditions for IDD6, IDD6ET, and IDD8 ........................................................ 37 Table 18: DDR3L IDD7 Measurement Loop ...................................................................................................... 38 Table 19: IDD Maximum Limits – Rev. G .......................................................................................................... 40 Table 20: IDD Maximum Limits – Rev. J ........................................................................................................... 42 Table 21: DDR3L 1.35V DC Electrical Characteristics and Operating Conditions .............................................. 44 Table 22: DDR3L 1.35V DC Electrical Characteristics and Input Conditions ..................................................... 45 Table 23: DDR3L 1.35V Input Switching Conditions - Command and Address .................................................. 46 Table 24: DDR3L 1.35V Differential Input Operating Conditions (CK, CK# and DQS, DQS#) .............................. 47 Table 25: DDR3L Control and Address Pins ..................................................................................................... 49 Table 26: DDR3L 1.35V Clock, Data, Strobe, and Mask Pins ............................................................................. 49 Table 27: DDR3L 1.35V - Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC Ringback ... 51 Table 28: Single-Ended Input Slew Rate Definition .......................................................................................... 52 Table 29: DDR3L 1.35V Differential Input Slew Rate Definition ........................................................................ 54 Table 30: On-Die Termination DC Electrical Characteristics ............................................................................ 55 Table 31: 1.35V RTT Effective Impedance ........................................................................................................ 56 Table 32: ODT Sensitivity Definition .............................................................................................................. 57 Table 33: ODT Temperature and Voltage Sensitivity ........................................................................................ 57 Table 34: ODT Timing Definitions .................................................................................................................. 58 Table 35: DDR3L(1.35V) Reference Settings for ODT Timing Measurements .................................................... 58 Table 36: DDR3L 34 Ohm Driver Impedance Characteristics ........................................................................... 62 Table 37: DDR3L 34 Ohm Driver Pull-Up and Pull-Down Impedance Calculations ........................................... 63 Table 38: DDR3L 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = DDR3L@1.35V ..................................... 63 Table 39: DDR3L 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = DDR3L@1.45V ..................................... 63 Table 40: DDR3L 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = DDR3L@1.283 ..................................... 64 Table 41: DDR3L 34 Ohm Output Driver Sensitivity Definition ........................................................................ 64 Table 42: DDR3L 34 Ohm Output Driver Voltage and Temperature Sensitivity .................................................. 64 Table 43: DDR3L 40 Ohm Driver Impedance Characteristics ........................................................................... 65 Table 44: DDR3L 40 Ohm Output Driver Sensitivity Definition ........................................................................ 65 Table 45: 40 Ohm Output Driver Voltage and Temperature Sensitivity .............................................................. 66 Table 46: DDR3L Single-Ended Output Driver Characteristics ......................................................................... 67 Table 47: DDR3L Differential Output Driver Characteristics ............................................................................ 68 Table 48: DDR3L Differential Output Driver Characteristics V OX(AC) ................................................................. 69 Table 49: Single-Ended Output Slew Rate Definition ....................................................................................... 70 Table 50: Differential Output Slew Rate Definition .......................................................................................... 72 PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Description Table 51: Table 52: Table 53: Table 54: Table 55: Table 56: Table 57: Table 58: Table 59: Table 60: Table 61: Table 62: Table 63: Table 64: Table 65: Table 66: Table 67: Table 68: Table 69: Table 70: Table 71: Table 72: Table 73: Table 74: Table 75: Table 76: Table 77: Table 78: Table 79: Table 80: Table 81: Table 82: Table 83: Table 84: Table 85: Table 86: Table 87: Table 88: Table 89: DDR3L-1066 Speed Bins .................................................................................................................. 73 DDR3L-1333 Speed Bins .................................................................................................................. 74 DDR3L-1600 Speed Bins .................................................................................................................. 75 DDR3L-1866 Speed Bins .................................................................................................................. 76 Electrical Characteristics and AC Operating Conditions .................................................................... 77 Electrical Characteristics and AC Operating Conditions for Speed Extensions .................................... 87 DDR3L Command and Address Setup and Hold Values 1 V/ns Referenced – AC/DC-Based ................ 96 DDR3L-800/1066/1333/1600 Derating Values tIS/tIH – AC160/DC90-Based ...................................... 96 DDR3L-800/1066/1333/1600 Derating Values for tIS/tIH – AC135/DC90-Based ................................. 96 DDR3L-1866 Derating Values for tIS/tIH – AC125/DC90-Based ......................................................... 97 DDR3L Minimum Required Time tVAC Above V IH(AC) (Below V IL[AC]) for Valid ADD/CMD Transition .. 97 DDR3L Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) – AC/DC-Based ....................... 103 DDR3L Derating Values for tDS/tDH – AC160/DC90-Based .............................................................. 103 DDR3L Derating Values for tDS/tDH – AC135/DC100-Based ............................................................ 103 DDR3L Derating Values for tDS/tDH – AC130/DC100-Based at 2V/ns ............................................... 104 DDR3L Minimum Required Time tVAC Above V IH(AC) (Below V IL(AC)) for Valid DQ Transition ............. 105 Truth Table – Command ................................................................................................................. 110 Truth Table – CKE .......................................................................................................................... 112 READ Command Summary ............................................................................................................ 114 WRITE Command Summary .......................................................................................................... 114 READ Electrical Characteristics, DLL Disable Mode ......................................................................... 120 Write Leveling Matrix ..................................................................................................................... 124 Burst Order .................................................................................................................................... 135 MPR Functional Description of MR3 Bits ........................................................................................ 144 MPR Readouts and Burst Order Bit Mapping ................................................................................... 145 Self Refresh Temperature and Auto Self Refresh Description ............................................................ 178 Self Refresh Mode Summary ........................................................................................................... 178 Command to Power-Down Entry Parameters .................................................................................. 179 Power-Down Modes ....................................................................................................................... 180 Truth Table – ODT (Nominal) ......................................................................................................... 190 ODT Parameters ............................................................................................................................ 190 Write Leveling with Dynamic ODT Special Case .............................................................................. 191 Dynamic ODT Specific Parameters ................................................................................................. 192 Mode Registers for RTT,nom ............................................................................................................. 192 Mode Registers for RTT(WR) ............................................................................................................. 193 Timing Diagrams for Dynamic ODT ................................................................................................ 193 Synchronous ODT Parameters ........................................................................................................ 198 Asynchronous ODT Timing Parameters for All Speed Bins ............................................................... 203 ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period ................................... 205 PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM State Diagram State Diagram Figure 2: Simplified State Diagram CKE L Power applied Power on MRS, MPR, write leveling Initialization Reset procedure Self refresh SRE ZQCL From any state RESET ZQ calibration MRS SRX REF ZQCL/ZQCS Refreshing Idle PDE ACT PDX Active powerdown Precharge powerdown Activating PDX CKE L CKE L PDE Bank active WRITE WRITE READ WRITE AP Writing READ READ AP READ WRITE WRITE AP Reading READ AP WRITE AP READ AP PRE, PREA Writing PRE, PREA PRE, PREA Reading Precharging Automatic sequence Command sequence ACT = ACTIVATE MPR = Multipurpose register MRS = Mode register set PDE = Power-down entry PDX = Power-down exit PRE = PRECHARGE PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 PREA = PRECHARGE ALL READ = RD, RDS4, RDS8 READ AP = RDAP, RDAPS4, RDAPS8 REF = REFRESH RESET = START RESET PROCEDURE SRE = Self refresh entry 11 SRX = Self refresh exit WRITE = WR, WRS4, WRS8 WRITE AP = WRAP, WRAPS4, WRAPS8 ZQCL = ZQ LONG CALIBRATION ZQCS = ZQ SHORT CALIBRATION Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Functional Description Functional Description DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clockcycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, onehalf-clock-cycle data transfers at the I/O pins. The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the data strobes. The DDR3 SDRAM operates from a differential clock (CK and CK#). The crossing of CK going HIGH and CK# going LOW is referred to as the positive edge of CK. Control, command, and address signals are registered at every positive edge of CK. Input data is registered on the first rising edge of DQS after the WRITE preamble, and output data is referenced on the first rising edge of DQS after the READ preamble. Read and write accesses to the DDR3 SDRAM are burst-oriented. Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVATE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVATE command are used to select the bank and row to be accessed. The address bits registered coincident with the READ or WRITE commands are used to select the bank and the starting column location for the burst access. The device uses a READ and WRITE BL8 and BC4. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access. As with standard DDR SDRAM, the pipelined, multibank architecture of DDR3 SDRAM allows for concurrent operation, thereby providing high bandwidth by hiding row precharge and activation time. A self refresh mode is provided, along with a power-saving, power-down mode. Industrial Temperature The industrial temperature (IT) device requires that the case temperature not exceed –40°C or 95°C. JEDEC specifications require the refresh rate to double when T C exceeds 85°C; this also requires use of the high-temperature self refresh option. Additionally, ODT resistance and the input/output impedance must be derated when T C is < 0°C or >95°C. General Notes • The functionality and the timing specifications discussed in this data sheet are for the DLL enable mode of operation (normal operation). • Throughout this data sheet, various figures and text refer to DQs as “DQ.” DQ is to be interpreted as any and all DQ collectively, unless specifically stated otherwise. • The terms “DQS” and “CK” found throughout this data sheet are to be interpreted as DQS, DQS# and CK, CK# respectively, unless specifically stated otherwise. PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Functional Description • Complete functionality may be described throughout the document; any page or diagram may have been simplified to convey a topic and may not be inclusive of all requirements. • Any specific requirement takes precedence over a general statement. • Any functionality not specifically stated is considered undefined, illegal, and not supported, and can result in unknown operation. • Row addressing is denoted as A[n:0]. For example, 1Gb: n = 12 (x16); 1Gb: n = 13 (x4, x8); 2Gb: n = 13 (x16) and 2Gb: n = 14 (x4, x8); 4Gb: n = 14 (x16); and 4Gb: n = 15 (x4, x8). • Dynamic ODT has a special use case: when DDR3 devices are architected for use in a single rank memory array, the ODT ball can be wired HIGH rather than routed. Refer to the Dynamic ODT Special Use Case section. • A x16 device's DQ bus is comprised of two bytes. If only one of the bytes needs to be used, use the lower byte for data transfers and terminate the upper byte as noted: – – – – Connect UDQS to ground via 1kΩ* resistor. Connect UDQS# to V DD via 1kΩ* resistor. Connect UDM to V DD via 1kΩ* resistor. Connect DQ[15:8] individually to either V SS, V DD, or V REF via 1kΩ resistors,* or float DQ[15:8]. *If ODT is used, 1kΩ resistor should be changed to 4x that of the selected ODT. PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Functional Block Diagrams Functional Block Diagrams DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally configured as an 8-bank DRAM. Figure 3: 256 Meg x 4 Functional Block Diagram ODT control ODT ZQ RZQ ZQCL, ZQCS CKE VSSQ To pull-up/pull-down networks ZQ CAL RESET# Control logic A12 CK, CK# VDDQ/2 BC4 (burst chop) Command decode CS# RAS# CAS# WE# Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 OTF Mode registers Refresh counter 16 Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 14 14 Bank 0 rowaddress latch and decoder 16,384 RTT(WR) CK, CK# sw2 sw1 DLL (1 . . . 4) 14 Rowaddress MUX RTT,nom Columns 0, 1, and 2 Bank 0 memory array (16,384 x 256 x 32) 32 READ FIFO and data MUX 4 DQ[3:0] READ drivers DQ[3:0] DQS, DQS# VDDQ/2 Sense amplifiers 32 BC4 RTT,nom 8,192 BC4 OTF I/O gating DM mask logic 3 A[13:0] BA[2:0] 17 Address register 3 sw1 (1, 2) Bank control logic Columnaddress counter/ latch DQS, DQS# VDDQ/2 32 Data interface Column decoder 4 Data WRITE drivers and input logic 8 RTT,nom sw1 RTT(WR) sw2 DM 3 Columns 0, 1, and 2 CK, CK# PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 sw2 DM 256 (x32) 11 RTT(WR) 14 Column 2 (select upper or lower nibble for BC4) Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Functional Block Diagrams Figure 4: 128 Meg x 8 Functional Block Diagram ODT control ODT ZQ RZQ Control logic CKE VSSQ To ODT/output drivers ZQ CAL RESET# ZQCL, ZQCS A12 CK, CK# VDDQ/2 BC4 (burst chop) Command decode CS# RAS# CAS# WE# Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 OTF Mode registers Refresh counter Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 16 14 14 Bank 0 rowaddress 16,384 latch and decoder RTT(WR) CK, CK# sw2 sw1 DLL (1 . . . 8) 14 Rowaddress MUX RTT,nom Columns 0, 1, and 2 Bank 0 memory array (16,384 x 128 x 64) 64 DQ8 READ FIFO and data MUX 8 TDQS# DQ[7:0] READ drivers DQ[7:0] DQS, DQS# VDDQ/2 Sense amplifiers 64 BC4 8,192 17 Address register RTT(WR) sw2 sw1 I/O gating DM mask logic 3 A[13:0] BA[2:0] BC4 OTF RTT,nom (1, 2) Bank control logic 3 VDDQ/2 (128 x64) 64 Data interface Column decoder Columnaddress counter/ latch 10 DQS, DQS# 8 Data WRITE drivers and input logic RTT,nom RTT(WR) sw2 sw1 7 DM/TDQS (shared pin) 3 Columns 0, 1, and 2 CK, CK# Column 2 (select upper or lower nibble for BC4) Figure 5: 64 Meg x 16 Functional Block Diagram ODT control ODT ZQ RZQ Control logic CKE VSSQ To ODT/output drivers ZQ CAL RESET# ZQCL, ZQCS A12 VDDQ/2 CK, CK# BC4 (burst chop) Command decode CS# RAS# CAS# WE# Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 OTF Mode registers Refresh counter 16 Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 13 13 Bank 0 rowaddress latch and decoder 8,192 DLL (1 . . . 16) Bank 0 memory array (8192 x 128 x 128) 128 READ FIFO and data MUX 16 DQ[15:0] READ drivers LDQS, LDQS#, UDQS, UDQS# Address register 3 sw2 LDQS, LDQS# Bank control logic (1 . . . 4) Columnaddress counter/ latch UDQS, UDQS# VDDQ/2 128 Data interface Column decoder 16 Data WRITE drivers and input logic RTT,nom sw1 RTT(WR) sw2 7 (1, 2) LDM/UDM 3 Columns 0, 1, and 2 CK, CK# PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 RTT(WR) I/O gating DM mask logic (128 x128) 10 RTT,nom sw1 BC4 OTF 3 DQ[15:0] VDDQ/2 BC4 128 16,384 16 sw2 sw1 Sense amplifiers A[12:0] BA[2:0] RTT(WR) CK, CK# 13 Rowaddress MUX RTT,nom Column 0, 1, and 2 15 Column 2 (select upper or lower nibble for BC4) Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Ball Assignments and Descriptions Ball Assignments and Descriptions Figure 6: 78-Ball FBGA – x4, x8 Ball Assignments (Top View) 1 2 3 VSS VDD VSS VDDQ 4 5 6 7 8 9 NC NF, NF/TDQS# VSS VDD VSSQ DQ0 DM, DM/TDQS VSSQ VDDQ DQ2 DQS DQ1 DQ3 VSSQ NF, DQ6 DQS# VDD VSS VSSQ A B C D VSSQ E VREFDQ NF, DQ7 NF, DQ5 VDDQ VDDQ NF, DQ4 F NC VSS RAS# CK VSS NC ODT VDD CAS# CK# VDD CKE NC CS# WE# A10/AP ZQ NC VSS BA0 BA2 NC VREFCA VSS VDD A3 A0 A12/BC# BA1 VDD VSS A5 A2 A1 A4 VSS VDD A7 A9 A11 A6 VDD VSS RESET# A13 NC A8 VSS G H J K L M N Notes: PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 1. Ball descriptions listed in Table 3 (page 18) are listed as x4, x8 if unique; otherwise, x4 and x8 are the same. 2. A comma separates the configuration; a slash defines a selectable function. Example: D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies to the x8 configuration only—selectable between NF or TDQS# via MRS (symbols are defined in Table 3). 16 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Ball Assignments and Descriptions Figure 7: 96-Ball FBGA – x16 Ball Assignments (Top View) 1 2 3 VDDQ DQ13 VSSQ 4 5 6 7 8 9 DQ15 DQ12 VDDQ VSS VDD VSS UDQS# DQ14 VSSQ VDDQ DQ11 DQ9 UDQS DQ10 VDDQ VSSQ VDDQ UDM DQ8 VSSQ VDD VSS VSSQ DQ0 LDM VSSQ VDDQ VDDQ DQ2 LDQS DQ1 DQ3 VSSQ VSSQ DQ6 LDQS# VDD VSS VSSQ VREFDQ VDDQ DQ4 DQ7 DQ5 VDDQ NC VSS RAS# CK VSS NC ODT VDD CAS# CK# VDD CKE NC CS# WE# A10/AP ZQ NC VSS BA0 BA2 NC VREFCA VSS VDD A3 A0 A12/BC# BA1 VDD VSS A5 A2 A1 A4 VSS VDD A7 A9 A11 A6 VDD VSS RESET# NC NC A8 VSS A B C D E F G H J K L M N P R T Notes: PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 1. Ball descriptions listed in Table 3 (page 18) are listed as x16. 2. A comma separates the configuration; a slash defines a selectable function. 17 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Ball Assignments and Descriptions Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions Symbol Type Description A[9:0], A10/AP, A11, A12/BC#, A13 Input Address inputs: Provide the row address for ACTIVATE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. Address inputs are referenced to VREFCA. A12/BC#: when enabled in the mode register (MR), A12 is sampled during READ and WRITE commands to determine whether burst chop (on-the-fly) will be performed (HIGH = BL8 or no burst chop, LOW = BC4 burst chop). BA[2:0] Input Bank address inputs: BA[2:0] define to which bank an ACTIVATE, READ, WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to VREFCA. CK, CK# Input Clock: CK and CK# are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#. CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is dependent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks idle) or active power-down (row active in any bank). CKE is synchronous for power-down entry and exit and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during power-down. Input buffers (excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to VREFCA. CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external rank selection on systems with multiple ranks. CS# is considered part of the command code. CS# is referenced to VREFCA. DM Input Input data mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with the input data during a write access. Although the DM ball is input-only, the DM loading is designed to match that of the DQ and DQS balls. DM is referenced to VREFDQ. DM has an optional use as TDQS on the x8 device. ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation, ODT is only applied to each of the following balls: DQ[7:0], DQS, DQS#, and DM for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is ignored if disabled via the LOAD MODE command. ODT is referenced to VREFCA. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered and are referenced to VREFCA. RESET# Input Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × VDD and DC LOW ≤ 0.2 × VDDQ. RESET# assertion and de-assertion are asynchronous. DQ[3:0] I/O PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 Data input/output: Bidirectional data bus for the x4 configuration. DQ[3:0] are referenced to VREFDQ. 18 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Ball Assignments and Descriptions Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions (Continued) Symbol Type DQ[7:0] I/O Description Data input/output: Bidirectional data bus for the x8 configuration. DQ[7:0] are referenced to VREFDQ. DQS, DQS# I/O Data strobe: Output with read data. Edge-aligned with read data. Input with write data. Center-aligned to write data. TDQS, TDQS# I/O Termination data strobe: Applies to the x8 configuration only. When TDQS is enabled, DM is disabled, and the TDQS and TDQS# balls provide termination resistance. VDD Supply Power supply: 1.35V, 1.283V to 1.45V operational; compatible with 1.5V operation. VDDQ Supply DQ power supply: 1.35V, 1.283V to 1.45V operational; compatible with 1.5V operation. VREFCA Supply Reference voltage for control, command, and address: VREFCA must be maintained at all times (including self refresh) for proper device operation. VREFDQ Supply Reference voltage for data: VREFDQ must be maintained at all times (including self refresh) for proper device operation. VSS Supply Ground. VSSQ Supply DQ ground: Isolated on the device for improved noise immunity. ZQ Reference External reference ball for output drive calibration: This ball is tied to an external 240Ω resistor (RZQ), which is tied to VSSQ. NC – No connect: These balls should be left unconnected (the ball has no connection to the DRAM or to other balls). NF – No function: When configured as a x4 device, these balls are NF. When configured as a x8 device, these balls are defined as TDQS#, DQ[7:4]. PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 19 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Ball Assignments and Descriptions Table 4: 96-Ball FBGA – x16 Ball Descriptions Symbol Type Description A[9:0], A10/AP, A11, A12/BC# Input Address inputs: Provide the row address for ACTIVATE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. Address inputs are referenced to VREFCA. A12/BC#: when enabled in the mode register (MR), A12 is sampled during READ and WRITE commands to determine whether burst chop (on-the-fly) will be performed (HIGH = BL8 or no burst chop, LOW = BC4). BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to VREFCA. CK, CK# Input Clock: CK and CK# are differential clock inputs. All control and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#. CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is dependent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks idle) or active power-down (row active in any bank). CKE is synchronous for power-down entry and exit and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during power-down. Input buffers (excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to VREFCA. CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external rank selection on systems with multiple ranks. CS# is considered part of the command code. CS# is referenced to VREFCA. LDM Input Input data mask: LDM is a lower byte, input mask signal for write data. Lower-byte input data is masked when LDM is sampled HIGH along with the input data during a write access. Although the LDM ball is input-only, the LDM loading is designed to match that of the DQ and DQS balls. LDM is referenced to VREFDQ. ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation, ODT is only applied to each of the following balls: DQ[15:0], LDQS, LDQS#, UDQS, UDQS#, LDM, and UDM for the x16; DQ0[7:0], DQS, DQS#, DM/TDQS, and NF/ TDQS# (when TDQS is enabled) for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is ignored if disabled via the LOAD MODE command. ODT is referenced to VREFCA. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered and are referenced to VREFCA. RESET# Input Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × VDD and DC LOW ≤ 0.2 × VDDQ. RESET# assertion and de-assertion are asynchronous. PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 20 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Ball Assignments and Descriptions Table 4: 96-Ball FBGA – x16 Ball Descriptions (Continued) Symbol Type Description UDM Input Input data mask: UDM is an upper-byte, input mask signal for write data. Upperbyte input data is masked when UDM is sampled HIGH along with that input data during a WRITE access. Although the UDM ball is input-only, the UDM loading is designed to match that of the DQ and DQS balls. UDM is referenced to VREFDQ. DQ[7:0] I/O Data input/output: Lower byte of bidirectional data bus for the x16 configuration. DQ[7:0] are referenced to VREFDQ. DQ[15:8] I/O Data input/output: Upper byte of bidirectional data bus for the x16 configuration. DQ[15:8] are referenced to VREFDQ. LDQS, LDQS# I/O Lower byte data strobe: Output with read data. Edge-aligned with read data. Input with write data. Center-aligned to write data. UDQS, UDQS# I/O Upper byte data strobe: Output with read data. Edge-aligned with read data. Input with write data. DQS is center-aligned to write data. VDD Supply Power supply: 1.35V, 1.283V to 1.45V. VDDQ Supply DQ power supply: 1.35V, 1.283V to 1.45V. VREFCA Supply Reference voltage for control, command, and address: VREFCA must be maintained at all times (including self refresh) for proper device operation. VREFDQ Supply Reference voltage for data: VREFDQ must be maintained at all times (excluding self refresh) for proper device operation. VSS Supply Ground. VSSQ Supply DQ ground: Isolated on the device for improved noise immunity. ZQ Reference NC – PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 External reference ball for output drive calibration: This ball is tied to an external 240Ω resistor (RZQ), which is tied to VSSQ. No connect: These balls should be left unconnected (the ball has no connection to the DRAM or to other balls). 21 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Package Dimensions Package Dimensions Figure 8: 78-Ball FBGA – x4, x8 (JP) 0.8 ±0.1 Seating plane 0.12 A A 78X Ø0.45 Dimensions apply to solder balls postreflow on Ø0.33 NSMD ball pads. 8 ±0.15 9 8 7 3 2 Ball A1 ID 1 Ball A1 ID A B C D 0.8 TYP E F 9.6 CTR G 11.5 ±0.15 H J K L M N 0.8 TYP Notes: PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 1.2 MAX 6.4 CTR 0.25 MIN 1. All dimensions are in millimeters. 2. Material composition: Pb-free SAC305 (96.5% Sn, 3% Ag, 0.5% Cu). 22 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Package Dimensions Figure 9: 78-Ball FBGA – x4, x8 (DA) 0.155 Seating plane A 0.12 A 1.8 CTR Nonconductive overmold 78X Ø0.47 Dimensions apply to solder balls postreflow on Ø0.42 SMD ball pads. Ball A1 ID (covered by SR) 9 8 7 Ball A1 ID 3 2 1 A B C D E F G H J K L M N 10.5 ±0.1 9.6 CTR 0.8 TYP 1.1 ±0.1 0.8 TYP 6.4 CTR 0.29 MIN 8 ±0.1 Notes: PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 1. All dimensions are in millimeters. 2. Material composition: Pb-free SAC302 (96.8% Sn, 3% Ag, 0.2% Cu). 23 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Package Dimensions Figure 10: 96-Ball FBGA – x16 (JT) 0.155 Seating plane A 1.8 CTR Nonconductive overmold 96X Ø0.45 Dimensions apply to solder balls postreflow on Ø0.35 SMD ball pads. 0.12 A Ball A1 ID 9 8 7 3 2 Ball A1 ID 1 A B C D E F 14 ±0.1 G H 12 CTR J K L M N P R 0.8 TYP T 1.1 ±0.1 0.8 TYP 6.4 CTR 0.25 MIN 8 ±0.1 Notes: PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 1. All dimensions are in millimeters. 2. Material composition: Pb-free SAC305 (96.5% Sn, 3% Ag, 0.5% Cu). 24 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Package Dimensions Figure 11: 96-Ball FBGA – x16 (TW) 0.155 Seating plane 0.12 A A 1.8 CTR Nonconductive overmold 96X Ø0.47 Dimensions apply to solder balls postreflow on Ø0.42 SMD ball pads. Ball A1 ID (covered by SR) 9 8 7 Ball A1 ID 3 2 1 A B C D E F G H J K L M N P R T 14 ±0.1 12 CTR 0.8 TYP 1.1 ±0.1 0.8 TYP 6.4 CTR 0.29 MIN 8 ±0.1 Notes: PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 1. All dimensions are in millimeters. 2. Material composition: Pb-free SAC302 (96.8% Sn, 3% Ag, 0.2% Cu). 25 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications Electrical Specifications Absolute Ratings Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability. Table 5: Absolute Maximum Ratings Symbol Parameter Min Max Unit Notes 1 VDD VDD supply voltage relative to VSS –0.4 1.975 V VDDQ VDD supply voltage relative to VSSQ –0.4 1.975 V VIN, VOUT Voltage on any pin relative to VSS –0.4 1.975 V 0 95 °C 2, 3 Operating case temperature – Industrial –40 95 °C 2, 3 Storage temperature –55 150 °C TC TSTG Operating case temperature – Commercial Notes: PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 1. VDD and VDDQ must be within 300mV of each other at all times, and VREF must not be greater than 0.6 × VDDQ. When VDD and VDDQ are 85°C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B must be derated by 2%; IDD2Px must be derated by 30%. PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 41 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics – IDD Specifications Table 20: IDD Maximum Limits – Rev. J Speed Bin Parameter Symbol Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 Operating current 1: One bank ACTIVATE-to-READto-PRECHARGE IDD1 Precharge power-down current: Slow exit Width DDR3L -1066 DDR3L -1333 DDR3L -1600 DDR3L -1866 Units Notes x4,x8 32 33 34 36 mA 1, 2 x16 42 44 45 46 mA 1, 2 x4,x8 41 43 45 47 mA 1, 2 x16 56 59 61 63 mA 1, 2 IDD2P0 (slow) All 12 12 12 12 mA 1, 2 Precharge power-down current: Fast exit IDD2P1 (fast) All 12 12 12 12 mA 1, 2 Precharge quiet standby IDD2Q All 15 15 15 15 mA 1, 2 Precharge standby current IDD2N All 17 17 17 17 mA 1, 2 x4, x8 21 24 25 27 mA 1, 2 x16 22 24 26 28 mA 1, 2 Precharge standby ODT current IDD2NT Active power-down current IDD3P All 14 14 14 14 mA 1, 2 Active standby current IDD3N x4, x8 21 23 24 26 mA 1, 2 x16 23 25 26 28 mA 1, 2 IDD4R x4, x8 60 72 83 95 mA 1, 2 x16 84 102 118 135 mA 1, 2 Burst write operating cur- IDD4W rent x4, x8 66 77 88 99 mA 1, 2 x16 98 116 132 149 mA 1, 2 Burst read operating current Burst refresh current IDD5B All 155 155 160 165 mA 1, 2 Room temperature self refresh IDD6 All 12 12 12 12 mA 1, 2, 3 Extended temperature self refresh IDD6ET All 14 14 14 14 mA 1, 4 x4, x8 117 144 149 162 mA 1, 2 x16 152 172 194 219 mA 1, 2 All IDD2P0 + 2mA IDD2P0 + 2mA IDD2P0 + 2mA IDD2P0 + 2mA mA 1, 2 All banks interleaved read IDD7 current Reset current IDD8 Notes: 1. 2. 3. 4. 5. TC = 85°C; SRT and ASR are disabled. Enabling ASR could increase IDDx by up to an additional 2mA. Restricted to TC (MAX) = 85°C. TC = 85°C; ASR and ODT are disabled; SRT is enabled. The IDD values must be derated (increased) on IT-option and AT-option devices when operated outside of the range 0°C ≤ TC ≤ +85°C: 5a. When TC < 0°C: IDD2P0, IDD2P1 and IDD3P must be derated by 4%; IDD4R and IDD4W must be derated by 2%; and IDD6 and IDD7 must be derated by 7%. PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 42 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics – IDD Specifications 5b. When TC > 85°C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B must be derated by 2%; IDD2Px must be derated by 30%. PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 43 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications – DC and AC Electrical Specifications – DC and AC DC Operating Conditions Table 21: DDR3L 1.35V DC Electrical Characteristics and Operating Conditions All voltages are referenced to VSS Parameter/Condition Symbol Min Nom Max Unit Notes Supply voltage VDD 1.283 1.35 1.45 V 1–7 I/O supply voltage VDDQ 1.283 1.35 1.45 V 1–7 II –2 – 2 μA IVREF –1 – 1 μA Input leakage current Any input 0V ≤ VIN ≤ VDD, VREF pin 0V ≤ VIN ≤ 1.1V (All other pins not under test = 0V) VREF supply leakage current VREFDQ = VDD/2 or VREFCA = VDD/2 (All other pins not under test = 0V) Notes: PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 8, 9 1. VDD and VDDQ must track one another. VDDQ must be ≤ VDD. VSS = VSSQ. 2. VDD and VDDQ may include AC noise of ±50mV (250 kHz to 20 MHz) in addition to the DC (0 Hz to 250 kHz) specifications. VDD and VDDQ must be at same level for valid AC timing parameters. 3. Maximum DC value may not be greater than 1.425V. The DC value is the linear average of VDD/VDDQ(t) over a very long period of time (for example, 1 second). 4. Under these supply voltages, the device operates to this DDR3L specification. 5. If the maximum limit is exceeded, input levels shall be governed by DDR3 specifications. 6. Under 1.5V operation, this DDR3L device operates in accordance with the DDR3 specifications under the same speed timings as defined for this device. 7. Once initialized for DDR3L operation, DDR3 operation may only be used if the device is in reset while VDD and VDDQ are changed for DDR3 operation (see VDD Voltage Switching (page 131)). 8. The minimum limit requirement is for testing purposes. The leakage current on the VREF pin should be minimal. 9. VREF (see Table 22). 44 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications – DC and AC Input Operating Conditions Table 22: DDR3L 1.35V DC Electrical Characteristics and Input Conditions All voltages are referenced to VSS Parameter/Condition Symbol Min Nom Max Unit VIN low; DC/commands/address busses VIL VSS N/A See Table 23 V VIN high; DC/commands/address busses VIH See Table 23 N/A VDD V Notes Input reference voltage command/address bus VREFCA(DC) 0.49 × VDD 0.5 × VDD 0.51 × VDD V 1, 2 I/O reference voltage DQ bus VREFDQ(DC) 0.49 × VDD 0.5 × VDD 0.51 × VDD V 2, 3 I/O reference voltage DQ bus in SELF REFRESH VREFDQ(SR) VSS 0.5 × VDD VDD V 4 VTT – 0.5 × VDDQ – V 5 Command/address termination voltage (system level, not direct DRAM input) Notes: PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 1. VREFCA(DC) is expected to be approximately 0.5 × VDD and to track variations in the DC level. Externally generated peak noise (non-common mode) on VREFCA may not exceed ±1% × VDD around the VREFCA(DC) value. Peak-to-peak AC noise on VREFCA should not exceed ±2% of VREFCA(DC). 2. DC values are determined to be less than 20 MHz in frequency. DRAM must meet specifications if the DRAM induces additional AC noise greater than 20 MHz in frequency. 3. VREFDQ(DC) is expected to be approximately 0.5 × VDD and to track variations in the DC level. Externally generated peak noise (non-common mode) on VREFDQ may not exceed ±1% × VDD around the VREFDQ(DC) value. Peak-to-peak AC noise on VREFDQ should not exceed ±2% of VREFDQ(DC). 4. VREFDQ(DC) may transition to VREFDQ(SR) and back to VREFDQ(DC) when in SELF REFRESH, within restrictions outlined in the SELF REFRESH section. 5. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors. Minimum and maximum values are system-dependent. 45 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications – DC and AC Table 23: DDR3L 1.35V Input Switching Conditions - Command and Address Parameter/Condition Symbol DDR3L-800/1066 DDR3L-1333/1600 DDR3L-1866 Units Command and Address 5 160 160 – mV VIH(AC135),min5 135 135 135 mV – – 125 mV VIH(DC90),min 90 90 90 mV Input low DC voltage: Logic 0 VIL(DC90),min –90 –90 –90 mV Input low AC voltage: Logic 0 VIL(AC125),min5 – – –125 mV VIL(AC135),min 5 –135 –135 –135 mV VIL(AC160),min 5 –160 –160 – mV Input high AC voltage: Logic 1 VIH(AC160),min VIH(AC125,)min Input high DC voltage: Logic 1 5 DQ and DM Input high AC voltage: Logic 1 VIH(AC160),min5 160 160 – mV 5 135 135 135 mV 5 – – 130 mV VIH(AC135),min VIH(AC125),min Input high DC voltage: Logic 1 VIH(DC90),min 90 90 90 mV Input low DC voltage: Logic 0 VIL(DC90),min –90 –90 –90 mV Input low AC voltage: Logic 0 VIL(AC125),min5 Notes: – – –130 mV VIL(AC135),min 5 –135 –135 –135 mV VIL(AC160),min 5 –160 –160 – mV 1. All voltages are referenced to VREF. VREF is VREFCA for control, command, and address. All slew rates and setup/hold times are specified at the DRAM ball. VREF is VREFDQ for DQ and DM inputs. 2. Input setup timing parameters (tIS and tDS) are referenced at VIL(AC)/VIH(AC), not VREF(DC). 3. Input hold timing parameters (tIH and tDH) are referenced at VIL(DC)/VIH(DC), not VREF(DC). 4. Single-ended input slew rate = 1 V/ns; maximum input voltage swing under test is 900mV (peak-to-peak). 5. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific speed bin, the user may choose either value for the input AC level. Whichever value is used, the associated setup time for that AC level must also be used. Additionally, one VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may be used for data inputs. For example, for DDR3-800, two input AC levels are defined: VIH(AC160),min and VIH(AC135),min (corresponding VIL(AC160),min and VIL(AC135),min). For DDR3-800, the address/ command inputs must use either VIH(AC160),min with tIS(AC160) of 210ps or VIH(AC150),min with tIS(AC135) of 365ps; independently, the data inputs must use either VIH(AC160),min with tDS(AC160) of 75ps or VIH(AC150),min with tDS(AC150) of 125ps. PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 46 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications – DC and AC Table 24: DDR3L 1.35V Differential Input Operating Conditions (CK, CK# and DQS, DQS#) Parameter/Condition Symbol Min Max Units Notes Differential input logic high – slew VIH,diff(AC)slew 180 N/A mV 4 Differential input logic low – slew VIL,diff(AC)slew N/A –180 mV 4 Differential input logic high VIH,diff(AC) 2 × (VIH(AC) - VREF) VDD/VDDQ mV 5 Differential input logic low VIL,diff(AC) VSS/VSSQ 2 × (VIL(AC) - VREF) mV 6 Differential input crossing voltage relative to VDD/2 for DQS, DQS#; CK, CK# VIX VREF(DC) - 150 VREF(DC) + 150 mV 5, 7, 9 Differential input crossing voltage relative to VDD/2 for CK, CK# VIX (175) VREF(DC) - 175 VREF(DC) + 175 mV 5, 7–9 VDDQ/2 + 160 VDDQ mV 5 VDD/2 + 160 VDD mV 5 VSSQ VDDQ/2 - 160 mV 6 VSS VDD/2 - 160 mV 6 Single-ended high level for strobes VSEH Single-ended high level for CK, CK# Single-ended low level for strobes Single-ended low level for CK, CK# Notes: 1. 2. 3. 4. 5. 6. 7. 8. 9. PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 VSEL Clock is referenced to VDD and VSS. Data strobe is referenced to VDDQ and VSSQ. Reference is VREFCA(DC) for clock and VREFDQ(DC) for strobe. Differential input slew rate = 2 V/ns. Defines slew rate reference points, relative to input crossing voltages. Minimum DC limit is relative to single-ended signals; overshoot specifications are applicable. Maximum DC limit is relative to single-ended signals; undershoot specifications are applicable. The typical value of VIX(AC) is expected to be about 0.5 × VDD of the transmitting device, and VIX(AC) is expected to track variations in VDD. VIX(AC) indicates the voltage at which differential input signals must cross. The VIX extended range (±175mV) is allowed only for the clock; this VIX extended range is only allowed when the following conditions are met: The single-ended input signals are monotonic, have the single-ended swing VSEL, VSEH of at least VDD/2 ±250mV, and the differential slew rate of CK, CK# is greater than 3 V/ns. VIX must provide 25mV (single-ended) of the voltages separation. 47 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications – DC and AC Figure 13: DDR3L 1.35V Input Signal VIL and VIH levels with ringback VDDQ + 0.4V Overshoot VDD + 0.4V Narrow pulse width Minimum VIL and VIH levels VIH MIN(AC) VIH MIN(DC) VIH(AC) VIH(DC) VIL MIN(AC) VDDQ VREF + 125/135/160mV VIH(AC) VREF + 90mV VIH(DC) VREF DC MAX + 1% .51 x VDD VREF = VDD/2 .49 x VDD VREF DC MIN - 1% VDD MAX 2% Total VREF DC MAX VREF DC MIN MAX 2% Total VIL MIN(DC) VDD VIL(DC) VREFDQ + AC noise VREFDQ + DC error VREFDQ - DC error VREFDQ - AC noise VREF - 90mV VIL(DC) VREF - 125/135/160mV VIL(AC) VIL(AC) 0.0V VSS VSS - 0.40V Undershoot VSS - 0.40V Narrow pulse width Note: PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 1. Numbers in diagrams reflect nominal values. 48 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications – DC and AC DDR3L 1.35V AC Overshoot/Undershoot Specification Table 25: DDR3L Control and Address Pins Parameter DDR3L-800 DRR3L-1066 DDR3L-1333 DDR3L-1600 DDR3L-1866 Maximum peak amplitude allowed for overshoot area (see Figure 14) 0.4V 0.4V 0.4V 0.4V 0.4V Maximum peak amplitude allowed for undershoot area (see Figure 15) 0.4V 0.4V 0.4V 0.4V 0.4V Maximum overshoot area above VDD (see Figure 14) 0.67 Vns 0.5 Vns 0.4 Vns 0.33 Vns 0.28 Vns Maximum undershoot area below VSS (see Figure 15) 0.67 Vns 0.5 Vns 0.4 Vns 0.33 Vns 0.28 Vns Table 26: DDR3L 1.35V Clock, Data, Strobe, and Mask Pins Parameter DDR3L-800 DDR3L-1066 DDR3L-1333 DDR3L-1600 DDR3L-1866 Maximum peak amplitude allowed for overshoot area (see Figure 14) 0.4V 0.4V 0.4V 0.4V 0.4V Maximum peak amplitude allowed for undershoot area (see Figure 15) 0.4V 0.4V 0.4V 0.4V 0.4V Maximum overshoot area above VDD/VDDQ (see Figure 14) 0.25 Vns 0.19 Vns 0.15 Vns 0.13 Vns 0.11 Vns Maximum undershoot area below VSS/VSSQ (see Figure 15) 0.25 Vns 0.19 Vns 0.15 Vns 0.13 Vns 0.11 Vns Figure 14: Overshoot Maximum amplitude Overshoot area Volts (V) VDD/VDDQ Time (ns) Figure 15: Undershoot VSS/VSSQ Volts (V) Undershoot area Maximum amplitude Time (ns) PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 49 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications – DC and AC Figure 16: VIX for Differential Signals VDD, VDDQ VDD, VDDQ CK#, DQS# CK#, DQS# X VIX VIX VDD/2, VDDQ/2 X X VDD/2, VDDQ/2 VIX X VIX CK, DQS CK, DQS VSS, VSSQ VSS, VSSQ Figure 17: Single-Ended Requirements for Differential Signals VDD or VDDQ VSEH,min VDD/2 or VDDQ/2 VSEH CK or DQS VSEL,max VSEL VSS or VSSQ PDF: 09005aef833b7221 1Gb_DDR3L.pdf - Rev. K EN 9/14 50 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications – DC and AC Figure 18: Definition of Differential AC-Swing and tDVAC tDVAC VIH,diff(AC)min VIH,diff,min CK - CK# DQS - DQS# 0.0 VIL,diff,max VIL,diff(AC)max tDVAC Half cycle Table 27: DDR3L 1.35V - Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC Ringback DDR3L-800/1066/1333/1600 tDVAC tDVAC DDR3L-1866 tDVAC tDVAC tDVAC Slew Rate (V/ns) at 320mV (ps) at 270mV (ps) at 270mV (ps) at 250mV (ps) at 260mV (ps) >4.0 189 201 163 168 176 4.0 189 201 163 168 176 3.0 162 179 140 147 154 2.0 109 134 95 105 111 1.8 91 119 80 91 97 1.6 69 100 62 74 78 1.4 40 76 37 52 55 1.2 Note1 44 5 22 24 1.0 Note1
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