HAL700

Hardware Documentation D at a S h e e t HAL 700, HAL 740 Dual Hall-Effect Sensors with Independent Outputs ® ® Edition Nov. 30, 2009 DSH000029_002EN HAL700, HAL740 Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers’ technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. Micronas Trademarks – HAL DATA SHEET Micronas Patents Choppered Offset Compensation protected by Micronas patents no. US5260614, US5406202, EP0525235 and EP0548391. Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. 2 Nov. 30, 2009; DSH000029_002EN Micronas DATA SHEET HAL700, HAL740 Contents Page 4 4 4 5 5 5 5 5 6 9 9 10 10 10 10 11 12 16 16 18 20 20 20 20 20 22 Section 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. 2. 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 4. 4.1. 4.2. 5. 5.1. 5.2. 5.3. 5.4. 6. Title Introduction Features Family Overview Marking Code Operating Junction Temperature Range Hall Sensor Package Codes Solderability and Welding Pin Connections Functional Description Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Type Description HAL700 HAL740 Application Notes Ambient Temperature Extended Operating Conditions Start-up Behavior EMC and ESD Data Sheet History Micronas Nov. 30, 2009; DSH000029_002EN 3 HAL700, HAL740 Dual Hall-Effect Sensors with Independent Outputs Release Note: Revision bars indicate significant changes to the previous edition. 1. Introduction The HAL700 and the HAL740 are monolithic CMOS Hall-effect sensors consisting of two independent switches controlling two independent open-drain outputs. The Hall plates of the two switches are spaced 2.35 mm apart. The devices include temperature compensation and active offset compensation. These features provide excellent stability and matching of the switching points in the presence of mechanical stress over the whole temperature and supply voltage range. The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.8 V to 24 V in the ambient temperature range from −40 °C up to 125 °C. The HAL700 and the HAL740 are available in the SMD-package SOT89B-2. Unipolar Sensors: 1.1. Features – two independent Hall-switches – distance of Hall plates: 2.35 mm – switching offset compensation at typically 150 kHz – operation from 3.8 V to 24 V supply voltage – operation with static and dynamic magnetic fields up to 10 kHz – overvoltage protection at all pins – reverse-voltage protection at VDD-pin – robustness of magnetic characteristics against mechanical stress – short-circuit protected open-drain outputs by thermal shut down – constant switching points over a wide supply voltage range – EMC corresponding to ISO 7637 Type HAL700 HAL740 Switching Behavior S1: latching S2: latching 1.2. Family Overview DATA SHEET The types differ according to the switching behavior of the magnetic switching points at the both Hall plates S1 and S2. See Page 16 18 S1: unipolar north sensitive S2: unipolar south sensitive Latching Sensors: The output turns low with the magnetic south pole on the branded side of the package. The output maintains its previous state if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. In case of a south-sensitive switch, the output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The switch does not respond to the magnetic north pole on the branded side. In case of a north-sensitive switch, the output turns low with the magnetic north pole on the branded side of the package and turns high if the magnetic field is removed. The switch does not respond to the magnetic south pole on the branded side. 4 Nov. 30, 2009; DSH000029_002EN Micronas DATA SHEET HAL700, HAL740 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: K or E Package: SF for SOT89B-2 1.3. Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type K HAL700 HAL740 700K 740K Temperature Range E 700E 740E Type: 700 Example: HAL700SF-K → Type: 700 → Package: SOT89B-2 → Temperature Range: TJ = −40 °C to +140 °C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors: Ordering Codes, Packaging, Handling”. 1.4. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). K: TJ = −40 °C to +140 °C E: TJ = −40 °C to +100 °C Note: Due to power dissipation, there is a difference between the ambient temperature (TA) and junction temperature. Please refer to section 5.1. on page 20 for details. 1.6. Solderability and Welding Soldering During soldering reflow processing and manual reworking, a component body temperature of 260 °C should not be exceeded. Welding Device terminals should be compatible with laser and resistance welding. Please note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1.7. Pin Connections 1 VDD 3 S1-Output 2 S2-Output 4 GND Fig. 1–1: Pin configuration Micronas Nov. 30, 2009; DSH000029_002EN 5 HAL700, HAL740 2. Functional Description Clock DATA SHEET The HAL700 and the HAL740 are monolithic integrated circuits with two independent subblocks each consisting of a Hall plate and the corresponding comparator. Each subblock independently switches the comparator output in response to the magnetic field at the location of the corresponding sensitive area. If a magnetic field with flux lines perpendicular to the sensitive area is present, the biased Hall plate generates a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The subblocks are designed to have closely matched switching points. The output of comparator 1 attached to S1 controls the open drain output at Pin 3. Pin 2 is set according to the state of comparator 2 connected to S2. The temperature-dependent bias – common to both subblocks – increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the comparator switches to the appropriate state. The built-in hysteresis prevents oscillations of the outputs. The magnetic offset caused by mechanical stress is compensated for by use of “switching offset compensation techniques”. Therefore, an internal oscillator provides a two-phase clock to both subblocks. For each subblock, the Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Shunt protection devices clamp voltage peaks at the output pins and VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to −15 V. No external reverse protection diode is needed at the VDD-pin for reverse voltages ranging from 0 V to −15 V. Fig. 2–2 and Fig. 2–3 on page 7 show how the output signals are generated by the HAL700 and the HAL740. The magnetic flux density at the locations of the two Hall plates is shown by the two sinusodial curves at the top of each diagram. The magnetic switching points are depicted as dashed lines for each Hall plate separately. t BS1 BS1on t BS2 BS2on t Pin 2 VOH VOL t Pin 3 VOH VOL t IDD 1/fosc tf tf t Fig. 2–1: HAL700 timing diagram with respect to the clock phase 6 Nov. 30, 2009; DSH000029_002EN Micronas DATA SHEET HAL700, HAL740 HAL700 Bon,S1 Boff,S1 Bon,S2 Boff,S2 S1 Output Pin 3 S2 Output Pin 2 0 time Fig. 2–2: HAL700 timing diagram HAL740 Boff,S1 Bon,S1 Bon,S2 Boff,S2 S1 Output Pin 3 S2 Output Pin 2 0 Fig. 2–3: HAL740 timing diagram time Micronas Nov. 30, 2009; DSH000029_002EN 7 HAL700, HAL740 DATA SHEET 1 VDD Reverse Voltage and Overvoltage Protection Temperature Dependent Bias Hysteresis Control Short Circuit and Overvoltage Protection Hall Plate 1 Comparator Switch S1 3 Output S1-Output Hall Plate 2 Comparator 2 Clock S2 Switch Output S2-Output 4 GND Fig. 2–4: HAL700 and HAL740 block diagram 8 Nov. 30, 2009; DSH000029_002EN Micronas DATA SHEET HAL700, HAL740 3. Specifications 3.1. Outline Dimensions Fig. 3–1: SOT89B-2: Plastic Small Outline Transistor package, 4 leads, with two sensitive areas Weight approximately 0.034 g Micronas Nov. 30, 2009; DSH000029_002EN 9 HAL700, HAL740 3.2. Dimensions of Sensitive Area 0.25 mm × 0.12 mm 3.3. Positions of Sensitive Areas SOT89B-2 x1+x2 x1=x2 y (2.35±0.001) mm 1.175 mm nominal 0.975 mm nominal DATA SHEET 3.4. Absolute Maximum Ratings Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit. All voltages listed are referenced to ground (GND). Symbol VDD VO IO TJ 1) Parameter Supply Voltage Output Voltage Continuous Output Current Junction Temperature Range Pin No. 1 2, 3 2, 3 Min. −15 −0.3 − −40 Max. 281) 281) 201) 170 Unit V V mA °C as long as TJmax is not exceeded 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. 10 Nov. 30, 2009; DSH000029_002EN Micronas DATA SHEET HAL700, HAL740 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND). Symbol VDD IO VO Parameter Supply Voltage Continuous Output Current Output Voltage (output switch off) Pin No. 1 3 3 Min. 3.8 0 0 Typ. − − − Max. 24 10 24 Unit V mA V Micronas Nov. 30, 2009; DSH000029_002EN 11 HAL700, HAL740 3.6. Characteristics at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V, GND = 0 V. at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VDD = 5 V. Symbol IDD IDD VDDZ VOZ VOL VOL IOH IOH fosc ten(O) tr tf RthJSB case SOT89B-2 Parameter Supply Current Supply Current over Temperature Range Overvoltage Protection at Supply Overvoltage Protection at Output Output Voltage Output Voltage over Temperature Range Output Leakage Current Output Leakage Current over Temperature Range Internal Sampling Frequency over Temperature Range Enable Time of Output after Setting of VDD Output Rise Time Output FallTime Thermal Resistance Junction to Substrate Backside Pin No. 1 1 1 2, 3 2, 3 2, 3 2, 3 2, 3 − 1 2, 3 2, 3 − Min. 3 2 − − − − − − 100 − − − − Typ. 5.5 7 28.5 28 130 130 0.06 − 150 50 0.2 0.2 150 Max. 9 10 32 32 280 400 0.1 10 − − − − 200 Unit mA mA V V mV mV μA μA kHz μs μs μs K/W Test Conditions TJ = 25 °C DATA SHEET IDD = 25 mA, TJ = 25 °C, t = 2 ms IO = 20 mA, TJ = 25 °C, t = 15 ms IOL = 10 mA, TJ = 25 °C IOL = 10 mA Output switched off, TJ = 25 °C, VOH = 3.8 V to 24 V Output switched off, TJ ≤ 140 °C, VOH = 3.8 V to 24 V VDD = 12 V, B>Bon + 2 mT or B