1014-2

1014 - 2 2 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION The 1014-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF Output Power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes Input prematching and utilizes gold metalization and diffused ballasting to provide high reliagility and supreme ruggedness. CASE OUTLINE 55LT, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 9.7 Watts 50 Volts 3.5 Volts 0.5 A - 65 to +150oC +200oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pin Pg ηc VSWR1 CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F =1000-1400 MHz Vcb = 28 Volts As Above Pout = 2 Watts MIN 2 0.35 7.5 45 10:1 TYP MAX UNITS Watt Watt dB % BVces BVebo Icbo hFE Cob θjc Rev B, Jan 2009 Collector to Emitter Breakdown Emitter to Base Breakdown Collector to Base Current Current Gain Output Capacitance Thermal Resistance Ic = 20 mA Ie = 5 mA Vcb = 28 Volts 50 3.5 10 0.5 100 4.5 18 Volts Volts mA o Vce = 28 V, Ic = 100 mA Vcb = 25 V, f = 1 MHz Tc = 25oC pF C/W Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.