1N3172

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SILICON POWER RECTIFIER • Glass Passivated Die • Rugged Construction Qualified per MIL-PRF-19500/211 • Glass to Metal Header Construction • High Surge Current Capability DEVICES LEVELS 1N3164 1N3168 1N3170 1N3172 1N3174 1N3164R 1N3168R 1N3170R 1N3172R 1N3174R JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Peak Repetitive Reverse Voltage 1N3164 1N3168 1N3170 1N3172 1N3174 1N3164R 1N3168R 1N3170R 1N3172R 1N3174R Symbol Value 200 400 600 800 1000 200 300 6250 0.20 0.80 -65°C to 200°C -65°C to 200°C Unit VRWM V Average Forward Current, TC = 150° Average Forward Current, TC = 120° Peak Surge Forward Current @ tp = 8.3ms, half sinewave, TC = 200°C Thermal Resistance, Junction to Case Typical Thermal Resistance Operating Case Temperature Range Storage Temperature Range IF IF IFSM RθJC RθCS Tj TSTG A A A °C/W °C/W °C °C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Forward Voltage IFM = 940A, TC = 25°C Reverse Current VRM = 200, TC = 25°C VRM = 400, TC = 25°C VRM = 600, TC = 25°C VRM = 800, TC = 25°C VRM = 1000, TC = 25°C Reverse Current VRM = 200, TC = 175°C VRM = 400, TC = 175°C VRM = 600, TC = 175°C VRM = 800, TC = 175°C VRM = 1000, TC = 175°C Note: 1N3164 1N3168 1N3170 1N3172 1N3174 1N3164R 1N3168R 1N3170R 1N3172R 1N3174R 1N3164 1N3168 1N3170 1N3172 1N3174 1N3164R 1N3168R 1N3170R 1N3172R 1N3174R Symbol VFM Min. Max. 1.55 Unit V DO-205AB (DO-9) IRM 10 mA IRM 30 mA T4-LDS-0140 Rev. 1 (091750) Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SILICON POWER RECTIFIER GRAPHS FIGURE 1 TYPICAL FORWARD CHARACTERISTICS FIGURE 3 FORWARD CURRENT DERATING FIGURE 5 MAXIMUM NONREPETITIVE MULTI-CYCLE SURGE CURRENT FIGURE 2 TYPICAL REVERSE CHARACTERISTICS T4-LDS-0140 Rev. 1 (091750) Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SILICON POWER RECTIFIER PACKAGE DIMENSIONS NOTES: Symbol 1. 2. 3. Metric equivalents are given for general information only. Complete threads to extend to within 2.5 threads of seating plane. .750-16 UNF-2A. Maximum pitch diameter of plated threads shall be basic pitch diameter. .7094 (18.019 mm) ref. (Screw Thread Standards for Federal Services) FEDSTD-H28. Angular orientation of terminal and tabulation with respect to hex base is undefined. Square or radius on end of terminal is undefined. A chamfer (or undercut) on one or both ends of hexagonal portions is optional. Tabulation optional. Minimum flat. Flexible leads. A B C φD φD1 E F H I1 φM M1 N Q Q1 φt W 4. 5. 6. 7. 8. Dimensions Inches Millimeters Min Max Min Max 1.520 38.10 .530 .755 13.46 19.18 .063 .172 1.60 4.37 1.100 27.94 .600 15.24 1.218 1.252 30.94 31.75 .250 .562 6.35 14.27 5.125 6.750 130.18 171.45 .375 9.53 .660 .745 16.76 18.92 .125 3.18 .793 .828 20.14 21.03 2.300 57.15 .375 9.53 .265 .350 6.73 3.89 Notes 4 5 7 2 6 6 3 Physical dimensions for semiconductor devices T4-LDS-0140 Rev. 1 (091750) Page 3 of 3