1N3766R

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SILICON POWER RECTIFIER • Glass Passivated Die • 500 Amps Surge Rating Qualified per MIL-PRF-19500/297 • Glass to Metal Seal Construction • VRRM to 1000 Volts DEVICES LEVELS 1N1184 1N1186 1N1188 1N1190 1N3766 1N3768 1N1184R 1N1186R 1N1188R 1N1190R 1N3766R 1N3768R JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Peak Reverse Voltage 1N1184 1N1186 1N1188 1N1190 1N3766 1N3768 1N1184R 1N1186R 1N1188R 1N1190R 1N3766R 1N3768R Symbol Value 100 200 400 600 800 1000 35 500 0.8 -65°C to 175°C -65°C to 175°C Unit VR V Average Forward Current, TC = 150° Peak Surge Forward Current @ tp = 8.3ms, half sinewave, TC = 150°C Thermal Resistance, Junction to Case Operating Case Temperature Range Storage Temperature Range IF IFSM RθJC Tj TSTG A A °C/W °C °C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Forward Voltage IFM = 110A, TC = 25°C* Forward Voltage IFM = 500A, TC = 150°C* Reverse Current VRM = 100, Tj = 25°C VRM = 200, Tj = 25°C VRM = 400, Tj = 25°C VRM = 600, Tj = 25°C VRM = 800, Tj = 25°C VRM = 1000, Tj = 25°C Reverse Current VRM = 100, Tj = 150°C VRM = 200, Tj = 150°C VRM = 400, Tj = 150°C VRM = 600, Tj = 150°C VRM = 800, Tj = 150°C VRM = 1000, Tj = 150°C 1N1184 1N1186 1N1188 1N1190 1N3766 1N3768 1N1184 1N1186 1N1188 1N1190 1N3766 1N3768 1N1184R 1N1186R 1N1188R 1N1190R 1N3766R 1N3768R 1N1184R 1N1186R 1N1188R 1N1190R 1N3766R 1N3768R Symbol VFM VFM Min. Max. 1.4 2.3 Unit V V DO-203AB (DO-5) IRM 10 μA IRM 1 mA * Pulse test: Pulse width 300 µsec, Duty cycle 2% Note: T4-LDS-0138 Rev. 1 (091729) Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SILICON POWER RECTIFIER GRAPHS FIGURE 1 TYPICAL FORWARD CHARACTERISTICS FIGURE 3 FORWARD CURRENT DERATING FIGURE 4 TRANSIENT THERMAL IMPEDANCE FIGURE 2 TYPICAL REVERSE CHARACTERISTICS T4-LDS-0138 Rev. 1 (091729) Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SILICON POWER RECTIFIER PACKAGE DIMENSIONS NOTES: 1 2 3 4 5 6 7 8 9 Dimensions are in inches. Millimeters are given for general information only. Units must not be damaged by torque of 30 inch-pounds applied to .250-28 UNF-28 nut assembled on thread. Diameter of unthreaded portion .249 inch (6.32 mm) max and .220 inch (5.59 mm) min. Complete threads to extend to within 2.5 threads of seating plane. Angular orientation of this terminal is undefined. Max pitch diameter of plated threads shall be basic pitch diameter .2268 inch (5.76 mm) reference FEDSTD-H28. A chamfer or undercut on one or both ends of the hex portion is optional; minimum base diameter at seating plane. .600 inch (15.24 mm). In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. Ltr OAH CH HT SL HT1 B CD HF J φT C M Dimensions Inches Millimeters Min Max Min Max 1.000 25.40 .450 11.43 .115 .200 2.93 5.08 .422 .453 10.72 11.50 .060 1.53 .250 .375 6.35 9.52 .667 16.94 .667 .687 16.95 17.44 .156 3.97 .140 .175 3.56 04.44 .080 2.03 .030 0.77 Physical dimensions, (all device types) DO-5 T4-LDS-0138 Rev. 1 (091729) Page 3 of 3