1N6766R

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com DUAL ULTRAFAST POWER RECTIFIER Qualified per MIL-PRF-19500/643 DEVICES LEVELS 1N6766 1N6767 1N6766R 1N6767R JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) (Per Diode) Parameters / Test Conditions Peak Repetitive Reverse Voltage Average Forward Current (1) Peak Surge Forward Current Thermal Resistance - Junction to Case Note: (1) Derate @ 240mA/°C above TC = 100°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Breakdown Voltage (2) IR = 10µAdc Forward Voltage IF = 6Adc IF = 12Adc (2) Symbol VRWM IF IFSM Rθjc Value 400 600 12 125 1.8 Unit Vdc Adc A(pk) °C/W TO-254 1N6766, R 1N6767, R TC = +100°C Symbol VBR Min. 400 600 Max. Unit Vdc 1N6766 1N6767 •1 •2 •3 1N6766, 1N6767 1.35 1.55 Vdc VF1 VF2 Reverse Leakage Current VR = 320V VR = 480V Reverse Leakage Current VR = 320V, TC = +100°C VR = 480V, TC = +100°C Reverse Recovery Time IF = 1.0A, di/dt = 50A/µs Junction Capacitance VR = 5Vdc, f = 1.0MHz Note: (2) Pulse Test; 300µS, duty cycle ≤ 2% 1N6766 1N6767 IR1 10 µAdc •1 •2 •3 1N6766R, 1N6767R 1N6766 1N6767 IR2 1.0 mAdc trr 60 nS CJ 300 pF T4-LDS-0019 Rev. 1 (072045) Page 1 of 1