1N8165US

1N8149US – 1N8182US Available Voidless-Hermetically-Sealed Unidirectional 150 W Low-Capacitance Transient Voltage Suppressors DESCRIPTION This series of voidless-hermetically-sealed unidirectional low-capacitance Transient Voltage Suppressor (TVS) designs are ideal for protecting higher frequency applications in high-reliability applications where a failure cannot be tolerated. They include a unique rectifier diode in series and opposite direction from the TVS to achieve a very low capacitance of 4 pF. This product series provides a working peak “standoff” voltage selection from 6.8 to 170 volts with 150 watt ratings. They are very robust in hardglass construction and also use an internal metallurgical bond identified as Category 1 for high reliability applications. These devices are also available in axial leaded packages for thru-hole mounting. “A” SQ-MELF Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES        Also available in: High surge current and peak pulse power unidirectional protection for sensitive circuits. Very low capacitance for high frequency or high baud rate applications. Bidirectional capability with two devices in anti-parallel (see Figure 5). Triple-layer passivation. Internal “Category 1” metallurgical bonds. Voidless hermetically sealed glass package. RoHS compliant versions are available. “A” Package (axial-leaded) 1N8149 – 1N8182 APPLICATIONS / BENEFITS           High reliability transient protection. Extremely robust construction. Working peak “standoff” voltage (VWM) from 6.8 to 170 volts. Available as 150 W peak pulse power (PPP) at 10/1000 µs. Lowest available capacitance for 150 W rated TVS. ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively. Secondary lightning protection per select levels in IEC61000-4-5. Square-end-cap terminals for easy placement. Nonsensitive to ESD per MIL-STD-750 method 1020. Inherently radiation hard as described in Microsemi MicroNote 050. MAXIMUM RATINGS Parameters/Test Conditions Junction and Storage Temperature Capacitance at zero volts Thermal Resistance junction to ambient o Peak Pulse Power at 25 C (10µs/1000µs) Impulse repetition rate (duty factor) o Steady State (Average) Power @ TA = 25 C Solder Temperature (10 s maximum) Symbol Value TJ and TSTG C RθJA PPP d.f PM(AV) -55 to +175 4 150 150 0.01 1.0 260 Unit o C pF o C/W W % W o C Note: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(MAX) is not exceeded. T4-LDS-xxxx, Rev x (10-02-14) ©2013 Microsemi Corporation MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 6 1N8149US – 1N8182US MECHANICAL and PACKAGING         CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINALS: End caps feature tin/lead or RoHS compliant matte/tin plating over copper. MARKING: None POLARITY: Cathode band MOUNTING: Any position TAPE & REEL option: Standard per EIA-481-B. Consult factory for quantities. WEIGHT: Approximately 539 milligrams. See Package Dimensions on last page. PART NOMENCLATURE MQ 1N8149 US (e3) Reliability Level MQ (reference JAN) MX (reference JANTX) MV (reference JANTXV) MS (reference JANS) Blank = Commercial RoHS Compliance e3 = RoHS compliant Blank = non-RoHS compliant MELF Surface Mount Type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol V(BR) V(BR) VWM ID I(BR) IPP VC PPP CT VWIB IIB Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in temperature that caused it expressed in %/°C or mV/°C. Breakdown Voltage: The voltage across the device at a specified current I(BR) in the breakdown region. Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that may be continuously applied over the standard operating temperature. Standby Current: The current through the device at rated stand-off voltage. Breakdown Current: The current used for measuring Breakdown Voltage V(BR) Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an impulse current (IPP) for a specified waveform. Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The impulse power is the maximum-rated value of the product of IPP and VC. Total Capacitance: The total small signal capacitance between the diode terminals of a complete device. Inverse Blocking Voltage: The maximum-rated value of dc or peak blocking voltage in the inverse direction. Blocking Leakage Current: The current through the device at the rated inverse blocking voltage (VWIB). T4-LDS-xxxx, Rev x (10-02-14) ©2013 Microsemi Corporation Page 2 of 6 1N8149US – 1N8182US ELECTRICAL CHARACTERISTICS @ TA = 25oC unless otherwise noted. Type Number 1N8149 1N8150 1N8151 1N8152 1N8153 1N8154 1N8155 1N8156 1N8157 1N8158 1N8159 1N8160 1N8161 1N8162 1N8163 1N8164 1N8165 1N8166 1N8167 1N8168 1N8169 1N8170 1N8171 1N8172 1N8173 1N8174 1N8175 1N8176 1N8177 1N8178 1N8179 1N8180 1N8181 1N8182 Minimum Breakdown Voltage (V(BR)) Breakdown Current V 7.79 8.65 9.50 10.4 11.4 12.4 13.8 15.2 17.1 19.0 20.9 22.8 25.7 28.5 31.4 34.2 37.1 40.9 44.7 48.5 53.2 58.9 64.6 71.3 77.9 86.5 95.0 104.0 114.0 124.0 138.0 152.0 171.0 190.0 T4-LDS-xxxx, Rev x (10-02-14) (I(BR)) Working Standoff Voltage (VWM) Maximum Standby Current (ID) mA 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 V 6.8 7.5 8.5 9.0 10.0 11.0 12.0 13.0 15.0 17.0 18.0 20.0 22.0 25.0 28.0 30.0 33.0 36.0 40.0 43.0 47.0 53.0 58.0 64.0 70.0 75.0 82.0 94.0 100.0 110.0 120.0 130.0 150.0 170.0 A 20 10 10 5 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ©2013 Microsemi Corporation Maximum Peak Clamping Voltage (VC) V 12.8 13.5 14.5 15.6 16.9 18.2 20.2 22.3 25.1 27.7 30.5 33.3 37.4 41.6 45.7 49.9 53.6 59.1 64.6 70.1 77.0 85.3 93.7 103.0 113.0 125.0 137.0 152.0 168.0 183.0 208.0 225.0 261.0 294.0 Maximum Surge Current (IPP) A 11.7 11.1 10.3 9.62 8.88 8.24 7.42 6.73 5.98 5.42 4.92 4.50 4.01 3.60 3.28 3.01 2.80 2.54 2.32 2.14 1.95 1.76 1.60 1.45 1.32 1.20 1.09 0.98 0.89 0.82 0.72 0.67 0.57 0.51 Maximum V(BR) Temperature Coefficient (αV(BR)) %/ºC .065 .068 .073 .075 .078 .081 .084 .086 .088 .090 .092 .094 .096 .097 .098 .099 .100 .101 .101 .102 .103 .104 .104 .105 .105 .105 .106 .107 .107 .107 .108 .108 .108 .108 Capacitance Page 3 of 6 (CT) pF 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 Inverse Blocking Voltage (VWIB) Blocking Leakage Current (IIB) V 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 A 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1N8149US – 1N8182US PEAK PULSE POWER (PPP) kW GRAPHS PULSE TIME (tp) ms to 50% decay point in Figure 2 IPP – Peak Pulse Current - % IPP FIGURE 1 PEAK PULSE POWER VS. PULSE TIME t – Time – ms FIGURE 2 10/1000 s CURRENT IMPULSE WAVEFORM T4-LDS-xxxx, Rev x (10-02-14) ©2013 Microsemi Corporation Page 4 of 6 1N8149US – 1N8182US Peak Pulse Power (PPP) or current IPP o (surge) in percent of 25 C rating GRAPHS PULSE CONDITIONS DEFINED IN FIGURES 1 & 2 o TA Ambient Temperature C FIGURE 3 DERATING CURVE SCHEMATIC APPLICATIONS The TVS low capacitance device configuration described in this data sheet is shown in Figure 4 involving a TVS and a unique diode in series and opposite direction. For bidirectional low capacitance TVS applications, use two (2) low capacitance TVS devices as described in this data sheet in anti-parallel as shown in Figure 5. This will result in twice the capacitance of Figure 4 specified in this data sheet. Cathode> > FIGURE 4 Low Capacitance TVS T4-LDS-xxxx, Rev x (10-02-14) FIGURE 5 Bidirectional configuration (2 Low Capacitance TVS devices in anti-parallel) ©2013 Microsemi Corporation Page 5 of 6 1N8149US – 1N8182US PACKAGE DIMENSIONS NOTES: Ltr 1. 2. 3. 4. Dimensions are in inches. Millimeters are given for general information only. Minimum clearance of glass body to mounting surface on all orientations. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. BD BL ECT S Dimensions Inches Millimeters Min Max Min Max 0.091 0.103 2.31 2.62 0.168 0.215 4.28 5.47 0.019 0.028 0.48 0.71 0.003 0.08 PAD LAYOUT DIM A B C INCH 0.288 0.070 0.155 MILLIMETERS 7.32 1.78 3.94 NOTE: If mounting requires adhesive separate from the solder, an additional 0.080 inch diameter contact may be placed in the center between the pads as an optional spot for cement. T4-LDS-xxxx, Rev x (10-02-14) ©2013 Microsemi Corporation Page 6 of 6