2N2604_1

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 DEVICES LEVELS 2N2604 2N2605 2N2604UB 2N2605UB JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C (1) Symbol VCBO VCEO VEBO IC PT TJ, Tstg 2N2604 80 60 6.0 30 400 2N2605 70 Unit Vdc Vdc Vdc mAdc mW/°C °C TO-46 (TO-206AB) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Junction-to-Ambient UB Note: 1/ Consult 19500/354 for thermal curves -65 to +200 Symbol RθJA Max. 437 275 Unit °C/mW ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Base Cutoff Current VCB = 80V dc 2N2604, UB VCB = 70V dc 2N2605, UB VCB = 50V dc 2N2604, 2N2605, UB VCB = 50V dc, TA = +150°C 2N2604, 2N2605, UB Collector-Emitter Breakdown Current IC = 10mAdc Emitter-Base Cutoff Current VEB = 6.0Vdc VEB = 5.0Vdc Collector-Emitter Cutoff Current VCE = 50Vdc Symbol Min. Max. Unit ICBO 10.0 10.0 10.0 5.0 60 10.0 2.0 10 uAdc nAdc uAdc uAdc Vdc uAdc ηAdc ηAdc UB Package V(BR)CEO IEBO ICES T4-LDS-0092 Rev. 2 (101320) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters / Test Conditions ON CHARACTERTICS (2) Forward-Current Transfer Ratio IC = 10μAdc, VCE = 5.0Vdc IC = 500μAdc, VCE = 5.0Vdc IC = 10mAdc, VCE = 5.0Vdc IC = 10mAdc, VCE = 5.0Vdc, TA = -55°C Collector-Emitter Saturation Voltage IC = 10mAdc, IB = 500μAdc Base-Emitter Saturation Voltage IC = 10mA, IB = 500μAdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Small-Signal Short-Circuit Input Impedance IC = 1.0mAdc, VCB = 5.0Vdc, f = 1.0kHz Symbol 2N2604, UB 2N2605, UB hie Min. 1.0 2.0 Max. 10 20 40 60 60 150 1.0 180 450 8.0 6.0 Unit kΩ Symbol Min. Max. Unit 2N2604, UB 2N2605, UB 2N2604, UB 2N2605, UB 2N2604, UB 2N2605, UB 2N2604, UB 2N2605, UB VCE(sat) hFE 40 100 60 150 40 100 15 30 120 300 180 450 160 400 0.3 Vdc VBE(sat) 0.7 0.9 Vdc Small-Signal Open-Circuit Forward Current Output Admittance IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz 2N2604, UB 2N2605, UB Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz 2N2604, UB 2N2605, UB Magnitude of Small-Signal Forward Current Transfer Ratio IC = 0.5mAdc, VCE = 5.0Vdc, f = 30MHz Output Capacitance VCB = 5.0Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz Noise Figure VCE = 5.0Vdc, IC = 10μAdc, Rg = 10kΩ, f = 100Hz VCE = 5.0Vdc, IC = 10μAdc, Rg = 10kΩ, f = 1.0kHz VCE = 5.0Vdc, IC = 10μAdc, Rg = 10kΩ, f = 10kHz (2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0% hoe μmhos hfe |hfe| Cobo pF F1 F2 F3 5.0 3.0 3.0 dB T4-LDS-0092 Rev. 2 (101320) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .065 .085 1.65 2.16 .209 .230 5.31 5.84 .100 TP 2.54 TP .016 .021 0.41 0.53 .500 1.750 12.70 44.45 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .040 1.02 .028 .048 0.71 1.22 .036 .046 0.91 1.17 .010 0.25 45° TP 45° TP Symbol CD CH HD LC LD LL LU L1 L2 Q TL TW r α Note 5 6 6 6 6 6 4 3, 8 3, 8 9 5 NOTES: 1. 2. 3. 4. 5. Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and lead 3 is collector. Millimeters are given for general information only. Symbol TL is measured from HD maximum. Details of outline in this zone are optional. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by the gauge and gauging procedure. 6. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. 7. Lead number three is electrically connected to case. 8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 9. Symbol r applied to both inside corners of tab. 10. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 1. Physical dimensions - (TO-46). T4-LDS-0092 Rev. 2 (101320) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Symbol BH BL BW CL CW LL1 LL2 NOTES: 1. 2. 3. 4. 5. Dimensions Inches Millimeters Min Max Min Max .046 .056 1.17 1.42 .115 .128 2.92 3.25 .085 .108 2.16 2.74 .128 3.25 .108 2.74 .022 .038 0.56 0.97 .017 .035 0.43 0.89 Dimensions Notes Symbol LS1 LS2 LW r r1 r2 Inches Min Max .035 .039 .071 .079 .016 .024 .008 .012 .022 Millimeters Min Max 0.89 0.99 1.80 2.01 0.41 0.61 0.20 0.31 0.56 Notes Dimensions are in inches. Millimeters are given for general information only. Hatched areas on package denote metallized areas Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 2. Physical dimensions, surface mount (UB version). T4-LDS-0092 Rev. 2 (101320) Page 4 of 4