2N2904A

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/290 DEVICES LEVELS 2N2904 2N2904A 2N2904AL 2N2905 2N2905A 2N2905AL JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C @ TC = +25°C (2) Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to-Ambient NOTES: 1/ Derate linearly 3.43W/°C for TA > +25°C 2/ Derate linearly 17.2W/°C for TC > +25°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Current IC = 10mAdc 2N2904, 2N2905 2N2904A, 2N2905A / AL Collector-Emitter Cutoff Voltage 2N2904, 2N2905 VCE = 40Vdc 2N2904A, 2N2905A / AL VCE = 60Vdc Collector-Base Cutoff Current 2N2904, 2N2905 VCB = 50Vdc 2N2904A, 2N2905A / AL VCB = 60Vdc Emitter-Base Cutoff Current VEB = 3.5Vdc VEB = 5.0Vdc All Types Symbol Min. Max. Unit (1) Symbol VCEO VCBO VEBO IC PT TJ, Tstg RθJC 2N2904 2N2905 40 2N2904A, L 2N2905A, L 60 60 5.0 Unit Vdc Vdc Vdc mAdc W/°C °C °C/W TO-39 (TO-205AD) 2N2904, 2N2904A 2N2905, 2N2905A 600 0.8 3.0 -65 to +200 50 V(BR)CEO 40 60 1.0 20 10 10 50 10 Vdc TO-5 2N2904AL, 2N2905AL ICES µAdc ηAdc ηAdc µAdc ηAdc µAdc ICBO IEBO T4-LDS-0186 Rev. 1 (101764) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters / Test Conditions ON CHARACTERTICS (3) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 2N2904, 2N2904A / AL 2N2905, 2N2905A / AL 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL hFE 20 35 40 75 25 50 40 100 35 75 40 100 40 100 20 30 40 50 120 300 175 450 175 450 Symbol Min. Max. Unit IC = 1.0mAdc, VCE = 10Vdc IC = 10mAdc, VCE = 10Vdc IC = 150mAdc, VCE = 10Vdc IC = 500mAdc, VCE = 10Vdc Collector-Emitter Saturation Voltage IC = 150mAdc, IB = 15mAdc IC = 500mAdc, IB = 50mAdc Base-Emitter Saturation Voltage IC = 150mA, IB = 15mAdc IC = 500mA, IB = 50mAdc VCE(sat) 0.4 1.6 Vdc VBE(sat) 1.3 2.6 Vdc T4-LDS-0186 Rev. 1 (101764) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Small-Signal Short-Circuit Forward-Current Transfer Ratio IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N2904 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL Small-Signal Short-Circuit Forward-Current Transfer Ratio IC = 50mAdc, VCE = 20Vdc, f = 100MHz Output Capacitance VCB = 10Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz Iutput Capacitance VEB = 2.0Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time VCC = 30Vdc, IC = 150mAdc, IB1 = 15mAdc Turn-Off Time VCC = 30Vdc, IC = 150Adc, IB1 = IB2 = 15mA (3) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0% Symbol t Symbol Min. Max. 25 50 40 100 2.0 8.0 30 Unit hfe |hfe| Cobo Cibo pF pF Min. Max. 45 300 Unit ηs ηs on t off T4-LDS-0186 Rev. 1 (101764) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Dimensions Inches Millimeters Min Max Min Max .305 .335 7.75 8.51 .240 .260 6.10 6.60 .335 .370 8.51 9.40 .200 TP 5.08 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .050 1.27 .029 .045 0.74 1.14 .028 .034 0.71 0.86 .010 0.25 45° TP 45° TP Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r α Note 6 7, 8 7, 8, 12 7, 8 7, 8 7, 8 5 4 3 10 6 NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. 12. For "L" suffix devices, dimension LL is 1.50 (38.10 mm) minimum, 1.75 (44.45 mm) maximum. 13. Lead 1 = emitter, lead 2 = base, lead 3 = collector. FIGURE 1. Physical dimensions (similar to TO-39) T4-LDS-0186 Rev. 1 (101764) Page 4 of 4