2N3440L

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 DEVICES LEVELS 2N3439 2N3439L 2N3439UA 2N3440 2N3440L 2N3440UA JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation UA @ TA = +25°C @ TC = +25°C (2) @ TSP = +25°C (3) (1) Symbol VCEO VCBO VEBO IC PT Top , Tstg 2N3439 350 450 7.0 1.0 0.8 5.0 2.0 2N3440 250 300 Unit Vdc Vdc Vdc Adc W °C TO-5 * 2N3439L, 2N3440L Operating & Storage Temperature Range 1) 2) 3) Derate linearly @ 4.57mW/°C for TA > +25°C Derate linearly @ 28.5mW/°C for TC > +25°C Derate linearly @ 14mW/°C for TSP > +25°C -65 to +200 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10mAdc RBB1 = 470Ω;VBB1 = 6V L = 25mH (min); f = 30 – 60Hz Collector-Emitter Cutoff Current VCE = 300Vdc VCE = 200Vdc Emitter-Base Cutoff Current VEB = 7.0Vdc Collector-Emitter Cutoff Current VCE = 450Vdc, VBE = -1.5Vdc VCE = 300Vdc, VBE = -1.5Vdc Collector-Base Cutoff Current VCB = 360Vdc VCB = 250Vdc VCB = 450Vdc VCB = 300Vdc 2N3439 2N3440 2N3439 2N3440 2N3439 2N3440 2N3439 2N3440 V(BR)CEO 350 250 Vdc TO-39 * (TO-205AD) 2N3439, 2N3440 2.0 2.0 10 5.0 5.0 2.0 2.0 5.0 5.0 µAdc µAdc µAdc UA 2N3439UA, 2N3440UA Symbol Min. Max. Unit 2N3439 2N3440 ICEO IEBO ICEX ICBO µAdc * See Appendix A for Package Outline T4-LDS-0022 Rev. 2 (080663) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters / Test Conditions ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 20mAdc, VCE = 10Vdc IC = 2.0mAdc, VCE = 10Vdc IC = 0.2mAdc, VCE = 10Vdc Collector-Emitter Saturation Voltage IC = 50mAdc, IB = 4.0mAdc Base-Emitter Saturation Voltage IC = 50mAdc, IB = 4.0mAdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 10mAdc, VCE = 10Vdc, f = 5.0MHz Forward Current Transfer Ratio IC = 5.0mAdc, VCE = 10V, f = 1.0kHz Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Input Capacitance VEB = 5.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time VCC = 200Vdc; IC = 20mAdc, IB1 = 2.0mAdc Turn-Off Time VCC = 200Vdc; IC = 20mAdc, IB1 = -IB2 = 2.0mAdc SAFE OPERATING AREA DC Tests TC = +25°C, 1 Cycle, t = 1.0s Test 1 VCE = 5.0Vdc, IC = 1.0Adc Test 2 VCE = 350Vdc, IC = 14mAdc Test 3 VCE = 250Vdc, IC = 20mAdc Symbol ton Min. Max. 1.0 Unit µs Symbol |hfe| hfe Cobo Cibo Min. 3.0 Max. 15 Unit (3) Symbol Min. Max. Unit hFE 40 30 10 160 VCE(sat) VBE(sat) 0.5 1.3 Vdc Vdc 25 10 75 pF pF toff 10 µs Both Types 2N3439 2N3440 (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0% T4-LDS-0022 Rev. 2 (080663) Page 2 of 2