TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com
PNP SMALL SIGNAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/511
DEVICES
LEVELS
2N4261
2N4261UB
JAN JANTX JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C Operating & Storage Junction Temperature Range
Symbol
VCEO VCBO VEBO IC PT Top, Tstg
Value
15 15 4.5 30 0.2 -65 to +200
Unit
Vdc Vdc Vdc mAdc W °C
TO-72
2N4261
Note: Consult 19500/511 for Thermal Performance Curves.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions
OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Base Cutoff Current VCB = 15Vdc Emitter-Base Cutoff Current VEB = 4.5Vdc Collector-Emitter Cutoff Current VCE = 10Vdc, VBE = 0.4Vdc Collector-Emitter Cutoff Current VCE = 10Vdc, VBE = 2.0Vdc V(BR)CEO ICBO IEBO ICEX1 ICEX2 15 10 10 50 5 Vdc μAdc μAdc ηAdc ηAdc
Symbol
Min.
Max.
Unit
3 PIN
2N4261UB
T4-LDS-0150 Rev. 1 (092064)
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com
PNP SMALL SIGNAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/511
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions ON CHARACTERISTICS
(4)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio IC = 1.0mAdc, VCE = 1Vdc IC = 10mAdc, VCE = 1Vdc IC = 30mAdc, VCE = 1Vdc Collector-Emitter Saturation Voltage IC = 1mAdc, IB = 0.1mAdc IC = 10mAdc, IB = 1.0mAdc Base-Emitter Saturation Voltage (Non-Saturated) VCE = 1Vdc, IC = 1mAdc VCE = 1Vdc, IC = 10mAdc hFE
25 30 20 150
VCE(sat)
0.15 0.35 0.6 0.80 1.0
Vdc
VBE
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Magnitude of Small–Signal Forward Current Transfer Ratio IC = 10mAdc, VCE = 10Vdc, f = 100MHz Output Capacitance VCB = 4Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Input Capacitance VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Cibo 2.5 pF Cobo 2.5 pF Symbol |hfe| Min. 20 Max. Unit
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Turn-On Time VCC = 17Vdc; IC = 10mAdc Turn-Off Time VCC = 17Vdc; IC = 10mAdc (4) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%. Symbol ton Min. Max. 2.5 Unit ηs
toff
3.5
ηs
T4-LDS-0150 Rev. 1 (092064)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com
PNP SMALL SIGNAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/511
PACKAGE DIMENSIONS
Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .170 .210 4.32 5.33 .209 .230 5.31 5.84 .100 TP 2.54 TP .016 .021 .406 .533 .500 .750 12.70 19.05 .016 .019 .41 .48 .050 1.27 .250 6.35 .100 2.54 .040 1.02 .028 .048 .71 1.22 .036 .046 .91 1.17 .007 .18 45° TP
Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r α
Notes 5 5 7, 8 7, 8 7, 8
5
NOTES: 1 Dimension are in inches. 2 Millimeters are given for general information only. 3 Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28 mm). 4 Dimension TL measured from maximum HD. 5 Body contour optional within zone defined by HD, CD, and Q. 6 Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7 Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8 All four leads. 9 Dimension r (radius) applies to both inside corners of tab. 10 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. 11 Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected).
FIGURE 1. Physical dimensions for 2N4261 (TO-72).
T4-LDS-0150 Rev. 1 (092064)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com
PNP SMALL SIGNAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/511
Ltr. BH BL BW CL CW LL1 LL2
Dimensions Inches Millimeters Min Max Min Max .046 .056 1.17 1.42 .115 .128 2.92 3.25 .085 .108 2.16 2.74 .128 3.25 .108 2.74 .022 .038 0.56 0.96 .017 .035 0.43 0.89
Note
Ltr. LS1 LS2 LW r r1 r2
Dimensions Inches Millimeters Min Max Min Max .035 .040 0.89 1.02 .071 .079 1.80 2.01 .016 .024 0.41 0.61 .008 0.20 .012 0.31 .022 0.56
Note
NOTES: 1 Dimensions are in inches. 2 Millimeters are given for general information only. 3 Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 4 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 2. Physical dimensions for 2N4261UB, surface mount.
T4-LDS-0150 Rev. 1 (092064)
Page 4 of 4
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