2N5238S

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 Devices 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Junction Temp. Range 2N4150 2N5237 2N5238 Symbol 2N4150S 2N5237S 2N5238S Unit VCEO VCBO VEBO IC PT TJ, Tstg Symbol RθJC RθJA 70 100 120 150 10 10 1.0 5.0 -65 to +200 Max. 0.020 0 170 200 Vdc Vdc Vdc Adc W 0 TO- 5* 2N4150, 2N5237, 2N5238 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Junction-to-Ambient 1) Unit C/mW 0.175 2) Derate linearly @ 5.7 mW/0C for TA > +250C Derate linearly @ 50 mW/0C for TC > +250C TO-39* (TO-205AD) 2N4150S, 2N5237S, 2N5238S *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Emitter-Base Breakdown Voltage IE = 10 µAdc Collector-Emitter Breakdown Voltage IC = 0.1 Adc V(BR)EBO 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S V(BR)CEO 7.0 70 120 170 10 10 10 Vdc Vdc Collector-Emitter Cutoff Current VEB = 0.5 Vdc, VCE = 60 Vdc VEB = 0.5 Vdc, VCE = 110 Vdc VEB = 0.5 Vdc, VCE = 160 Vdc ICEX µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N4150, 2N4150S, 2N5237, 2N5237S, 2N5238, 2N5238S JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics OFF CHARACTERISTICS (con’t) Collector-Base Cutoff Current VCE = 60 Vdc VCE = 110 Vdc VCE = 160 Vdc Emitter-Base Cutoff Current VBE = 7.0 Vdc VBE = 5.0 Vdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 150 Vdc VCB = 200 Vdc VCB = 80 Vdc ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 1.0 Adc, VCE = 5.0 Vdc Symbol Min. Max. Unit µAdc 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S ICEO 10 10 10 10 0.1 10 10 10 0.1 IEBO µAdc 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S All Types ICBO µAdc IC = 5.0 Adc, VCE = 5.0 Vdc IC = 10 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 5.0 Adc, IB = 0.5 Adc IC = 10 Adc, IB = 1.0 Adc Base-Emitter Saturation Voltage IC = 5.0 Adc, IB = 0.5 Adc IC = 10 Adc, IB = 1.0 Adc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.2 Adc, VCE = 10 Vdc, f = 10 MHz Forward Current Transfer Ratio IC = 50 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz SWITCHING CHARACTERISTICS Delay Time VCC = 20 Vdc, VBB = 5.0 Vdc, Rise Time IC = 5.0 Adc, IB1 = 0.5 Adc Storage Time VCC = 20 Vdc, VBB = 5.0 Vdc, Fall Time IC = 5.0 Adc, IB1 = -IB2 = 0.5 Adc SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = 40 Vdc, IC = 0.22 Adc Test 2 VCE = 70 Vdc, IC = 90 mAdc Test 3 VCE = 120 Vdc, IC = 15 mAdc 2N5237, 2N5237S VCE = 170 Vdc, IC = 3.5 mAdc 2N5238, 2N5238S (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S All Types All Types hFE 50 50 50 40 10 200 225 225 120 0.6 2.5 1.5 25 Vdc VCE(sat) VBE(sat) Vdc hfe 1.5 7.5 hfe 40 40 40 160 160 250 350 50 500 1.5 500 pF µs µs µs µs Cobo t d r t s t f t 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2