2N5339U3

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/560 DEVICES LEVELS 2N5339 2N5339U3 JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +25°C (1) @ TC = +25°C (2) @ TC = +25°C (3) – U3 Symbol VCEO VCBO VEBO IB IC PT Top , Tstg RθJA Value 100 100 6.0 1.0 5.0 1.0 17.5 75 -65 to +200 175 Unit Vdc Vdc Vdc Adc Adc W °C °C/W TO-39 (TO-205AD) Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to Air 1) 2) 3) Derate linearly 5.71mW/°C for TA > 25°C Derate linearly 100mW/°C for TC > 25°C Derate linearly 434mW/°C for TC > 25°C – U3 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 50mAdc Collector-Emitter Cutoff Current VCE = 100Vdc Collector-Emitter Cutoff Current VCE = 90Vdc, VBE = 1.5Vdc Collector-Base Cutoff Current VCB = 100Vdc Emitter-Base Cutoff Current VEB = 6.0Vdc V(BR)CEO ICEO ICEX ICBO IEBO 100 100 1.0 1.0 100 Vdc µAdc µAdc µAdc µAdc U-3 (TO-276AA) Symbol Min. Max. Unit T4-LDS-0011 Rev. 2 (080693) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/560 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters / Test Conditions ON CHARACTERISTICS (3) Symbol Min. Max. Unit Forward-Current Transfer Ratio IC = 0.5Adc, VCE = 2.0Vdc IC = 2.0Adc, VCE = 2.0Vdc IC = 5.0Adc, VCE = 2.0Vdc Collector-Emitter Saturation Voltage IC = 2.0Adc, IB = 0.2Adc IC = 5.0Adc, IB = 0.5Adc Base-Emitter Saturation Voltage IC = 2.0Adc, IB = 0.2Adc IC = 5.0Adc, IB = 0.5Adc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.5Adc, VCE = 10Vdc, f = 10MHz Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Input Capacitance VBE = 2.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz SAFE OPERATING AREA DC Tests TC = +25°C, 1 Cycle, t ≥ 0.5s Test 1 VCE = 2.0Vdc, IC = 5.0Adc Test 2 VCE = 5.0Vdc, IC = 2.0Adc Test 3 VCE = 90Vdc, IC = 55mAdc (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0% hFE 60 60 40 240 VCE(sat) 0.7 1.2 Vdc VBE(sat) 1.2 1.8 Vdc Symbol |hfe| Min. 3.0 Max. 15 Unit Cobo 250 pF Cibo 1,000 pF T4-LDS-0011 Rev. 2 (080693) Page 2 of 2