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2N5685_1

2N5685_1

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    2N5685_1 - NPN POWER SILICON TRANSISTOR - Microsemi Corporation

  • 数据手册
  • 价格&库存
2N5685_1 数据手册
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/464 DEVICES LEVELS 2N5685 2N5686 JAN JANTX JANTV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current @ TC = +25°C (1) Total Power Dissipation @ TC = +100°C (1) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Junction-to-Case Note: 1. Symbol RθJC Max. .0584 Unit °C/W Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg 2N5685 60 60 5.0 15 2N5686 80 80 5.0 15 Unit Vdc Vdc Vdc Adc Adc W W °C 50 50 300 300 171 171 -55 to +200 TO-3 (TO-204AE) Derate linearly 1.715 W/°C between TC = 25°C and TC = 200°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS (1) Symbol Min. Max. Unit Collector-Emitter Breakdown Voltage IC = 100mAdc Collector-Emitter Cutoff Current VCE = 30Vdc VCE = 40Vdc Collector-Emitter Cutoff Current VCE = 60Vdc, VBE = 1.5Vdc VCE = 80Vdc, VBE = 1.5Vdc Collector-Base Cutoff Current VCE = 60Vdc VCE = 80Vdc Emitter-Base Cutoff Current 2N5685 2N5686 2N5685 2N5686 2N5685 2N5686 2N5685 2N5686 V(BR)CEO ICEO ICEX 60 80 500 500 10 10 2.0 2.0 1.0 Vdc μAdc μAdc ICBO IEBO mAdc mAdc VEB = 5.0Vdc T4-LDS-0162 Rev. 1 (100546) Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 5.0Adc, VCE = 2.0Vdc IC = 25Adc, VCE = 2.0Vdc IC = 50Adc, VCE = 5.0Vdc Collector-Emitter Saturation Voltage IC = 25Adc, IB = 2.5Adc IC = 50Adc, IB = 10Adc Base-Emitter Saturation Voltage IC = 25Adc, IB = 2.5Adc Base-Emitter Voltage IC = 25Adc, VCE = 2.0Adc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal Short-Circuit, Forward Current Transfer Ratio IC = 5.0Adc, VCE = 10Vdc, f = 1.0MHz Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 10Adc, VCE = 5.0Vdc, f = 1.0kHz Output Capacitance VCB = 10Vdc, IE = 0, 0.1MHz ≤ f ≤ 1.0MHz SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time VCC = 30Vdc; IC = 25Adc; IB1 = 2.5Adc Turn-Off Time VCC = 30Vdc ; IC = 25Adc; IB1 = -IB2 = 2.5Adc SAFE OPERATING AREA DC Tests TC = +25°C, 1 Cycle, t = 1.0s Test 1 VCE = 6.0Vdc, IC = 50Adc Test 2 VCE = 30Vdc, IC = 10Adc Test 3 VCE = 50Vdc, IC = 560mAdc VCE = 60Vdc, IC = 640mAdc 2N5685 2N5686 Symbol ton toff Min. Max. 1.5 3.0 Unit μs μs Symbol |hfe| Min. Max. Unit (2) Symbol Min. Max. Unit hFE 30 15 5.0 60 VCE(sat) VBE(sat) VBE(ON) 1.0 5.0 2.0 2.0 Vdc Vdc Vdc 2.0 15 20 hfe Cobo 1200 pF (2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0% T4-LDS-0162 Rev. 1 (100546) Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PACKAGE DIMENSIONS Ltr CD CH HR HR1 HT LD LL L1 MHD MHS PS PS 1 S1 Dimensions Inches Millimeters Min Max Min Max .875 22.22 .250 .450 6.35 11.43 .495 .525 12.57 13.34 .131 .188 3.33 4.78 .060 .135 1.52 3.43 .057 .063 1.45 1.60 .312 .500 7.92 12.70 .050 1.27 .151 .165 3.84 4.19 1.177 1.197 29.90 30.40 .420 .440 10.67 11.18 .205 .225 5.21 5.72 .655 .675 16.64 17.15 Notes 3 6 4, 5, 9 4, 5, 9 5, 9 7 5 NOTE: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. * 11. Dimensions are in inches. Millimeters are given for general information only. Body contour is optional within zone defined by CD. These dimensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. When gauge is not used, measurement shall be made at seating plane. Both terminals. At both ends. Two holes. The collector shall be electrically connected to the case. LD applies between L1 and LL. Lead diameter shall not exceed twice LD within L1. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. Terminal 1 is emitter; terminal 2 is base; case is collector. * FIGURE 1. Physical dimensions (TO-3) T4-LDS-0162 Rev. 1 (100546) Page 3 of 3
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