2N7236

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/595 DEVICES LEVELS 2N7236 2N7236U JAN JANTX JANTXV Symbol VDS VGS Value -100 ± 20 -18 -11 125 (1) 0.20 (2) -55 to +150 Unit Vdc Vdc Adc Adc W Ω °C ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Drain – Source Voltage Gate – Source Voltage Continuous Drain Current TC = +25°C Continuous Drain Current TC = +100°C Max. Power Dissipation TC = +25°C Drain to Source On State Resistance Operating & Storage Temperature Note: (1) Derated Linearly by 1.0 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = -11A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = -0.25mA VDS ≥ VGS, ID = -0.25mA, Tj = +125°C VDS ≥ VGS, ID = -0.25mA, Tj = -55°C Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C Drain Current VGS = 0V, VDS = -80V VGS = 0V, VDS = -100V, Tj = +125°C VGS = 0V, VDS = -80V, Tj = +125°C Static Drain-Source On-State Resistance VGS = 10V, ID = -11A pulsed VGS = -10V, ID = -18A pulsed Tj = +125°C VGS = -10V, ID = -11A pulsed Diode Forward Voltage VGS = 0V, ID = -18A pulsed Symbol V(BR)DSS VGS(th)1 VGS(th)2 VGS(th)3 IGSS1 IGSS2 IDSS1 IDSS2 IDSS3 rDS(on)1 rDS(on)2 rDS(on)3 VSD Min. -100 Max. Unit Vdc ID1 ID2 Ptl Rds(on) Top, Tstg TO-254AA -2.0 -1.0 -4.0 -5.0 ±100 ±200 -25 -1.0 -0.25 0.20 0.22 0.34 -5.0 Vdc nAdc U-PKG (SMD-1) (TO-267AB) µAdc mAdc mAdc Ω Ω Ω Vdc T4-LDS-0061 Rev. 1 (080989) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/595 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time ID = -11A, VGS = -10Vdc, Gate drive impedance = 9.1Ω, VDD = -50Vdc di/dt ≤ 100A/µs, VDD ≤ 30V, ID = -18A Symbol td(on) tr td(off) tf trr Min. Max. 35 85 85 65 280 Unit Symbol Qg(on) Qgs Qgd Min. Max. 60 13 35.2 Unit nC VGS = -10V, ID = -18A VDS = -50V ns ns T4-LDS-0061 Rev. 1 (080989) Page 2 of 2