2N7335

2N7335 Qualified Levels: JAN, JANTX, and JANTXV QUAD P-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/599 DESCRIPTION This 2N7335 device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • MO-036AB Package JEDEC registered 2N7335. • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/599. • RoHS compliant version available (commercial grade only). APPLICATIONS / BENEFITS • • • High Frequency Operation. Lightweight. ESD to class 1A. MAXIMUM RATINGS @ TA = +25 ºC unless otherwise noted. Parameters / Test Conditions Symbol Operating & Storage Temperature Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Top , Tstg 1 die 4 die 1 die R ӨJA R ӨJC Value Unit -55 to +150 °C 90 50 17 ºC/W ºC/W Gate – Source Voltage V GS ± 20 V Continuous Drain Current @ TC = +25 °C I D1 -0.75 A Continuous Drain Current @ TC = +100 °C (1) Max. Power Dissipation @ TC = +25ºC (free air) (1, 2) Maximum Drain to Source On State Resistance @ TJ = +25 ºC @ TJ = +150 ºC Collector Efficiency I D2 -0.50 A P D1 1.4 W MAX R ds(on) Ω IS 1.4 2.5 -0.75 Single Pulse Avalanche Energy Capability E AS 75 mJ Repetitive Avalanche Energy Capability E AR .14 mJ Rated Avalanche Current (repetitive and nonrepetitive) I AR -.075 A Off-State Current I DM -3.0 A (pk) Notes: 1. Derated Linearly by 11 mW/°C for T C > +25 °C. 2. V GS = -10 V, I D = -0.5 A. T4-LDS-0215, Rev. 1 (120481) ©2012 Microsemi Corporation A MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 6 2N7335 MECHANICAL and PACKAGING • • • • • • CASE: Ceramic, lid: alloy 42, Au over Ni plating. TERMINALS: Alloy 42, Au over Ni plating, solder dipped. MARKING: Manufacturer’s ID, part number, date code. POLARITY: See package outline. WEIGHT: Approx. 1.3 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N7335 (e3) Reliability Level JAN=JAN level JANTX=JANTX level JANTXV=JANTXV level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number (See Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol ID IF TC V DD V DS V GS Drain current. Forward current. Case temperature. Drain supply voltage. Drain to source voltage. Gate to source voltage. T4-LDS-0215, Rev. 1 (120481) ©2012 Microsemi Corporation Page 2 of 6 2N7335 ELECTRICAL CHARACTERISTICS @ T A = +25°C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERTICS Drain-Source Breakdown Voltage V GS = 0 V, I D = -1m A Gate-Source Voltage (Threshold) V DS ≥ V GS , I D = -0.25mA V DS ≥ V GS , I D = -0.25 mA, T j = +125 °C V DS ≥ V GS , I D = -0.25 mA, T j = -55 °C Gate Current V GS = ±20 V, V DS = 0 V V GS = ±20 V, V DS = 0 V, T j = +125 °C Drain Current V GS = 0 V, V DS = 80 % of rated V DS V GS = 0 V, V DS = 80 % of rated V DS , T j = +125 °C Static Drain-Source On-State Resistance V GS = -10 V, cond. A pulsed per MIL-STD-750, sect. 4, I D = -0.50 A T j = +125 °C V GS = -10 V, pulsed per MIL-STD-750, section 4, I D = -0.50 A Diode Forward Voltage V GS = 0 V, I D = -0.75 A, pulsed per MIL-STD-750, section 4 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: Condition B On-State Gate Charge Gate to Source Charge Gate to Drain Charge SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: I D = -0.75 A, V GS = -10 V, Turn-on delay time Rinse time Gate drive impedance = 7.5 Ω, Turn-off delay time V DD = -50 V Fall time Diode Reverse Recovery Time T4-LDS-0215, Rev. 1 (120481) di/dt ≤ -100 A/µs, V DD ≤ -30 V, I D = -.75 A ©2012 Microsemi Corporation Symbol Min. V (BR)DSS -100 V GS(th)1 V GS(th)2 V GS(th)3 -2.0 -1.0 Max. Unit V -4.0 V -5.0 I GSS1 I GSS2 ±100 ±200 nA I DSS1 I DSS2 -25 -0.25 µA mA r DS(on)1 1.4 Ω r DS(on)2 2.3 Ω V SD 5.5 V Max. Unit Symbol Min. Q g(on) Q gs Q gd Symbol 15 7.0 8.0 Min. Max. t d(on) tr t d(off) tf 30 60 70 80 t rr 200 nC Unit ns ns Page 3 of 6 2N7335 NEGATIVE ID DRAIN CURRENT (AMPERES) GRAPHS T C CASE TEMPERATURE (°C) THERMAL RESPONSE (ZTHJA) FIGURE 1 – Maximum Drain Current vs. Case Temperature Graph T1 RECTANGULAR PULSE DURATION (SEC) FIGURE 2 – Normalized Transient Thermal Impedance T4-LDS-0215, Rev. 1 (120481) ©2012 Microsemi Corporation Page 4 of 6 2N7335 NEGATIVE ID, DRAIN CURRENT (AMPERES) GRAPHS (continued) NEGATIVE V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3 – Maximum Safe Operating Area T4-LDS-0215, Rev. 1 (120481) ©2012 Microsemi Corporation Page 5 of 6 2N7335 PACKAGE DIMENSIONS Dimensions Symbol Inches Dimensions Millimeters Notes Symbol Inches Millimeters Min Max Min Max BH .105 .175 2.67 4.45 BL .690 .770 17.53 19.56 BW .290 .325 7.37 8.26 LL .125 .175 3.18 4.45 BW 1 .280 .310 7.11 7.87 10 LL 1 .000 .030 0.00 0.76 LH .025 .055 0.64 1.40 11 α 0° 15° 0° 15° LT .008 .012 0.203 0.305 R .010 LW .015 .021 0.381 0.533 S .030 LW 1 .038 .060 0.97 1.52 N Min 11 Max Min Notes Max LS .300 TP 7.62 TP 5, 6 LS1 .100 TP 2.54 TP 5, 6 11 7 0.25 .095 14 0.76 2.41 14 8 NOTES: 1. 2. 3. 4. 5. 6. 7. 8. 9. Dimensions are in inches. Millimeters are given for general information only. Refer to applicable symbol list. Dimensioning and tolerancing in accordance with ASME Y14.5. Leads within +/- .005 inch (0.13 mm) radius of True Position (TP) at gauge plane with maximum material condition and unit installed. LS 1 and LS applies in zone LL 1 when unit installed. α applies to spread leads prior to installation. N is the number of terminal positions. Outlines on which the seating plane is coincident with the base plane (A 1 = 0), terminals lead standoffs are not required, and LW1 may equal LW along any part of the lead above the seating/base plane. 10. BW 1 does not include particles of package materials. 11. This dimension shall be measured with the device seated in the seating plane gauge JEDEC Outline No. GS-3. T4-LDS-0215, Rev. 1 (120481) ©2012 Microsemi Corporation Page 6 of 6