APT25GN120S

TYPICAL PERFORMANCE CURVES 1200V APT25GN120B_S(G) APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. (B) TO -2 47 D3PAK C G E (S) G C E • 1200V Field Stop • Trench Gate: Low VCE(on) • Easy Paralleling • Integrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT25GN120B(G) UNIT Volts 1200 ±30 67 33 75 75A @ 1200V 272 -55 to 150 300 Amps Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 150µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX Units 1200 5 1.4 5.8 1.7 1.9 100 2 6.5 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125°C) 2.1 I CES I GES RG(int) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 µA nA Ω 9-2009 050-7600 Rev E Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) Integrated Gate Resistor TBD 600 8 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT25GN120B_S(G) Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V I C = 25A TJ = 150°C, R G = 4.3Ω 7, VGE = 15V, L = 100µH,VCE = 1200V Inductive Switching (25°C) VCC = 800V VGE = 15V I C = 25A 4 5 MIN TYP MAX UNIT 1800 105 85 9.5 155 10 85 75 22 17 280 135 TBD 1490 2150 22 17 335 225 TBD 2390 3075 mJ ns ns A nC V pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy RG = 1.0Ω 7 TJ = +25°C Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 44 6 mJ Inductive Switching (125°C) VCC = 800V VGE = 15V I C = 25A RG = 1.0Ω 7 55 Turn-on Switching Energy (Diode) Turn-off Switching Energy 66 TJ = +125°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C/W gm .46 N/A 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 9-2009 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 050-7600 Rev E TYPICAL PERFORMANCE CURVES 80 70 IC, COLLECTOR CURRENT (A) 60 50 40 10V 30 20 10 0 9V 8V 7V 0 5 10 15 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST