APT2X101S20J

2 2 3 3 4 1 1 4 Parallel SO 2 T- 27 APT2X101S20J "UL Recognized" APT2X101S20J 200V 120A ISOTOP fi file # E145592 DUAL DIE ISOTOP® PACKAGE HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS • Rectifiers in Switchmode Power Supplies (SMPS) • Free Wheeling Diode in Low Voltage Converters PRODUCT FEATURES • • • • Ultrafast Recovery Times Soft Recovery Characteristics Popular SOT-227 Package Rugged Avalanche Energy Rated • Low Forward Voltage • High Blocking Voltage • Low Leakage Current PRODUCT BENEFITS • • • • • Low Losses Low Noise Switching Cooler Operation Higher Reliability Systems Increased System Power Density MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG EAVL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage All Ratings: TC = 25°C unless otherwise specified. APT2X101S20J UNIT 200 Volts Maximum Average Forward Current (TC = 105°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Operating and StorageTemperature Range Avalanche Energy (2A, 50mH) 120 213 1000 -55 to 150 100 °C mJ Amps STATIC ELECTRICAL CHARACTERISTICS Symbol IF = 100A VF Forward Voltage IF = 200A IF = 100A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V Microsemi Website - http://www.microsemi.com MIN TYP MAX UNIT .89 1.06 .76 .95 Volts VR = 200V, TJ = 125°C 40 470 053-6023 Rev C pF 7-2006 VR = 200V 2 mA DYNAMIC CHARACTERISTICS Symbol trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 100A, diF/dt = -700A/µs VR = 133V, TC = 125°C IF = 100A, diF/dt = -200A/µs VR = 133V, TC = 125°C Test Conditions IF = 100A, diF/dt = -200A/µs VR = 133V, TC = 25°C MIN TYP APT2X101S20J MAX UNIT ns nC 70 240 6 110 690 11 95 1750 32 - - Amps ns nC Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC VIsolation WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight MIN TYP MAX UNIT °C/W Volts .33 2500 1.03 29.2 10 1.1 oz g lb•in N•m Torque Maximum Terminal & Mounting Torque Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.35 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.30 0.25 0.20 D = 0.9 0.7 0.5 0.15 0.10 0.05 0 0.3 Note: PDM t1 t2 0.1 0.05 10-5 10-4 SINGLE PULSE 10-3 10-2 10-1 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 1.0 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TJ ( C) 0.0673 Dissipated Power (Watts) 0.0182 0.361 5.17 0.188 TC ( C) 0.0743 053-6023 Rev C 7-2006 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL ZEXT TYPICAL PERFORMANCE CURVES 360 300 IF, FORWARD CURRENT (A) trr, REVERSE RECOVERY TIME (ns) 120 100 80 60 40 20 0 TJ = 125°C VR = 133V APT2X101S20J 100A 130A 50A 240 180 120 TJ = 125°C 60 0 TJ = 150°C 0 TJ = -55°C TJ = 25°C 0.5 1.0 1.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage IRRM, REVERSE RECOVERY CURRENT (A) TJ = 125°C VR = 133V 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 40 35 30 25 20 15 10 5 0 50A 100A TJ = 125°C VR = 133V 2500 Qrr, REVERSE RECOVERY CHARGE (nC) 2000 130A 100A 130A 1500 1000 50A 500 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Qrr t rr t rr I RRM IF(AV) (A) 0 0 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 250 Duty cycle = 0.5 TJ = 150°C Kf, DYNAMIC PARAMETERS (Normalized to 700A/µs) 200 150 Qrr 100 50 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 6000 5000 4000 3000 2000 1000 0 0 75 100 125 150 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 200 100 PEAK AVALANCHE CURRENT (A) 0 25 50 CJ, JUNCTION CAPACITANCE (pF) 50 10 5 7-2006 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 1 1 1 10 100 1000 2500 Time in Avalanche (µs) Figure 9. Single Pulse UIS SOA 053-6023 Rev C APT2X101S20J Vr +18V 0V D.U.T. 30µH trr/Qrr Waveform diF /dt Adjust APT20M20LLL PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 0.25 IRRM 5 Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) 7-2006 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) Parallel APT2X101S20J Cathode 1 Anode 1 053-6023 Rev C Dimensions in Millimeters and (Inches) Cathode 2 Anode 2 ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.