APT33N90JCCU3

APT33N90JCCU3 ISOTOP® Buck chopper Super Junction MOSFET SiC chopper diode D VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 33A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies Features • G S - Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated A S D A • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • • ISOTOP® Package (SOT-227) Very low stray inductance High level of integration G ISOTOP® Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 900 33 25 75 ±20 120 290 8.8 2.9 1940 Unit V A V mΩ W A mJ September, 2009 1–5 APT33N90JCCU3 – Rev 0 Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APT33N90JCCU3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V Min Tj = 25°C Tj = 125°C 2.5 Typ 500 100 3 Max 100 120 3.5 100 Unit µA mΩ V nA VGS = 10V, ID = 26A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 100V f = 1MHz VGS = 10V VBus = 400V ID = 26A Inductive Switching (125°C) VGS = 10V VBus = 600V ID = 26A RG = 7.5Ω Inductive switching @ 25°C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5Ω Min Typ 6.8 0.33 270 32 115 70 20 400 25 0.9 0.75 1.3 0.85 mJ mJ ns nC Max Unit nF SiC chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 10A Test Conditions VR=1200V Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C Min 1200 Typ 32 56 10 1.6 2.3 40 96 69 Max 200 1000 1.8 3 Unit V µA A V September, 2009 2–5 APT33N90JCCU3 – Rev 0 IF = 10A, VR = 600V di/dt =500A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V nC pF www.microsemi.com APT33N90JCCU3 Thermal and package characteristics Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol