APT34F60B APT34F60S
600V, 34A, 0.21Ω Max, trr ≤250ns
N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
TO
-2
47
D3PAK
APT34F60B
APT34F60S
D
Single die FREDFET
G S
FEATURES
• Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full full bridge • Half bridge • PFC and other boost converter • Buck converter • Single and two switch forward • Flyback
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 34 21 124 ±30 930 17
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RθJC RθCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight 0.22 6.2 10 1.1 -55 0.15 150 300 Min Typ Max 624 0.20 Unit W °C/W
°C
9-2006 050-8074 Rev A
oz g in·lbf N·m
Torque
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Microsemi Website - http://www.microsemi.com
Static Characteristics
Symbol
VBR(DSS) ∆VBR(DSS)/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS
TJ = 25°C unless otherwise specified
Test Conditions
VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 17A
APT34F60B_S
Typ 0.57 0.17 4 -10 Max Unit V V/°C Ω V mV/°C µA nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 600
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
VGS = VDS, ID = 1mA VDS = 600V VGS = 0V TJ = 25°C TJ = 125°C
3
0.21 5 100 500 ±100
VGS = ±30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ = 25°C unless otherwise specified
Test Conditions VDS = 50V, ID = 17A
VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 32 6640 70 610 325
Max
Unit S
pF
5
VGS = 0V, VDS = 0V to 400V
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 17A, VDS = 300V Resistive Switching VDD = 400V, ID = 17A RG = 4.7Ω 6 , VGG = 15V
170 165 36 70 37 43 115 34 nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr Irrm dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 100
Unit A
G S
TJ = 25°C TJ = 125°C
124 1.0 250 525 10 25 9 12 20 V ns µC A V/ns
ISD = 17A, TJ = 25°C, VGS = 0V
ISD = 17A 3 diSD/dt = 100A/µs
TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C
ISD ≤ 17A, di/dt ≤1000A/µs, VDD = 400V, TJ = 125°C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 6.44mH, RG = 4.7Ω, IAS = 17A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
9-2006 Rev A
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.03E-8/VDS^2 + 2.80E-8/VDS + 9.89E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-8074
120 100 ID, DRAIN CURRENT (A)
V
GS
= 10V
60
TJ = -55°C
APT34F60B_S
T = 125°C
J
V
GS
= 7&8V
50 ID, DRIAN CURRENT (A) 40 30 20
5.5V 6V
80
TJ = 25°C
60 40 20 0
TJ = 150°C
TJ = 125°C
10
5V
30 25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics
NORMALIZED TO VGS = 10V @ 17A
0
0
30 25 20 15 10 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
3.0 2.5 2.0 1.5 1.0 0.5
120 100 ID, DRAIN CURRENT (A) 80
VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @