APT50M50L2LL
500V 89A 0.050Ω
POWER MOS 7
®
R
MOSFET
TO-264 Max
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
• Increased Power Dissipation • Easier To Drive • Popular TO-264 MAX Package
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT50M50L2LL UNIT Volts Amps
500 89 356 ±30 ±40 893 7.14 -55 to 150 300 89 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
500 0.050 100 500 ±100 3 5
(VGS = 10V, 44.5A)
Ohms µA nA Volts
2-2004 050-7043 Rev C
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT50M50L2LL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 89A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 89A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 333V, VGS = 15V ID = 89A, RG = 3Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 333V, VGS = 15V ID = 89A, RG = 3Ω
MIN
TYP
MAX
UNIT
10550 2060 105 200 50 105 24 22 56 8 1490 1650 2105 1835 µJ ns
nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns µC
89 356 1.3 680 17.0 8
(Body Diode) (VGS = 0V, IS = - 89A)
Reverse Recovery Time (IS = -89A, dl S/dt = 100A/µs) Reverse Recovery Charge (IS = -89A, dl S/dt = 100A/µs) Peak Diode Recovery
d v/ dt 5
V/ns
THERMAL CHARACTERISTICS
Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
0.14 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.81mH, RG = 25Ω, Peak IL = 89A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -89A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.16
Z JC, THERMAL IMPEDANCE (°C/W) θ
0.14 0.9 0.12 0.10 0.08 0.06 0.3 0.04 0.02 0 10-5 0.1 0.05 10-4 SINGLE PULSE 1.0 0.7
0.5
Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC
050-7043 Rev C
2-2004
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
200 180
ID, DRAIN CURRENT (AMPERES)
APT50M50L2LL
15 &10V 7.5V 7V
160 140 120 100 80 60 40 20 0
RC MODEL Junction temp. (°C) 0.0622 Power (watts) 0.0778 Case temperature. (°C) 0.209F 0.0191F
6.5V
6V
5.5V 5V
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 180 160
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @
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