APTC90H12T1G

APTC90H12T1G Full - Bridge Super Junction MOSFET Power Module 3 Q1 5 6 Q2 7 1 Q4 9 4 Q3 2 VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 8 11 NTC 10 • 12 • • Pins 3/4 must be shorted together Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 900 30 23 75 ±20 120 250 8.8 2.9 1940 Unit V A V mΩ W A mJ August, 2009 1–5 APTC90H12T1G – Rev 0 Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTC90H12T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V Min Tj = 25°C Tj = 125°C 2.5 Typ 500 100 3 Max 100 120 3.5 100 Unit µA mΩ V nA VGS = 10V, ID = 26A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 100V f = 1MHz VGS = 10V VBus = 400V ID = 26A Inductive Switching (125°C) VGS = 10V VBus = 600V ID = 26A RG = 7.5Ω Inductive switching @ 25°C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5Ω Min Typ 6.8 0.33 270 32 115 70 20 400 25 1.5 0.75 2.1 0.85 mJ ns nC Max Unit nF mJ Source - Drain diode ratings and characteristics Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C VGS = 0V, IS = - 26A IS = - 26A Tj = 25°C VR = 400V Tj = 25°C diS/dt = 200A/µs 0.8 920 30 Min Typ Max 30 23 1.2 Unit A V ns µC www.microsemi.com 2–5 APTC90H12T1G – Rev 0 August, 2009 APTC90H12T1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol