APTGF90DA60T1G
Boost chopper NPT IGBT Power Module
5 6
VCES = 600V IC = 90A @ Tc = 80°C
Application
11
CR1
• • •
AC and DC motor control Switched Mode Power Supplies Power Factor Correction
3 4 Q2 CR2 9 10 1 2 12
Features
NTC
•
• • • Benefits • • • • • •
Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance Internal thermistor for temperature monitoring High level of integration
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 600 110 90 315 ±20 416 200A @ 600V Unit V A V W
August, 2007 1–6 APTGF90DA60T1G – Rev 0
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
APTGF90DA60T1G
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Tj = 25°C VGE = 0V VCE = 600V Tj = 125°C Tj = 25°C VGE =15V IC = 90A Tj = 125°C VGE = VCE, IC = 1mA VGE = 20 V, VCE = 0V Min Typ Max 250 500 2.5 5 ±150 Unit µA V V nA
2.0 2.2 3
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC = 90A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω VGE = 15V Tj = 125°C VBus = 400V IC = 90A Tj = 125°C RG = 5 Ω Min Typ 4300 470 400 330 290 200 26 25 150 30 26 25 170 40 4.3 mJ 3.5 Max Unit pF
nC
ns
ns
Chopper diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C IF = 100A IF = 200A IF = 100A IF = 100A VR = 400V di/dt =200A/µs
Min 600
Typ
Max 100 500
Unit V µA A V ns nC
August, 2007 2–6 APTGF90DA60T1G – Rev 0
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
VR=600V
Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
100 1.6 2 1.3 160 220 290 1530
2
www.microsemi.com
APTGF90DA60T1G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.3 0.55 150 125 100 4.7 80 Unit
°C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol
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