APTGT100TDU120TPG

APTGT100TDU120TPG Triple Dual Common Source Fast Trench + Field Stop IGBT Power Module VCES = 1200V IC = 100A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Very low (12mm) profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability • RoHS Compliant C1 C3 C5 G1 NTC1 NTC2 E1/E2 E1 E2 G2 E3/E4 G3 E3 E4 G4 E5/E6 G5 E5 E6 G6 C2 C4 C6 Absolute maximum ratings TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C May, 2009 1-5 APTGT100TDU120TPG – Rev 0 Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Max ratings 1200 140 100 200 ±20 480 200A @ 1100V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT100TDU120TPG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Min 1.4 5.0 Typ 1.7 2.0 5.8 Max 250 2.1 6.5 400 Unit µA V V nA Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 100A RG = 3.9Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 100A RG = 3.9Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 100A Tj = 125°C RG = 3.9Ω Min Typ 7200 400 300 260 30 420 70 290 50 520 90 10 mJ 10 Max Unit pF ns ns Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 100A VR = 600V IF = 100A VGE = 0V Test Conditions VR=1200V Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1200 Typ Max 250 500 100 1.6 1.6 170 280 9 18 5 9 2.1 Unit V µA A V ns µC mJ May, 2009 2-5 APTGT100TDU120TPG – Rev 0 di/dt =2000A/µs www.microsemi.com APTGT100TDU120TPG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B 25/85 ∆B/B Characteristic Resistance @ 25°C T25 = 298.15 K TC=100°C RT = R25 ⎡ ⎛1 exp ⎢ B25 / 85 ⎜ ⎜ T − T ⎟⎥ ⎟ ⎝ 25 ⎠⎦ ⎣ T: Thermistor temperature 1 ⎞⎤ RT: Thermistor value at T Min Typ 50 5 3952 4 Max Unit kΩ % K % Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 3 Min Typ Max 0.26 0.48 175 125 100 5 250 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol