APTGT150DH120G

APTGT150DH120G Asymmetrical - Bridge Fast Trench + Field Stop IGBT® Power Module VBUS Q1 G1 CR3 VCES = 1200V IC = 150A @ Tc = 80°C Applicatio n • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant E1 OUT1 OUT2 Q4 G4 CR2 E4 0/VBUS OUT1 G1 E1 VBUS 0/VBUS E4 G4 OUT2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Reverse Bias Safe Operating Area 300A @ 1150V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT150DH120G – Rev 1 July, 2006 Max ratings 1200 220 150 350 ±20 690 Unit V A V W APTGT150DH120G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V, VCE = 1200V Tj = 25°C VGE = 15V IC = 150A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0 V Min Typ 1.7 2.0 5.8 Max 350 2.1 6.5 400 Unit µA V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0 V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 150A R G = 2.2Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 150A R G = 2.2Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 150A Tj = 125°C R G = 2.2Ω Min Typ 10.7 0.56 0.48 280 40 420 75 290 45 520 90 14 Max Unit nF ns ns mJ 16 Diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1200 Typ Max 250 600 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1200V IF = 150A 150 1.6 1.6 170 280 14 28 6 11 2.1 V ns July, 2006 2-5 APTGT150DH120G – Rev 1 IF = 150A VR = 600V di/dt =2500A/µs µC mJ www.microsemi.com APTGT150DH120G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.18 0.30 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol