APTLGF350A608G

APTLGF350A608G Phase leg Intelligent Power Module VCES = 600V IC = 350A @ Tc = 80°C Application • Motor control • Uninterruptible Power Supplies • Switched Mode Power Supplies • Amplifier Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA & SCSOA rated • Integrated Fail Safe IGBT Protection (Driver) - Top Bottom input signals Interlock - Isolated DC/DC Converter • Low stray inductance • M5 power connectors • High level of integration VBUS 0/VBUS OUT These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTLGF350A608G – Rev 1 February, 2011 Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Very high noise immunity (common mode rejection > 25kV/µs) • Galvanic Isolation: 3750V for the optocoupler 2500V for the transformer • 5V logic level with Schmitt-trigger Input • Single VDD=5V supply required • Secondary auxiliary power supplies internally generated (15V, -6V) • Optocoupler qualified to AEC-Q100 test quidelines • RoHS compliant INL INH GND GND VDD VDD APTLGF350A608G All ratings @ Tj = 25°C unless otherwise specified 1. Inverter Power Module Absolute maximum ratings Symbol VCES IC ICM PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 600 430 350 700 1562 800A@550V Unit V A W Electrical Characteristics Symbol Characteristic ICES VCE(sat) Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Test Conditions VGE = 0V VCE = 600V VDD = VIN = 5V IC = 400A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min Typ Max 0.5 1.5 2.5 Unit mA V 2 2.2 Dynamic Characteristics Symbol Cies Coes Cres Tr Tf Tr Tf Eon Eoff Isc RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Rise Time Fall Time Rise Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Junction to Case thermal resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VDD = VIN = 5V VBus = 400V ; IC = 400A Inductive Switching (125°C) VDD = VIN = 5V VBus = 400V IC = 400A VDD = VIN = 5V; VBus =360V tp ≤ 10µs ; Tj = 125°C Min Typ 17.2 1.88 1.6 25 30 25 45 17.2 14 1800 0.08 Max Unit nF ns ns mJ A °C/W www.microsemi.com 2-7 APTLGF350A608G – Rev 1 February, 2011 APTLGF350A608G Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr RthJC Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Min 600 Typ Max 100 2000 Unit V µA A Maximum Reverse Leakage Current DC Forward Current VR=600V 240 1.7 2 2.3 IF = 240A Diode Forward Voltage IF = 480A IF = 240A Reverse Recovery Time Reverse Recovery Charge Junction to Case Thermal Resistance IF = 240A VR = 400V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C V di/dt = 800A/µs 1.4 70 140 400 2760 0.22 ns nC °C/W 2. Driver Absolute maximum ratings Symbol VDD VINi IVDDmax fmax Parameter Supply Voltage Input signal voltage i=L, H VINi = 0V, i =L & H VDD=5V, VINH = /VINL ; Fout = 60kHz Maximum Switching Frequency Maximum Supply current Max ratings 5.5 5.5 0.35 2 60 Unit V A kHz Driver Electrical Characteristics Symbol VDD VINi(max) VINi (th+) VINi(th-) RINi Td(on) DT Td(off) PWD PDD VISOL Characteristic Operating Supply Voltage Maximum Input Voltage Positive Going Threshold Voltage Negative Going Threshold Voltage Input Resistance * Turn On delay time Built in dead time Turn Off delay time Pulse Width Distortion Propagation Delay Difference between any two driver Primary to Secondary Isolation Test Conditions Min 4.5 -0.5 Typ 5 5 3.2 1 1 1100 600 750 Max 5.5 5.5 Unit V V kΩ ns 300 Td(on) - Td(off) -350 2500 350 ns APTLGF350A608G – Rev 1 February, 2011 i = L, H Driver + IGBT Driver + IGBT VRMS * Low impedance guarantees good noise immunity. Including built in dead time. www.microsemi.com 3-7 APTLGF350A608G 3. Package characteristics Symbol VISOL TJ TOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol