APTLGL325A1208G

APTLGL325A1208G Phase leg Intelligent Power Module VCES = 1200V IC = 325A @ Tc = 80°C Application • Motor control • Uninterruptible Power Supplies • Switched Mode Power Supplies • Amplifier Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - RBSOA and SCSOA rated • Integrated Fail Safe IGBT Protection (Driver) - Top Bottom input signals Interlock - Isolated DC/DC Converter • Low stray inductance • M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Very high noise immunity (common mode rejection > 25kV/µs) • Galvanic Isolation: 3750V for the optocoupler 2500V for the transformer • 5V logic level with Schmitt-trigger Input • Single VDD=5V supply required • Secondary auxiliary power supplies internally generated (15V, -6V) • Optocoupler qualified to AEC-Q100 test quidelines • RoHS compliant VBUS 0/VBUS OUT INL INH GND GND VDD VDD These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTLGL325A1208G – Rev 0 February, 2011 APTLGL325A1208G All ratings @ Tj = 25°C unless otherwise specified 1. Inverter Power Module Absolute maximum ratings Symbol VCES IC ICM PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 150°C Max ratings 1200 420 325 600 1500 600A @ 1150V Unit V A W Electrical Characteristics Symbol Characteristic ICES VCE(sat) Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Test Conditions VGE = 0V VCE = 1200V VDD = VIN = 5V IC = 300A Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Min Typ Max 500 750 2.2 Unit µA V 1.85 2.2 Dynamic Characteristics Symbol Cies Coes Cres Tr Tf Tr Tf Eon Eoff Isc RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Rise Time Fall Time Rise Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Junction to Case thermal resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VDD = VIN = 5V VBus = 600V ; IC = 300A Inductive Switching (150°C) VDD = VIN = 5V VBus = 600V IC = 300A VDD = VIN = 5V; VBus =900V tp ≤ 10µs ; Tj = 150°C Min Typ 17.6 1.16 0.94 30 70 40 80 34 29 1100 0.1 Max Unit nF ns ns mJ A °C/W www.microsemi.com 2-6 APTLGL325A1208G – Rev 0 February, 2011 APTLGL325A1208G Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 300A VR = 600V IF = 300A Test Conditions VR=1200V Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Min 1200 Typ Max 250 750 360 1.7 1.65 155 300 29 61 10.4 22 0.17 2.2 Unit V µA A V ns µC mJ °C/W di/dt =7000A/µs 2. Driver Absolute maximum ratings Symbol VDD VINi IVDDmax fmax Parameter Supply Voltage Input signal voltage i=L, H VINi = 0V, i =L & H VDD=5V, VINH = /VINL ; Fout = 55kHz Maximum Switching Frequency Maximum Supply current Max ratings 5.5 5.5 0.35 2 55 Unit V A kHz Driver Electrical Characteristics Symbol VDD VINi(max) VINi (th+) VINi(th-) RINi Td(on) DT Td(off) PWD PDD VISOL Characteristic Operating Supply Voltage Maximum Input Voltage Positive Going Threshold Voltage Negative Going Threshold Voltage Input Resistance * Turn On delay time Built in dead time Turn Off delay time Pulse Width Distortion Propagation Delay Difference between any two driver Primary to Secondary Isolation Test Conditions Min 4.5 -0.5 Typ 5 5 3.2 1 1 1100 600 750 Max 5.5 5.5 Unit V V kΩ ns 300 Td(on) - Td(off) -350 2500 350 ns VRMS APTLGL325A1208G – Rev 0 February, 2011 i = L, H Driver + IGBT Driver + IGBT * Low impedance guarantees good noise immunity. Including built in dead time. www.microsemi.com 3-6 APTLGL325A1208G 3. Package characteristics Symbol VISOL TJ TOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol