APTM20DAM04G

APTM20DAM04G Boost chopper MOSFET Power Module VBUS CR1 VDSS = 200V RDSon = 4mΩ typ @ Tj = 25°C ID = 372A @ Tc = 25°C Applicatio n • • • AC and DC motor control Switched Mode Power Supplies Power Factor Correction OUT Features Q2 • G2 S2 0/VBUS • • • Benefits S2 G2 VBUS 0/VBUS O UT Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration • • • • • Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Max ratings 200 372 278 1488 ±30 5 1250 100 50 3000 Unit V A V mΩ W A mJ Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM20DAM04G – Rev 2 July, 2006 APTM20DAM04G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Typ Tj = 25°C T j = 125°C VGS = 10V, ID = 186A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0 V 4 3 Max 500 2000 5 5 ±200 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 372A Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 372A R G = 1.2Ω Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 372A, R G = 1.2 Ω Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 372A, R G = 1.2 Ω Min Typ 28.9 9.32 0.58 560 212 268 32 64 88 116 3396 3716 3744 3944 Max Unit nF nC ns µJ µJ Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Min 200 Typ Max 250 750 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=200V IF = 300A IF = 600A IF = 300A IF = 300A VR = 133V di/dt = 600A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 300 1 1.4 0.9 60 110 600 2520 1.1 V Qrr Reverse Recovery Charge nC www.microsemi.com 2–6 APTM20DAM04G – Rev 2 July, 2006 trr Reverse Recovery Time ns APTM20DAM04G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.1 0.2 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle ID, Drain Current (A) 1000 800 600 400 200 0 TJ=25°C TJ=125°C TJ=-55°C 0 4 8 12 16 20 24 28 0 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) Normalized to V GS=10V @ 186A 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 400 350 300 250 200 150 100 50 0 25 50 75 100 125 150 July, 2006 4–6 APTM20DAM04G – Rev 2 1.1 1 VGS=10V VGS=20V 0.9 0.8 0 100 200 300 400 500 600 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com APTM20DAM04G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 10000 VGS=10V ID= 186A 1000 limited by RDSon 100µs 1ms 100 Single pulse TJ=150°C TC=25°C 1 10ms 100ms 10 1 10 100 1000 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 I D=372A V DS=40V 12 TJ =25°C 10 8 6 4 2 0 0 80 160 240 320 400 480 560 640 Gate Charge (nC) July, 2006 VDS=100V VDS=160V 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–6 APTM20DAM04G – Rev 2 APTM20DAM04G Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 0 100 200 300 400 500 I D, Drain Current (A) 600 VDS=133V RG=1.2Ω T J=125°C L=100µH Rise and Fall times vs Current 160 140 t r and tf (ns) V DS=133V R G=1.2Ω T J=125°C L=100µH t d(off) 120 100 80 60 40 20 0 0 tf t d(on) tr 100 200 300 400 500 ID, Drain Current (A) 600 Switching Energy vs Current 8 Switching Energy (mJ) 6 4 2 Eoff 0 0 100 200 300 400 500 600 I D, Drain Current (A) Operating Frequency vs Drain Current VDS=133V D=50% RG=1.2Ω T J=125°C T C=75°C ZVS ZCS Hard switching VDS=133V RG=1.2Ω TJ=125°C L=100µH Switching Energy vs Gate Resistance 12 V DS=133V ID=372A T J=125°C L=100µH Eoff Eon 10 8 6 4 2 0 Eon and Eoff ( mJ) Eoff Eon 2.5 5 7.5 10 12.5 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 TJ=150°C 350 300 Frequency (kHz) 250 200 150 100 50 0 50 100 150 200 250 300 350 I D, Drain Current (A) 100 TJ =25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM20DAM04G – Rev 2