APTM50AM19FG

APTM50AM19FG Phase leg MOSFET Power Module VBUS Q1 VDSS = 500V RDSon = 19mΩ typ @ Tj = 25°C ID = 163A @ Tc = 25°C Applicatio n • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control G1 OUT S1 Q2 Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration G2 S2 0/VBUS • • • G1 S1 VBUS 0/VBUS OUT Benefits • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant S2 G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM50AM19FG– Rev 2 Max ratings 500 163 122 652 ±30 22.5 1136 46 50 2500 Unit V A V mΩ W A mJ July, 2006 APTM50AM19FG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Typ Tj = 25°C T j = 125°C VGS = 10V, ID = 81.5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0 V 19 3 Max 200 1000 22.5 5 ±200 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 163A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 163A R G = 1Ω Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 163A, R G = 1 Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 163A, R G = 1 Ω Min Typ 22.4 4.8 0.36 492 132 260 18 35 87 77 3020 2904 4964 3384 Max Unit nF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0 V, IS = - 163A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 233 499 7.6 22.8 Max 163 122 1.3 15 Unit A V V/ns ns µC July, 2006 2–6 APTM50AM19FG– Rev 2 IS = -163A VR = 333V diS/dt = 400A/µs dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 163A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com APTM50AM19FG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 600 500 400 300 200 100 0 0 8V 7.5V 7V 6.5V 6V 5.5V 400 300 200 T J=25°C 100 T J=125°C 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current I D, DC Drain Current (A) Normalized to VGS=10V @ 81.5A VGS=10V TJ=-55°C 25 0 1 2 3 4 5 6 7 8 VGS , Gate to Source Voltage (V) DC Drain Current vs Case Temperature 180 160 140 120 100 80 60 40 20 0 RDS(on) Drain to Source ON Resistance 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0 V GS=20V 100 200 300 400 25 ID, Drain Current (A) 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 www.microsemi.com 4–6 APTM50AM19FG– Rev 2 APTM50AM19FG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS (TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss VGS , Gate to Source Voltage (V) 1000 limited by R DSon 2.5 2.0 1.5 1.0 0.5 0.0 ON resistance vs Temperature VGS =10V ID=81.5A -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 100µs 100 limited by RDSon 10 Single pulse TJ =150°C TC=25°C 1 1ms 10ms 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 V DS =100V I D=163A 12 T =25°C J V =250V DS 10 8 6 4 2 0 0 80 160 240 320 400 480 560 640 Gate Charge (nC) July, 2006 VDS=400V 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 www.microsemi.com 5–6 APTM50AM19FG– Rev 2 APTM50AM19FG Delay Times vs Current 100 td(off) Rise and Fall times vs Current 120 100 VDS=333V RG=1Ω TJ=125°C L=100µH t d(on) and td(off) (ns) 80 60 40 20 0 20 60 100 140 180 220 ID, Drain Current (A) 260 V DS =333V RG =1Ω T J=125°C L=100µH td(on) tf tr and t f (ns) 80 60 40 20 0 20 tr 60 100 140 180 220 260 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 10 Switching Energy (mJ) 16 Switching Energy (mJ) 8 6 4 2 0 VDS=333V RG=1Ω T J=125°C L=100µH Eon 14 12 10 8 6 4 2 0 0 V DS=333V ID=163A T J=125°C L=100µH Eoff Eoff Eon Eoff 20 60 100 140 180 220 260 2.5 5 7.5 10 12.5 I D, Drain Current (A) Operating Frequency vs Drain Current Gate Resistance (Ohms) Source to Drain Diode Forward Voltage TJ=150°C 350 Frequency (kHz) 300 250 200 150 100 50 0 0 20 40 60 80 VDS=333V D=50% RG=1Ω TJ=125°C TC=75°C ZCS ZVS IDR, Reverse Drain Current (A) 400 1000 100 10 T J=25°C Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 100 120 140 ID, Drain Current (A) Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM50AM19FG– Rev 2 M icrosemi reserves the right to change, without notice, the specifications and information contained herein