APTM50UM09FAG

APTM50UM09FAG Single Switch MOSFET Power Module SK S D DK G VDSS = 500V RDSon = 9 m typ @ Tj = 25°C ID = 497A @ Tc = 25°C Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies  Motor control Features  Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged  Kelvin source for easy drive  Very low stray inductance  M5 power connectors  High level of integration  AlN substrate for improved thermal performance Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Low profile  RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 497 371 1988 ±30 10 5000 71 50 3000 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1–7 APTM50UM09FAG Rev 3 August, 2017 Symbol VDSS APTM50UM09FAG Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 500V VGS = 10V, ID = 248.5A VGS = VDS, ID = 30mA VGS = ±30 V, VDS = 0V Min Typ 9 3 Max 600 10 5 ±450 Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Unit nF 300 nC 630 21 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 497A RG = 0.5 Turn-off Delay Time Max 1200 VGS = 10V VBus = 250V ID =497A Rise Time Typ 63.3 12.4 0.63 42 ns 96 100 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 497A, RG = 0.5Ω 6 mJ 6.2 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 497A, RG = 0.5Ω 9.48 mJ 6.96 0.025 °C/W Max 497 371 1.3 18 300 Unit Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 497A IS = - 497A VR = 333V diS/dt = 600A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 600 15.6 60 A V V/ns ns µC  dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR  VDSS Tj  150°C IS  - 497A di/dt  700A/µs www.microsemi.com 2–7 APTM50UM09FAG Rev 3 August, 2017 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery  APTM50UM09FAG Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature To Heatsink M6 Mounting torque For teminals M5 Package Weight Min 4000 -40 -40 -40 -40 3 2 Max 150 TJmax -25 125 125 5 3.5 300 Unit V °C N.m g Package outline (dimensions in mm) www.microsemi.com 3–7 APTM50UM09FAG Rev 3 August, 2017 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM50UM09FAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.03 0.025 0.9 0.02 0.7 0.015 0.5 0.01 0.3 0.005 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 7.5V 900 6.5V 600 6V 300 5.5V 720 600 480 360 TJ=25°C 240 TJ=125°C TJ=-55°C 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 520 Normalized to VGS=10V @ 248.5A 1.3 ID, DC Drain Current (A) 1.2 VGS=10V 1.1 1 VGS=20V 0.9 0.8 416 312 208 104 0 0 180 360 540 720 900 1080 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4–7 APTM50UM09FAG Rev 3 August, 2017 RDS(on) Drain to Source ON Resistance 0 840 120 5V 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 960 7V ID, Drain Current (A) ID, Drain Current (A) VGS=10&15V 1.4 Transfert Characteristics 1080 1200 1.15 1.05 0.95 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=248.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0.9 0.8 0.7 75 100 125 150 limited by RDSon 1000 100 us 100 1 ms Single pulse TJ=150°C TC=25°C 10 10 ms 1 0.6 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Coss 10000 Crss 1000 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 50 Maximum Safe Operating Area 10000 1.2 1.0 25 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.1 0 14 VDS=100V ID=497A TJ=25°C 12 VDS=250V 10 VDS=400V 8 6 4 2 0 0 250 500 750 1000 1250 1500 Gate Charge (nC) 5–7 APTM50UM09FAG Rev 3 August, 2017 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature RDS(on), Drain to Source ON resistance (Normalized) APTM50UM09FAG APTM50UM09FAG Delay Times vs Current Rise and Fall times vs Current 70 VDS=333V RG=0.5Ω TJ=125°C L=100µH 120 td(off) 50 10 100 200 300 400 500 600 700 800 80 tr 0 100 200 300 400 500 600 700 800 ID, Drain Current (A) ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 12 38 VDS=333V RG=0.5Ω TJ=125°C L=100µH Switching Energy (mJ) Switching Energy (mJ) 18 15 Eon Eoff 9 6 3 30 26 18 10 ZCS 50 ZVS Hard switching 0 IDR, Reverse Drain Current (A) Frequency (kHz) 300 100 Eoff 0 Operating Frequency vs Drain Current VDS=333V D=50% RG=0.5Ω TJ=125°C TC=75°C Eon 14 1 2 3 4 5 6 7 8 9 Gate Resistance (Ohms) 350 200 Eoff 22 ID, Drain Current (A) 250 VDS=333V ID=497A TJ=125°C L=100µH 34 6 0 100 200 300 400 500 600 700 800 150 tf 40 td(on) 30 VDS=333V RG=0.5Ω TJ=125°C L=100µH 50 100 150 200 250 300 350 400 450 ID, Drain Current (A) www.microsemi.com Source to Drain Diode Forward Voltage 10000 1000 TJ=150°C 100 TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) 6–7 APTM50UM09FAG Rev 3 August, 2017 90 160 tr and tf (ns) td(on) and td(off) (ns) 110 APTM50UM09FAG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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