JANSR2N7389

JANS 2N7389 Radiation Hardened P-Channel MOSFET Qualified Levels: JANSR and JANSF Qualified per MIL-PRF-19500/630 DESCRIPTION Microsemi’s first generation Rad- Hard MOSFET’s are designed for Space and Military applications. The devices have been characterized for Total Dose (TID) and Single Event environments (SEE). These products may be used for satellite Power Supplies, Motor Controls and any miscellaneous power applications needed for Space. Microsemi’s Rad- hard MOSFET’s are qualified to MIL-PRF- 19500 slash sheet specifications. The 2N7389 is qualified to meet Slash Sheet /630 of MIL-PRF-19500. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N7389 number • • • Hermetically sealed package Internal metallurgical bonds RHA level JANS qualifications available per MIL-PRF-19500/630. (See part nomenclature for all available options.) TO-205AF (formerly TO-39) Package APPLICATIONS / BENEFITS • • • Leaded TO-205AF package Lightweight package Military and other high-reliability rad-hard applications Also available in: U-18 LCC Package (surface mount) JANS 2N7389U MAXIMUM RATINGS @ T C = +25 ºC unless otherwise stated Parameters / Test Conditions Operating & Storage Junction Temperature Range Thermal Resistance Junction-to-Case (see Figure 4) Total Power Dissipation @ T A = +25 °C @ T C = +25 °C Gate-Source Voltage, dc (2) (3) Drain Current, dc @ T C = +25 ºC (2) (3) Drain Current, dc @ T C = +100 ºC (4) Off-State Current (Peak Total Value) Source Current NOTES: (1) Symbol Value T J & T stg R ӨJC V GS I D1 I D2 I DM -55 to +150 5 0.8 25 ± 20 -6.5 -4.1 -26 IS -6.5 PT Unit o °C C/W W V A A A A 1. Derated linearly 0.2 W/ºC for T C > +25 ºC 2. The following formula derives the maximum theoretical I D limit. I D is limited by package and internal wires and may also be limited by pin diameter: 3. See Figure 3 for maximum drain current graphs 4. I DM = 4 X I D1 as calculated in note (2) MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0126, Rev. 2 (7/26/13) ©2013 Microsemi Corporation Page 1 of 8 JANS 2N7389 MECHANICAL and PACKAGING • • • • • CASE: Hermetically sealed, kovar base, nickel cap TERMINALS: Leads are gold plated and solder dipped over steel MARKING: Part number, date code, manufacturer’s ID WEIGHT: Approximately 1.064 grams See Package Dimensions on last page. PART NOMENCLATURE JANSR 2N7389 Reliability Level JANSR = 100K Rads (Si) JANSF = 300K Rads (Si) Symbol di/dt ID I DSS IF I GSS IS r DS(on) RG V (BR)DSS V DD V DG V DS V DS(on) V GS JEDEC type number SYMBOLS & DEFINITIONS Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. Drain Current, dc: The direct current into the drain terminal. Zero-Gate-Voltage Drain Current: The direct current into the gate terminal when the gate-source voltage is zero. Forward Current: The current flowing from the p-type region to the n-type region. Reverse-Gate Current, Drain Short-Circuited to Source: The direct current into the gate terminal with a forward gate source voltage applied (I GSSF ) or reverse gate source voltage applied (I GSSF ) and the drain terminal short-circuited to the source terminal. Source Current, dc: The direct current into the source terminal. Static Drain-Source On-State Resistance: The dc resistance between the drain and source terminals with a specified gate-source voltage applied to bias the device to the on state. Gate Drive Impedance or Gate Resistance. Drain-Source Breakdown Voltage: Gate short-circuited to the source terminal. Drain-Supply Voltage, dc: The dc supply voltage applied to a circuit connected to the drain terminal. Drain-Gate Voltage, dc: The dc voltage between the drain and gate terminals. Drain-Source Voltage, dc: The dc voltage between the drain terminal and the source terminal. Drain-Source On-State Voltage: The voltage between the drain and source terminals with a specified forward gatesource voltage supplied to bias the device to the on-state. Gate-Source Voltage, dc: The dc voltage between the gate terminal and the source terminal. T4-LDS-0126, Rev. 2 (7/26/13) ©2013 Microsemi Corporation Page 2 of 8 JANS 2N7389 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted Parameters / Test Conditions Symbol Min. V (BR)DSS -100 V GS(th)1 V GS(th)2 V GS(th)3 -2.0 -1.0 Max. Unit PRE-IRRADIATION CHARACTERISTICS Drain-Source Breakdown Voltage V GS = 0 V, I D = -1.0 mA Gate-Source Voltage (Threshold) V DS ≥ V GS , I D = -1 mA V DS ≥ V GS , I D = -1 mA, T J = +125°C V DS ≥ V GS , I D = -1 mA, T J = -55°C Gate Current V GS = ± 20 V, V DS = 0 V V GS = ± 20 V, V DS = 0 V, T J = +125°C V -4.0 V -5.0 I GSS1 I GSS2 ±100 ±200 nA I DSS1 -25 µA I DSS2 -0.25 mA r DS(on)1 0.30 Ω r DS(on)2 0.35 Ω r DS(on)3 0.54 Ω V SD -3.0 V Max. Unit Q g(on) 45 nC Gate to Source Charge V GS = -12 V, I D = -6.5 A, V DS = -50 V Q gs 10 nC Gate to Drain Charge V GS = -12 V, I D = -6.5 A, V DS = -50 V Q gd 25 nC Max. Unit t d(on) 30 ns tr 50 ns t d(off) 70 ns tf 70 ns t rr 250 ns Drain Current V GS = 0 V, V DS = -80 V Drain Current V GS = 0 V, V DS = -80 V, T J = +125 °C Static Drain-Source On-State Resistance V GS = -12 V, I D = -4.1 A pulsed Static Drain-Source On-State Resistance V GS = -12 V, I D = -6.5 A pulsed Static Drain-Source On-State Resistance T J = +125°C V GS = -12 V, I D = -4.1 A pulsed Diode Forward Voltage V GS = 0 V, I D = -6.5 A pulsed DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge V GS = -12 V, I D = -6.5 A, V DS = -50 V SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-on delay time I D = -6.5 A, V GS = -12 V, R G = 7.5 Ω, V DD = -50 V Rise time I D = -6.5 A, V GS = -12 V, R G = 7.5 Ω, V DD = -50 V Turn-off delay time I D = -6.5 A, V GS = -12 V, R G = 7.5 Ω, V DD = -50 V Fall time I D = -6.5 A, V GS = -12 V, R G = 7.5 Ω, V DD = -50 V Diode Reverse Recovery Time di/dt ≤ -100 A/µs, V DD ≤ -50 V, I F = -6.5 A T4-LDS-0126, Rev. 2 (7/26/13) ©2013 Microsemi Corporation Symbol Symbol Min. Min. Page 3 of 8 JANS 2N7389 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted (continued) POST-IRRADIATION (1) Parameters / Test Conditions Drain-Source Breakdown Voltage V GS = 0 V, I D = -1 mA Gate-Source Voltage (Threshold) V DS ≥ V GS , I D = -1.0 mA JANSR V DS ≥ V GS , I D = -1.0 mA JANSF Gate Current V GS = ±20 V, V DS = 0 V Drain Current V GS = 0 V, V DS = -80 V of V DS (pre-irradiated) Static Drain-Source On-State Voltage V GS = -12 V, I D = -4.1 pulsed Diode Forward Voltage V GS = 0 V, I D = -6.5 pulsed Symbol Min. V (BR)DSS -100 V GS(th)1 V GS(th)1 -2.0 -2.0 Max. Unit V -4.0 -5.0 V I GSS1 ±100 nA I DSS1 -25 µA r DS(on) 1.23 V V SD -3.0 V NOTE: 1. Post-irradiation electrical characteristics apply to devices subjected to steady state total dose irradiation testing in accordance with MIL-STD-750, method 1019. Separate samples are tested for V GS bias (12V), and V DS bias (80V) conditions. ID1 Drain-to-Source Current (A) SAFE OPERATING AREA V DS , Drain-to-Source Voltage (V) FIGURE 1 T4-LDS-0126, Rev. 2 (7/26/13) ©2013 Microsemi Corporation Page 4 of 8 JANS 2N7389 GRAPHS SEE (Single Event Effect) Typical Response: Heavy Ion testing of the 2N7389 device has been characterized at the Texas A&M cyclotron. The following SEE curve has been established using the elements, LET, range, and Total Energy conditions as shown: VDS, Drain Source Voltage, V FIGURE 2 V GS , Gate Source Voltage, V ID Drain Current (Amperes) It should be noted that total energy levels are considered to be a factor in SEE characterization. Comparisons to other datasets should not be based on LET alone. Please consult factory for more information. T C Case Temperature (°C) FIGURE 3 Maximum Drain Current vs Case Temperature T4-LDS-0126, Rev. 2 (7/26/13) ©2013 Microsemi Corporation Page 5 of 8 JANS 2N7389 Thermal impedance ZθJC GRAPHS (continued) t1, Rectangular Pulse Duration (sec) FIGURE 4 Thermal Impedance Curves T4-LDS-0126, Rev. 2 (7/26/13) ©2013 Microsemi Corporation Page 6 of 8 JANS 2N7389 PACKAGE DIMENSIONS Ltr Dimensions Inch Millimeters Min Max Min Max CD 0.315 0.355 8.00 8.51 CH 0.160 0.180 4.07 4.57 HD 0.340 0.370 8.64 9.40 h 0.009 0.041 0.23 1.04 Notes j 0.028 0.034 0.71 0.86 3 k 0.029 0.045 0.74 1.14 3, 4 LD 0.016 0.021 0.41 0.53 7, 8 LL 0.500 0.750 12.7 19.05 7, 8, 12 LC LU 0.200 TP 0.016 0.019 L1 - L2 0.250 P 0.100 Q - r α 5.08 TP 6 0.41 0.48 7, 8 0.050 - 1.27 7, 8 - 6.35 - 7, 8 0.050 - 1.27 5 0.25 45° TP 10 6 0.010 45° TP 2.54 NOTES: 1. 2. 3. 4. 5. 6. Dimensions are in inches. Millimeters are given for information only. Beyond r (radius) maximum, TL shall be held for a minimum length of 0.011 inch (0.28 mm). Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. Leads at gauge plane 0.054 +0.001 -0.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within 0.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. 12. Lead 1 = source, lead 2 = gate, lead 3 = drain. See schematic on next page T4-LDS-0126, Rev. 2 (7/26/13) ©2013 Microsemi Corporation Page 7 of 8 JANS 2N7389 SCHEMATIC T4-LDS-0126, Rev. 2 (7/26/13) ©2013 Microsemi Corporation Page 8 of 8