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JANTX1N6663

JANTX1N6663

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

    DO-35

  • 描述:

    DIODEGENPURP600V500MADO35

  • 数据手册
  • 价格&库存
JANTX1N6663 数据手册
1N6661US thru 1N6663US VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE These “standard recovery” rectifier diodes are military qualified to MIL-PRF-19500/587 and is ideal for high-reliability applications where a failure cannot be tolerated. They have a 500 mA rating with working peak reverse voltages from 225 to 600 volts and are hermetically sealed with void-less-glass construction using an internal “Category I” metallurgical bond. The axial-leaded package configurations are also available by deleting the “US” suffix (see separate data sheet for 1N6661 to 1N6663). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including Fast and Ultrafast device types in both through-hole and surface mount packages. Package “A” or D-5A IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES WWW . Microsemi .C OM DESCRIPTION APPLICATIONS / BENEFITS • • • • • • • • • Popular JEDEC registered 1N6661 thru 1N6663 series Voidless hermetically sealed glass package Triple-Layer Passivation Internal “Category I” Metallurgical bonds Working Peak Reverse Voltage 225 to 600 Volts. JAN, JANTX, and JANTXV available per MIL-PRF19500/587 • Axial-leaded equivalents also available without the “US” suffix (see 1N6661 thru 1N6663) • • • • MAXIMUM RATINGS MECHANICAL AND PACKAGING • Junction & Storage Temperature: -65 C to +175 C • Thermal Resistance: 35oC/W junction to end cap • Average Rectified Forward Current (IO): 0.5 Amps @ TEC = 110ºC and 0.150 Amps at TEC = 150ºC • Forward Surge Current: 5 Amps @ 8.3 ms half-sine • Solder Temperatures: 260ºC for 10 s (maximum) o Standard recovery 0.5 Amp rectifiers 225 to 600 V Military and other high-reliability applications General rectifier applications including bridges, halfbridges, catch diodes, etc. Forward surge current capability Extremely robust construction Low thermal resistance in small MELF package Inherently radiation hard as described in Microsemi MicroNote 050 • o • • • • • • CASE: Hermetically sealed void-less hard glass with Tungsten slugs TERMINATIONS: End caps are copper with Tin/Lead (Sn/Pb) finish MARKING: Body paint POLARITY: Cathode band TAPE & REEL option: Standard per EIA-481-B WEIGHT: 84 mg (approx) See package dimensions on last page ELECTRICAL CHARACTERISTICS TYPE 225 400 600 MINIMUM BREAKDOWN VOLTAGE VBR @ 100μA VOLTS 270 480 720 AVERAGE RECTIFIED CURRENT (NOTE 2) IO AMPS o o 25 C 150 C 0.5 0.5 0.5 0.15 0.15 0.15 MAXIMUM FORWARD VOLTAGE VF @ 0.4 A (PULSED) VOLTS 1.0 1.0 1.0 MAXIMUM REVERSE CURRENT IR @ VRWM μA o o 25 C 150 C 0.05 0.05 0.05 300 300 300 MAXIMUM SURGE CURRENT (NOTE 1) IFSM AMPS 5 5 5 NOTE 1: TA = 25oC, 10 surges of 8.3 ms @ 1 minute intervals NOTE 2: Linearly derate at 8.75 mA/ºC between TEC = 110ºC to 150ºC and 6.0 mA/ºC between TEC = 150ºC to 175ºC Copyright © 2008 1-03-2008 Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N6661US - 1N6663US 1N6661US 1N6662US 1N6663US WORKING PEAK REVERSE VOLTAGE VRWM VOLTS 1N6661US thru 1N6663US SCOTTSDALE DIVISION Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. GRAPHS WWW . Microsemi .C OM SYMBOLS & DEFINITIONS Definition Symbol VBR VRWM VF IR VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS PACKAGE DIMENSIONS INCHES MIN MAX INCHES mm A 0.246 6.25 MAX B 0.067 1.70 C 0.105 2.67 BD .097 .103 2.46 2.62 BL .185 .200 4.70 5.08 ECT .019 .028 0.48 0.71 S .003 --- 0.08 --- Copyright © 2008 1-03-2008 PAD LAYOUT mm MIN 1N6661US - 1N6663US NOTE: This Package Outline has also previously been identified as “D-5A” Note: If mounting requires adhesive separate from the solder, an additional 0.060 inch diameter contact may be placed in the center between the pads as an optional spot for cement. Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Microchip: JAN1N6661US JAN1N6662US JANTX1N6663US
JANTX1N6663 价格&库存

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