2N3700
Available on
commercial
versions
Low Power NPN Silicon Transistor
Qualified per MIL-PRF-19500/391
Qualified Levels:
JAN, JANTX,
JANTXV, and JANS
DESCRIPTION
This 2N3700 NPN transistor comes in a hermetically sealed metal TO-18 package and is
military qualified for high-reliability applications.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
•
JEDEC registered 2N3700 number.
•
•
JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/391.
Rad hard levels are also available per MIL-PRF-19500/391. (See RHA datasheet for
JANS_2N3700.)
RoHS compliant versions available (commercial grade only).
•
TO-18 (TO-206AA)
Package
Also available in:
UB package
(surface mount)
2N3700UB
APPLICATIONS / BENEFITS
•
•
•
•
Leaded, hermetically sealed TO-18 package.
Lightweight.
Low power.
Military and other high-reliability applications.
TO-39 (TO-205AD)
(leaded)
2N3019
TO-5 package
(leaded)
2N3019S
TO-46 (TO-206AB)
(leaded)
2N3057A
o
MAXIMUM RATINGS @ T A = +25 C unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Impedance Junction-to-Ambient
Thermal Impedance Junction-to-Case
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation:
Notes:
o
(1)
@ T A = +25 C
o
(2)
@ T C = +25 C
Symbol
T J and T STG
R ӨJA
R ӨJC
V CEO
V CBO
V EBO
IC
Value
-65 to +200
325
150
80
140
7.0
1.0
Unit
o
C
o
C/W
o
C/W
V
V
V
A
PD
0.5
1.0
W
1. Derate linearly 2.85 mW/°C for T A ≥ +25 °C.
2. Derate linearly 10.3 mW/°C for T C ≥ +25 °C.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0185-2, Rev. 1 (4/24/13)
©2013 Microsemi Corporation
Page 1 of 6
2N3700
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: Hermetically sealed, nickel plated kovar base, nickel cap.
TERMINALS: Gold plate over nickel, kovar for JANS. Gold plate over nickel, kovar, solder dipped for JAN, JANTX, and JANTXV.
MARKING: Part number, date code, manufacturer’s ID.
WEIGHT: Approximately 0.3 grams.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN
2N3700
(e4)
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
JANS = JANS level
Blank = Commercial
RoHS Compliance
e4 = RoHS compliant (without
solder dip)
Blank = non-RoHS compliant
JEDEC type number
(see Electrical Characteristics
table)
Symbol
f
IB
IE
TA
TC
V CB
V CE
V EB
SYMBOLS & DEFINITIONS
Definition
Frequency
Base current (dc)
Emitter current (dc)
Ambient temperature
Case temperature
Collector to base voltage (dc)
Collector to emitter voltage (dc)
Emitter to base voltage (dc)
T4-LDS-0185-2, Rev. 1 (4/24/13)
©2013 Microsemi Corporation
Page 2 of 6
2N3700
ELECTRICAL CHARACTERISTICS @ T A = +25 °C unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I C = 30 mA
Collector-Base Cutoff Current
V CB = 140 V
Emitter-Base Cutoff Current
V EB = 7 V
Collector-Emitter Cutoff Current
V CE = 90 V
Emitter-Base Cutoff Current
V EB = 5.0 V
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I C = 150 mA, V CE = 10 V
I C = 0.1 mA, V CE = 10 V
I C = 10 mA, V CE = 10 V
I C = 500 mA, V CE = 10 V
I C = 1.0 A, V CE = 10 V
Collector-Emitter Saturation Voltage
I C = 150 mA, I B = 15 mA
I C = 500 mA, I B = 50 mA
Base-Emitter Saturation Voltage
I C = 150 mA, I B = 15 mA
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
V (BR)CEO
80
Max.
Unit
V
I CBO
10
µA
I EBO1
10
µA
I CES
10
nA
I EBO2
10
nA
h FE
100
50
90
50
15
300
300
300
V CE(sat)
0.2
0.5
V
V BE(sat)
1.1
V
Unit
Symbol
Min.
Max.
Small-Signal Short-Circuit Forward Current Transfer Ratio
I C = 1.0 mA, V CE = 5.0 V, f = 1.0 kHz
h fe
80
400
Magnitude of Small-Signal Short-Circuit Forward Current
Transfer Ratio
I C = 50 mA, V CE = 10 V, f = 20 MHz
|h fe |
5.0
20
Output Capacitance
V CB = 10 V, I E = 0, 100 kHz ≤ f ≤ 1.0 MHz
C obo
12
pF
Input Capacitance
V EB = 0.5 V, I C = 0, 100 kHz ≤ f ≤ 1.0 MHz
C ibo
60
pF
T4-LDS-0185-2, Rev. 1 (4/24/13)
©2013 Microsemi Corporation
Page 3 of 6
2N3700
ELECTRICAL CHARACTERISTICS @ T A = +25 °C unless otherwise noted (continued)
SAFE OPERATION AREA (See SOA graph below and MIL-STD-750, method 3053)
DC Tests
T C = 25 °C, 1 cycle, t = 10 ms
Test 1
2N3700
V CE = 10 V
I C = 180 mA
Test 2
2N3700
V CE = 40 V
I C = 45 mA
Test 3
2N3700
V CE = 80 V
I C = 22.5 mA
IC – COLLECTOR CURRENT - A
(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
V CE – COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area @ T A = 25 ºC
T4-LDS-0185-2, Rev. 1 (4/24/13)
©2013 Microsemi Corporation
Page 4 of 6
2N3700
Maximum DC Operation Rating (W)
GRAPHS
o
T A ( C) Ambient
Maximum DC Operation Rating (W)
FIGURE 1
Temperature-Power Derating (R ӨJA )
Leads = 0.125 inch (3.175mm)
o
T C ( C) Case at base
FIGURE 2
Temperature-Power Derating (R ӨJC )
T4-LDS-0185-2, Rev. 1 (4/24/13)
©2013 Microsemi Corporation
Page 5 of 6
2N3700
PACKAGE DIMENSIONS
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
r
α
Dimensions
Inch
Millimeters
Min
Max
Min
Max
0.178 0.195
4.52
4.95
0.170 0.210
4.32
5.33
0.209 0.230
5.31
5.84
0.100 TP
2.54 TP
0.016 0.021
0.41
0.53
0.500 0.750 12.70 19.05
0.016 0.019
0.41
0.48
0.050
1.27
0.250
6.35
0.100
2.54
0.030
0.76
0.028 0.048
0.71
1.22
0.036 0.046
0.91
1.17
0.010
0.25
45° TP
45° TP
1, 2, 9, 11, 12
Note
6
7,8
7,8
7,8
7,8
7,8
5
3,4
3
10
6
NOTES:
1.
2.
3.
4.
5.
6.
Dimensions are in inches.
Millimeters are given for general information only.
Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm).
Dimension TL measured from maximum HD.
Body contour optional within zone defined by HD, CD, and Q.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. This device may be measured by
direct methods.
7. Dimension LU applies between L 1 and L 2 . Dimension LD applies between L 2 and LL minimum. Diameter is uncontrolled in L 1
and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
T4-LDS-0185-2, Rev. 1 (4/24/13)
©2013 Microsemi Corporation
Page 6 of 6