JANTX2N4957UB

2N4957UB Compliant Qualified Levels: JAN, JANTX, and JANTXV Surface Mount PNP Silicon VHF-UHF Amplifier Transistors Qualified per MIL-PRF-19500/426 DESCRIPTION The 2N4957UB is a military qualified silicon PNP amplifier transistor designed for VHF-UHF equipment and other high-reliability applications. Common applications include high gain low noise amplifier; oscillator, and mixer applications. It is also available in a low-profile TO-72 leaded package. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • JEDEC registered 2N4957 JAN, JANTX, and JANTXV military qualified versions are available per MIL-PRF-19500/426 (See part nomenclature for all available options) • RoHS compliant UB Package Also available in: APPLICATIONS / BENEFITS • • TO-72 Package Low-power, ultra-high frequency transistor Leaded metal TO-72 package (leaded top hat) 2N4957 MAXIMUM RATINGS @ TA = +25 oC Parameters/Test Conditions Junction and Storage Temperature Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (1) Total Power Dissipation Collector Current Symbol Value TJ and TSTG V CEO V CBO V EBO PT IC -65 to +200 -30 -30 -3 200 -30 Unit o C V V V mW mA MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 Notes: 1. Derate linearly 1.14 mW/°C for T A > +25 °C MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0313-1, Rev. 1 (10/8/13) ©2013 Microsemi Corporation Page 1 of 4 2N4957UB MECHANICAL and PACKAGING • • • • • • • CASE: Ceramic TERMINALS: Gold plating over nickel underplate MARKING: Part number, date code, manufacturer’s ID POLARITY: PNP, see case outline on last page TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities WEIGHT: < 0.04 grams See Package Dimensions on last page. PART NOMENCLATURE JAN 2N4957 UB Reliability Level JAN=JAN level JANTX=JAN level JANTXV=JANTXV level Blank = Commercial Surface Mount package JEDEC type number (See Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol IB IC IE TA TC V CB V CBO V CEO V EB V EBO Base current: The value of the dc current into the base terminal. Collector current: The value of the dc current into the collector terminal. Emitter current: The value of the dc current into the emitter terminal. Ambient temperature: The air temperature measured below a device, in an environment of substantially uniform temperature, cooled only by natural air convection and not materially affected by reflective and radiant surfaces. Case temperature: The temperature measured at a specified location on the case of a device. Collector-base voltage: The dc voltage between the collector and the base. Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is open-circuited. Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base terminal is open-circuited. Emitter-base voltage: The dc voltage between the emitter and the base. Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal open-circuited. T4-LDS-0313-1, Rev. 1 (10/8/13) ©2013 Microsemi Corporation Page 2 of 4 2N4957UB ELECTRICAL CHARACTERISTICS @ TC = +25oC OFF CHARACTERISTICS Test Conditions Symbol Collector-Emitter Breakdown Voltage I C = -1.0 mA, I B = 0, Bias condition D Collector to Base Cutoff Current V CB = -20 V, I E = 0, Bias condition D V CB = -30 V, Bias condition D Emitter to Base Cutoff Current V EB = -3 V, Bias condition D Value Min. Max. Unit V (BR)CEO -30 - V I CBO - -100 -100 nA µA I EBO - -100 µA Min. Max. Unit 15 20 30 10 165 ON CHARACTERISTICS Test Conditions Symbol Forward Current transfer ratio I C = -0.5 mA, V CE = -10 V I C = -2.0 mA, V CE = -10 V I C = -5.0 mA, V CE = -10 V I C = -5.0 mA, V CE = -10 V, TA = -55 ºC h FE Value DYNAMIC CHARACTERISTICS Test Conditions Symbol Magnitude of common emitter small signal short circuit forward current transfer ratio V CE = -10 V, I E = -2.0 mA, f = 100 MHz Value Unit Min. Max. |h fe | 12 36 Collector-base time constant I E = -2.0 mA, V CB = -10.0 V, f = 63.6 MHz r b ’C c 1.0 8.0 ps Collector to Base – feedback capacitance I E = 0 mA, V CB = -10 V, 100 kHz < f < 1 MHz C cb 0.8 pF Noise Figure (50 Ohms) I C = -2.0 mA, V CE = -10 V, f = 450 MHz, R L = 50 Ω NF 3.5 dB Small Signal Power Gain (common emitter) I C = -2.0 mA, V CE = -10 V, f = 450 MHz G pe 25 dB T4-LDS-0313-1, Rev. 1 (10/8/13) ©2013 Microsemi Corporation 17 Page 3 of 4 2N4957UB PACKAGE DIMENSIONS Symbol BH BL BW CL CW LL1 LL2 Dimensions millimeters Max Min Max 0.056 1.17 1.42 0.128 2.92 3.25 0.108 2.16 2.74 0.128 3.25 0.108 2.74 0.038 0.56 0.97 0.035 0.43 0.89 inch Min 0.046 0.115 0.085 0.022 0.017 Note Symbol LS1 LS2 LW r r1 r2 Dimensions millimeters Max Min Max 0.040 0.91 1.02 0.079 1.80 2.01 0.24 0.41 0.61 0.008 0.20 0.012 0.31 0.022 0.056 inch Min 0.036 0.071 0.16 - Note NOTES: 1. Dimensions are in inches. 2. Millimeters are given for information only. 3. Hatched areas on package denote metallized areas. 4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0313-1, Rev. 1 (10/8/13) ©2013 Microsemi Corporation Page 4 of 4