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LX9610ILQ

LX9610ILQ

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

    QFN

  • 描述:

    IC REG BUCK ADJUSTABLE 12A 15QFN

  • 数据手册
  • 价格&库存
LX9610ILQ 数据手册
LX9610 12A, 22V, Step Down Power Module Description Features The LX9610 is a 22V, 12A Power Module designed for step down point of load applications. This device includes a synchronous controller with compensation built-in, internal power MOSFETs, and the output inductor all in a 15mm x 15mm QFN package. It will operate with an input voltage from 8V to 22V, while the output voltage is adjustable from 0.8V to 5V, using a single external resistor. Included is an internal 5V regulator, and the only other components needed to make a complete 12A DC to DC converter are a 4.7µF decoupling capacitor for the 5V regulator, and the bulk input and output capacitors. Other features of this device are internal digital soft start, thermal shutdown and hiccup mode current limit. The device can be enabled or shut down through the COMP/EN pin. Over current sensing is accomplished by measuring the voltage across the Rds-on of the low-side MOSFET. Current of the OCP pin of the IC multiplied by resistance of the OCP resistor (residing on the PCB inside the module) sets the OCP threshold. An external resistor can be used to reduce the OCP threshold. The LX9610 is package in a thermal enhanced, compact overmolded module with a length, width and height of the power module are 15mm, 15mm and 4mm, respectively. This package is suitable for assembly by standard automated surface mount equipment.  Fully integrated 12A Power Module Requiring Only Input/output Caps and Few External Components  Operational Input Supply Voltage Range: 8V to 22V  Adjustable Output from 0.8V to 5V Using One External Resistor  Integrated Upper and Lower N-Channel MOSFET’s  Maximum 1MHz Switching Frequency (Preset frequency is 600kHz)  Can be Enabled or Shut Down Through the COMP/EN pin  Internal Digital Soft Start  Cycle-by-cycle Over Current Monitoring with Hiccup mode protection  Available in QFN 15mm x 15mm x 4mm  RoHS Compliant & Halogen Free Applications       Set-top Box Servers Industrial Equipments Telecom and Datacom Applications Point of Load Regulator Applications Gaming Product Highlight VIN = 12V 2 X 10µF CERAMIC 25V VIN LX9610 3 X 22µF CERAMIC 16V SW PGND 5VREG 4.7µF Ceramic X5R VOUT = 0.8V to 5V (12A) VOUT VO_SNS 220µF 16V COMP/EN FB FREQ-ADJ OCP_ADJ 330µF ESR 10mΩ POSCAP Optional OCP adj resistor GND Figure 1 · Product Highlight December 2013 Rev. 1.0 www.microsemi.com © 2013 Microsemi Corporation- Analog Mixed Signal Group 1 12A, 22V, Step Down Power Module Pin Configuration Figure 2 · Pinout (Top View) Top mark  MSC  LX9610 YYWWA = Year/Week/Lot Identifier Ordering Information Ambient Temperature Type Package RoHS2 compliant, -40°C to 85°C Pb-free QFN 15 x 15 x 3.75 Matte Sn lead finish 15L Part Number Packaging Type LX9610ILQ Tube LX9610ILQ -TR Tape and Reel MSL 3 Pin Description Pin Number 2 Pin Designator Description These pins are connected to the GND pin of the controller IC. Connect the external controller components to these pins for ground connection. 1, 2, 3, 4 GND 5 5VREG The output of the internal 5V regulator. A 4.7µF ceramic cap must be connected from this pin to GND. 6 VO_SNS This pin is connected to the VOUT at the regulation point of the load. 7 Unused 8 OCP_ADJ 9 VIN NC, this pin is not used. A resistor between this pin and SW pin adjusts the OCP threshold down. Power input pin of the module. Connect a low ESR bulk capacitor from this pin to GND to have low ripple voltage at this pin. Absolute Maximum Ratings Pin Number Pin Designator Description Switch node pin. The high-side and low-side MOSFET’s and the inductor are connected to this pin. If needed, connect an R-C snubber network from this pin to GND to limit the voltage spike at this to 30V (max). 10 SW 11 PGND Power ground pin. Connect the input and output bulk caps to this pin for ground connection. This pin needs to be connected to GND pins on the application PCB. 12 VOUT Output terminal of the power module. Connect a 330µF POSCAP in parallel with three 22µF ceramic caps from this pin to PGND pin. 13 COMP/EN This is the output of the transconductance error amplifier. Pulling this pin to ground shuts down the power module. Floating this pin enables the power module. 14 FB 15 FREQ-ADJ Feedback pin. A resistor connected from this pin to GND sets the output voltage. Use the formula: VOUT = VFB * (1 + 49.9k / RFB) Switching frequency adjustment pin. With this pin floating, the module will have a switching frequency of 600kHz. By connecting an external resistor from this pin to GND, the switching frequency can be increased. Maximum frequency allowed is 1MHz. Absolute Maximum Ratings Value Units Supply Input Voltage (VIN) -0.3 to 25 V Switch Node Voltage (SW) -0.3 to 30 V Parameter All Other Pins -0.3 to 6.5 V Operational Ambient Temperature -55 to +125 °C Storage Temperature Range -65 to +150 °C 245 °C Peak Package Solder Reflow Temperature (40 seconds maximum exposure) Exceeding these ratings could cause damage to the device. All voltages are with respect to GND. Currents are positive into, negative out of specified terminal. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” are not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Thermal Properties Thermal Resistance Typ θJP Junction to Pads 1.5 θJA Junction to Ambient 8 Units °C/W Note: Note: The Jx numbers assume no forced airflow. Junction Temperature is calculated using TJ = TA + (PD x JA). In particular, θJA is a function of the PCB construction. The stated number above is for a four-layer board in accordance with JESD-51 (JEDEC) with thermal vias on VIN, SW, VOUT, and PGND pins. See PCB layout Guidelines, figure 21. 3 12A, 22V, Step Down Power Module Electrical Characteristics Symbol Parameter Test Condition Min Typ Max Units Unless otherwise specified, the following specifications apply over the operating ambient temperature of -40C ≤ TA ≤ 85C except where otherwise noted with the following test conditions: VIN = 12V, VOUT = 1.2V, CIN = 220µF + 2x10µF(ceramic), COUT=330 µF, ESR =10miliohm + 3 x 22µF ceramic capacitors. Typical parameter refers to TJ = 25°C Operating Current IQ Quiescent Current ISHDN Shutdown Supply Current VIN UVLO IVOUT = 0A, VOUT = 5V, VIN = 12V VUVLO Under Voltage Lockout VIN Rising VHYS FD UVLO Hysteresis VFB Feedback Voltage VCOMP/EN = 0V 3.7 75 4.8 11 mA mA 6 6.5 7.5 V 0.6 0.784 0.8 V 0.816 V Oscillator FOSC Internal Oscillator Frequency DMAX Maximum Duty Cycle TONMIN Minimum On Time COMP/EN GEA FREQ-ADJ pin = floating, open FREQ-ADJ pin = 20kΩ to GND VFB = 0.7V, FREQ-ADJ pin = floating, open VFB = 1V 600 930 80 86 % 150 ns Error Amplifier Transconductance 1V ≤VCOMP/EN ≤ 4V; GBD 1.35 1.85 2.35 mA/V COMP/EN Shut Down Threshold GBD 0.14 0.2 0.26 V Output ΔVOUTLINE Line Regulation IVOUT = 0.5A, 8V < VIN < 22V ΔVOUTLOAD Load Regulation VIN = 12V, 0A < IVOUT < 12A, GBD Low-side Switch On ISW = 1A (current coming out of RDSONL Resistance SW) ILEAK-SW SW Pin Leakage Current VO_SNS Open Soft Start TSS Soft Start Time THICCUP Hiccup Time VIN=12V, GBD Protection Output Under Voltage VFBUV OCP_ADJ pin floating 0.54 Protection Threshold OCP Threshold for Output 13.6 Current TOTSD Thermal Shutdown Threshold GBD Thermal Shutdown THYS Hysteresis 5VREG 5VREG Voltage Range I5VREG = 5mA 4.875 5VREG UVLO 5VREG voltage rising, GBD 5VREG UVLO Hysteresis GDB 5VREG Max Current 8V ≤ VIN ≤ 22V 20 GBD = Guaranteed by design, characterization, not production tested. 4 83 kHz 0.1 0.013 7 % %/A 9 mΩ 1.14 mA 1.7 7.3 ms ms 0.6 0.66 V 23.6 28.5 A 155 °C 21 5.125 4.04 0.28 50 5.325 V V V mA Simplified Schematic Simplified Schematic 5VREG (5) VIN (9) BOOST FREQ-ADJ (15) HIGH SIDE DRIVE SW (10) 18.7k CONTROLLER 1 µH COMP/EN (13) VOUT (12) 3.24k LOW SIDE DRIVE PGND (11) FB (14) OCP_ADJ (8) 49.9k GND (1,2,3,4) VO_SNS (6) 1k INTERNAL PCB LX9610 Figure 3 · LX9610 Simplified Schematic 5 12A, 22V, Step Down Power Module Characteristic Curves – VIN = 12V, VOUT = 1.2V Figure 4 · Startup No Load CH1 VIN, CH3 VOUT, RFB = 100kΩ, CH4 Load Current Figure 5 · Startup 12A (Constant Current) CH1 VIN, CH3 VOUT, RFB = 100kΩ CH4 Load Current Figure 6 · Output Ripple , No Load CH1 Switch Node Voltage, CH3 VOUT (AC coupled across Ceramic Output Capacitors) Figure 7 · Output Ripple, 12A Load CH1 Switch Node Voltage, CH3 VOUT (AC coupled across Ceramic Output Capacitors) Figure 9 · Transient Response 6A to 12A (5A/µs) Figure 8 · Transient Response 0A to 5A (5A/µs) CH2 Switch Node Voltage, CH3 VOUT (AC CH1 VIN, CH2 Switch Node Voltage, CH3 VOUT (AC coupled across Ceramic Output Capacitors), coupled across Ceramic Output Capacitors), CH4 Load Current CH4 Load Current 6 Characteristic Curves – VIN = 12V, VOUT = 5V Characteristic Curves – VIN = 12V, VOUT = 5V Figure 10 · Startup No Load CH1 VIN, CH3 VOUT, RFB = 9.53kΩ, CH4 Load Current Figure 12 · Output Ripple , No Load CH1 Switch Node Voltage, CH2 VOUT (AC coupled across ceramic output capacitors) Figure 11 · Startup 12A (Constant Current) CH1 VIN, CH3 VOUT, RFB = 9.53kΩ, CH4 Load Current Figure 13 · Output Ripple, 12A Load CH1 Switch Node Voltage, CH2 VOUT (AC coupled across ceramic output capacitors) Figure 15 · Transient Response 6A to 12A (5A/µs) Figure 14 · Transient Response 0A to 5A (5A/µs) CH2 Switch Node Voltage, CH3 VOUT (AC CH1 VIN, CH2 Switch Node Voltage, CH3 VOUT coupled across ceramic output capacitors), (AC coupled across ceramic output capacitors), CH4 Load Current CH4 Load Current 7 12A, 22V, Step Down Power Module Characteristic Curves Figure 17 · Load Regulation VOUT = 12V, VIN = 8V, 12V, 22V Figure 16 · Line Regulation VOUT = 1.2V, IOUT = 5A 100.00% 90.00% 80.00% 70.00% 12Vin, 1.2Vout Efficiency (%) 60.00% 12Vin, 5Vout 50.00% 40.00% 30.00% 20.00% 10.00% 0.00% 0 1 2 3 4 5 6 7 Load current (A) Figure 18 · Efficiency Measurements VIN = 12V, VOUT = 1.2V and 5V 8 8 9 10 11 12 13 Characteristic Curves Characteristic Curves 4.5 4 3.5 Power Dissipation (W) 12Vin, 1.2Vout 3 12Vin, 5Vout 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 Load current (A) Figure 19 · Power Dissipation Measurements VIN = 12V, VOUT = 1.2V and 5V Thermal Derating Curve (VIN=12V) 14 Load Current (A) 1.2Vout 12 2.5Vout 10 3.3Vout 5Vout 8 6 4 2 0 70 80 90 100 110 120 130 Ambient Temperature (°C) Figure 20 · Thermal Derating Curve (VIN = 12V) Thermal performance shown requires use of thermal vias on all power components and large copper planes. 9 12A, 22V, Step Down Power Module PCB Layout Guidelines VIN copper plane (top, bottom, and inner layers as possible GND copper plane (top, bottom, and inner layers as possible 1.27 Thermal Vias Ø0.762 Ø0.381 Switch Node copper plane (top, bottom, and inner layers as possible VOUT copper plane (top, bottom, and inner layers as possible PGND copper plane (top, bottom, and inner layers as possible Figure 21 · PCB Footprint with Thermal Vias Notes: 1.Thermal vias diameter 0.762 mm, hole diameter 0.381, spacing is 1.27mm 2. Recommended tented thermal vias as shown with vias filled with solder. 3. Aperture design for thermal pads using multiple openings with 60 to 80% solder paste coverage. 4. For best thermal performance maximize plane size and include copper planes on inner layers. 5. For additional layout details see the LX9610 Evaluation Board User Guide. 10 Package Outline Dimensions Package Outline Dimensions The package is halogen free and meets RoHS2 and REACH standards. D 1.30 x 23 e 5.90 3.80 L 2.00 7.70 2.10 b 13.80 3.10 7.70 9.00 E b1 5.80 4.80 4.60 2.90 5.00 6.00 3.00 2.20 1.125 x 2 A A3 A1 Dim A A1 A3 b D E b1 e L MILLIMETERS MIN MAX 3.85 4.00 0 0.05 0.203 REF 0.75 0.85 15.00 BSC 15.00 BSC 0.45 0.55 1.30 BSC 1.15 1.25 INCHES MIN MAX 0.151 0.158 0 0.002 0.008 REF 0.030 0.033 0.591 BSC 0.591 BSC 0.018 0.022 0.051 BSC 0.045 0.049 Note: Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm (.006”) on any side. Lead dimension shall not include solder coverage. All dimensions are ± 0.50mm unless otherwise noted. Figure 22 · Package Dimensions 11 Microsemi Corporation (NASDAQ: MSCC) offers a comprehensive portfolio of semiconductor solutions for: aerospace, defense and security; enterprise and communications; and industrial and alternative energy markets. Products include high-performance, high-reliability analog and RF devices, mixed signal and RF integrated circuits, customizable SoCs, FPGAs, and complete subsystems. Microsemi is headquartered in Aliso Viejo, Calif. Learn more at www.microsemi.com. Microsemi Corporate Headquarters One Enterprise, Aliso Viejo CA 92656 USA Within the USA: +1(949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 © 2013 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. LX9610.0/1.0
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