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MP61003

MP61003

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    MP61003 - GaAs PIN DIODES - Microsemi Corporation

  • 数据手册
  • 价格&库存
MP61003 数据手册
GaAs PIN DIODES TM ® MP61001 – MP61012 Packaged and Bondable Chips Features ● ● ● ● ● ● Low Series Resistance Fast Switching Speed Low Capacitance No Reverse Bias Required Available in Packages and Bondable Chips Available as Chip-on-Board Components Applications ● ● ● Switches Attenuators Phase Shifters Description Microsemi’s GaAs PIN diodes are fabricated utilizing a gold contact mesa and protected with silicon nitride. The diodes have short carrier lifetime for fast switching speed and low series resistance. GaAs P00 diodes are available as bondable chips, chip-on-board components and in a variety of packages. GaAs PIN diodes, in comparison to Si PIN diodes, reach its high impedance state at zero bias and do not require reverse bias for low loss. Nanosecond switching speed is achieved with GaAs PIN diodes, using low-cost TTL drivers. Maximum Ratings Reverse Voltage Forward Current Incident Power Operating Temperature Storage Temperature Breakdown Voltage 50 mA @ 25°C +20 dBm @ 25°C -55°C to +175°C -55°C to +200°C Copyright  2008 Rev: 2009-05-11 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 GaAs PIN DIODES TM ® MP61001 – MP61012 GaAs PIN Diodes (Packaged and Bondable Chips) Gallium Arsenide PIN Diodes (Specifications @ 25°C) Part Number MP61001 MP61002 MP61003 MP61004 MP61005 MP61006 MP61007 MP61008 MP61009 MP61010 MP61011 MP61012 1 2 Max. CJ @ -10 V1 (pf) 0.03 0.04 0.05 0.06 0.07 0.08 0.10 0.12 0.15 0.18 0.23 0.35 Min. Breakdown Voltage (V) 200 200 200 100 100 100 75 75 50 50 50 50 Max. Resistance @ 20 mA2 () 3.0 3.0 3.0 2.0 2.0 2.0 2.0 2.0 1.0 1.0 0.8 0.8 Nominal Switching Speed (ns) 20.0 20.0 20.0 9.0 9.0 9.0 6.0 6.0 3.5 3.5 3.5 3.5 Nominal Carrier Lifetime3 (ns) 50 50 50 15 15 15 10 10 5 5 5 5 Capacitance is specified at 1 MHz. Resistance is specified at 1 GHz. 3 Carrier lifetime is inferred from stored charge measurement at 10 mA. Note: GaAs PIN diode chips have a minimum bonding area diameter of 50 microns. Typical Characteristics Copyright  2008 Rev: 2009-05-11 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2
MP61003 价格&库存

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