MRF553

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB Efficiency 60% (Typ) Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability Power Macro DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 16 36 4.0 500 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 75ºC Derate above 75ºC 3.0 40 Watts mW/ ºC MSC1316.PDF 10-25-99 MRF553 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCES BVCBO BVEBO ICES Test Conditions Min. Collector-Emitter Breakdown Voltage (IC=10 mAdc, IB=0) Collector-Emitter Sustaining Voltage (IC = 5.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IE = 0, IC = 5 mAdc) Emitter-Base Breakdown Voltage (IE = 1 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) 16 36 36 4.0 Value Typ. Max. 5 Unit Vdc Vdc Vdc Vdc mA (on) HFE DC Current Gain (IC = 250 mAdc, VCE = 5.0 Vdc) Both 30 200 - DYNAMIC Symbol COB Test Conditions Min. Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Value Typ. 12 Max. 20 Unit pF MSC1316.PDF 10-25-99 MRF553 FUNCTIONAL Symbol Power Gain GPE Collector Efficiency η Test Conditions Min. Test Circuit-Figure 1 Pout = 1.5 W, VCE =12.5Vdc f = 175 MHz Test Circuit-Figure 1 Pout = 1.5 W, VCE =12.5Vdc f = 175 MHz Test Circuit-Figure 1 Pout = 1.5 W, VCE =12.5Vdc f = 175 MHz 11.5 Value Typ. 13 Max. Unit dB 50 60 - % ψ Load Mismatch VSWR ≥ 10:1 All Phase Angles No Degradation in Output Power - Figure 1. 140–175 MHz Broadband Circuit Schematic, Stub tuning implemented on the input to improve match. Microsemi fixture schematic with input match optimization will be available in the final version of the data sheet. C1 — 36 pF Mini Underwood C2 — 47 pF Mini Underwood C3 — 91 pF Mini Underwood C4 — 68 pF Mini Underwood C5, C9 — 1.0 µ F Erie Red Cap Capacitor C6, C10 — 0.1 µ F, 35 V Tantulum C7 — 470 pF Chip Capacitor C8 — 2200 pF Chip Capacitor R1 — 4.7 kΩ, 1/4 W R2 — 100 Ω, 1/4 W D1 — 1N4148 Diode L1 — 3 Turns, #18 AWG, 0.210, ID, 3/16, Length L2, L4, L7 — 0.62,, #18 AWG Wire Bent into “V” L3, L6 — 60 x 125 x 250 Mils Copper Pad on 27Mils L5 — 12 µ H Molded Choke L8 — 7 Turns, #18 AWG, 0.170, ID, 7/16, Length L9 — 1.0,, #18 AWG Wire with 5 Ferrite Beads B — Ferrite Bead Thick Alumina Substrate Board Material — Glass Teflon, ε r = 2.56, t = 0.0625, MSC1316.PDF 10-25-99 MRF553 RF Low Power PA, LNA, and General Purpose Discrete Selector Guide GPE Freq (MHz) Efficiency (%) IC max (mA) Gu Max (dB) Ccb(pF) BVCEO IC max (mA) 3.5 20 30 30 1 1 3 1 1 1 2.6 12 15 25 15 15 12 15 15 15 1 15 15 12 16 2.2 0.45 1 1 1 17 10 10 12 15 400 400 400 50 40 150 30 50 35 100 200 200 30 50 40 200 200 100 70 35 30 Pout (watts) Freq (MHz) NF (dB) NF IC (mA) NF VCE Package Device SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 MA C R O X MA C R O X TO-39 SO-8 P O W ER MA C R O P O W ER MA C R O MA C R O X MA C R O X SO-8 P O W ER MA C R O P O W ER MA C R O MRF4427, R2 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 MRF559 MRF559 2N3866A MRF555 MRF555T MRF559 MRF559 MRF8372,R1,R2 MRF557 MRF557T NPN 175 NPN 175 NPN 175 NPN 175 NPN 175 NPN 175 NPN 200 NPN 5 1 2 NPN 5 1 2 NPN 4 0 0 NPN 4 7 0 NPN 4 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 0.15 1 1.5 1.5 1.75 3 18 10 11.5 11.5 11.5 7.8 20 60 50 60 50 50 50 12 12 12.5 12.5 12.5 12.5 6 20 20 16 16 16 18 12 16 16 30 30 16 16 16 16 16 16 16 400 400 500 500 330 1000 50 150 150 400 400 400 400 150 150 200 400 400 TO-39 TO-39 SO-8 TO-72 TO-72 TO-39 TO-72 TO-72 MACRO T 2N5109 MRF5943C MRF5943, R1, R2 2N5179 2N2857 MRF517 MRF904 2N6304 BFR91 BFR96 MRF5812, R1, R2 MRF581A BFR90 BFY90 MRF914 MRF581 MRF586 MRF951 MRF571 BFR91 BFR90 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 200 200 200 200 300 300 450 450 500 500 500 500 500 500 500 500 500 1000 1000 1000 1000 3 3.4 3.4 4.5 5.5 7.5 1.5 5 1.9 2 2 2 2.4 2.5 2.5 2.5 3 1.3 1.5 2.5 3 10 30 30 1.5 50 50 5 2 2 10 50 50 2 2 5 50 90 5 10 2 2 15 15 15 6 6 15 6 5 5 10 10 10 10 5 10 10 15 6 6 5 10 15 11 14 10 8 10 15.5 14 15 11 GN (dB) 12 11.4 15 17 13 5.5 11 14 16.5 14.5 17.8 15 18 20 15 17.8 14.5 17 1200 1000 1300 900 1600 4600 4000 1400 5000 500 5000 5000 5000 1300 4500 5000 4500 8000 8000 0.5 0.5 1 1 1.5 1.5 0.5 0.5 0.75 1.5 1.5 10 13 10 10 11 11 6.5 9.5 8 8 8 65 60 45 45 50 50 70 65 55 55 55 7.5 12.5 28 28 12.5 12.5 7.5 12.5 12.5 12.5 12.5 MACRO T SO-8 MACRO X Macro TO-72 TO-72 MACRO X TO-39 MACRO X MACRO X MACRO T MACRO T M R F 3 8 6 6 , R 1 , R 2 NPN 4 0 0 11 12.5 5000 5000 TO-39 TO-39 MRF545 MRF544 PNP NPN 14 13.5 1400 1500 Ftau (MHz) GPE (dB) GPE VCC Package Device BVCEO Type Type 2 70 70 400 400 RF (Low Power PA / General Purpose) Selection Guide RF (LNA / General Purpose) Selection Guide Low Cost RF Plastic Package Options 1 8 2 4 3 3 2 4 1 4 Macro T Macro X Power Macro SO-8 MSC1316.PDF 10-25-99 MRF553 PIN 1. COLLECTOR 2. EMITTER 3. BASE 4. EMITTER 1. 4. 2. 3. MSC1316.PDF 10-25-99