MS1076

MS1076 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 28 VOLTS GOLD METALLIZATION POUT = 220 W PEP GP = 12 dB GAIN MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This device utilizes an emitter ballasted die geometry for maximum ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 70 35 4.0 16 250 +200 - 65 to +150 Unit V V V A W °C °C Thermal Data RTH(J-C) Junction - Case Thermal Resistance 0.7 °C/W Rev A: October 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS1076 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol BVCES BVCEO BVEBO ICEO ICES HFE IC = 100 mA IC = 200 mA IE = 20 mA VCE = 30 V VCE = 35 V VCE = 5 V, Test Conditions Min. 70 35 4.0 ----15 Value Typ. ------------- Max. ------5 5 60 Unit V V V mA mA --- IC = 7 A DYNAMIC Symbol POUT GP ηC IMD COB Conditions f = 30 MHz f = 30 MHz f = 30 MHz f = 30 MHz f = 1 MHz f1 = 30.000 MHz Test Conditions Min. VCE = 28 V VCE = 28 V VCE = 28 V VCE = 28 V VCB = 28 V f2 = 30.001 MHz ICQ = 750 mA ICQ = 750 mA ICQ = 750 mA ICQ = 750 mA 220 12 40 ----- Value Typ. --------450 Max. -------30 --- Unit WPEP dB % dBc pf HFE BINNING (marked on lid with appropriate letter): A = 15-19 D = 27-32 G = 45-50 B = 19-22.5 E = 32-38 H = 50-55 C = 22.5-27 F = 38-45 I = 55-60 IMPEDANCE DATA FREQ 30 MHz ZIN 1.2 + j0.41 ZCL 1.25 + j1.92 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS1076 TYPICAL PERFORMANCE P out vs Pin 275 250 225 200 175 Pout(W) 150 125 100 75 50 25 0 0 1 2 3 4 5 6 7 8 Pin(W ) 9 10 11 12 13 14 15 16 Gain vs Pout 15.50 15.00 14.50 14.00 Gain(dB) 13.50 13.00 12.50 12.00 11.50 11.00 0 20 40 60 80 100 120 140 160 180 200 220 240 260 Pout(W ) Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS1076 TEST CIRCUIT Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS1076 BIAS CIRCUIT Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS1076 PACKAGE MECHANICAL DATA Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.